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Stephen Rockwell

In the United States, there are 140 individuals named Stephen Rockwell spread across 42 states, with the largest populations residing in California, Texas, Arizona. These Stephen Rockwell range in age from 38 to 73 years old. Some potential relatives include Rebeka Moore, Eric Smith, Tammy Smith. You can reach Stephen Rockwell through various email addresses, including csai***@yahoo.com, gymnast4l***@gmail.com, ske***@bigfoot.com. The associated phone number is 260-982-8117, along with 6 other potential numbers in the area codes corresponding to 706, 605, 478. For a comprehensive view, you can access contact details, phone numbers, addresses, emails, social media profiles, arrest records, photos, videos, public records, business records, resumes, CVs, work history, and related names to ensure you have all the information you need.

Public information about Stephen Rockwell

Resumes

Resumes

Owner Of Rockwell Engineering

Stephen Rockwell Photo 1
Position:
OWNER at Rockwell Engineering
Location:
San Francisco Bay Area
Industry:
Pharmaceuticals
Work:
Rockwell Engineering since 2008
OWNER

Owner At The Masters

Stephen Rockwell Photo 2
Position:
Owner at The Masters
Location:
United States
Industry:
Construction
Work:
The Masters since Mar 1985
Owner Wetern Skies Limo LLC - 9333 E University Dr. #152 Dec 2011 - Jul 2012
CEO
Education:
Hill Univesity
MBA, Business

Chief Technology Officer At National Aquarium

Stephen Rockwell Photo 3
Position:
Chief Technology Officer at National Aquarium in Baltimore
Location:
Washington D.C. Metro Area
Industry:
Nonprofit Organization Management
Work:
National Aquarium in Baltimore - Baltimore, MD and Washington DC since Jun 2011
Chief Technology Officer Civic Direct, Inc. - Boston, Panama City, Philadelphia Mar 2005 - Apr 2012
Principal and Founder Hope Street Group - Washington DC Apr 2010 - Jun 2011
Director of Technology Gateway Gulf - Manama, Bahrain Mar 2009 - Dec 2009
IT Director Institute for Progressive Christianity - Boston, MA May 2005 - Jul 2009
Board President and Co-Founder Management Consulting Services Jul 2006 - May 2009
Executive Director Executive Service Corps Jan 2005 - May 2006
Special Projects Manager United Way of Southeastern Pennsylvania Jan 2003 - Aug 2004
Director, Technology Outreach United Way of Southeastern Pennsylvania Sep 2000 - Dec 2002
Community Impact Officer National School and Community Corps Jul 1999 - Aug 2000
Americorps member and site manager
Education:
Harvard University Kennedy School of Government 2005 - 2007
Massachusetts Institute of Technology - Sloan School of Management 2004 - 2007
Cornell University 1995 - 1999
Cherokee 1991 - 1995
Skills:
Non-profits, Start-ups, Policy Analysis, Staff Development, Strategic Planning, Fundraising, Project Management, Program Management, Strategic Partnerships, Strategy, Public Speaking, Social Media, Grant Writing, Social Entrepreneurship, Management Consulting, Nonprofits
Languages:
Spanish

Stephen Rockwell - Phoenix, AZ

Stephen Rockwell Photo 4
Work:
U. S. MARINE CORP RESERVE 2010 to 2012
Lance Corporal, 2008 to 2014 MCDONALD'S - Jane, MO 2008 to 2009
Crew Member-Cook WALMART - Jane, MO 2006 to 2008
Customer Service
Education:
McDonald County High School - Jane, MO 2008
High School Diploma
Skills:
Truck driving for U.S.M.C, standard maintainece, supervisor experience

Stephen Rockwell - Township of Gloucester, NJ

Stephen Rockwell Photo 5
Work:
Sure-Flow Mechanical LLC Oct 2010 to 2000
Owner Sure-Flow Mechanical LLC Aug 2011 to Apr 2012
Plumbing Technician W.R. Bommer Plumbing & Heating - Laurel Springs, NJ Feb 1996 to Aug 2009
Supervisor Working Foreman Bittner Plumbing & Heating - Camden, NJ Jun 1993 to Feb 1996
Plumbing Mechanic Roto-Rooter Plumbing & Drain Cleaning - Pennsauken, NJ Mar 1989 to Jun 1993
Plumbing & Drain Cleaning Service Technician Anthony Plumbing - Washington Township, NJ Sep 1983 to Mar 1989
Plumbing & Drain Service Technician

Senior Marketing Director At Knoll, Inc

Stephen Rockwell Photo 6
Position:
Senior Marketing Director at Knoll, Inc
Location:
Greater Grand Rapids, Michigan Area
Industry:
Furniture
Work:
Knoll, Inc
Senior Marketing Director Knoll 1989 - 1993
Sales Representative
Education:
Miami University 1980 - 1984

Resident Artist/Actor At A Noise Within

Stephen Rockwell Photo 7
Position:
Teacher at AMDA-LA, Resident Artist/Actor at A Noise Within
Location:
Greater Los Angeles Area
Industry:
Performing Arts
Work:
AMDA-LA - Los Angeles, CA since 2004
Teacher A Noise Within - Pasadena, CA since 1996
Resident Artist/Actor
Education:
American Conservatory Theater 1984 - 1987
MFA, Acting Vassar College 1979 - 1984
BA, Drama
Skills:
Theatre, Acting, Teaching, Television, Dialects, Stage, Playwriting, Comedy, Drama, Shakespeare, Plays, Performing Arts, Musical Theatre, Stage Combat, Improvisation

Stephen Rockwell

Stephen Rockwell Photo 8
Location:
United States
Sponsored by TruthFinder

Business Records

Name / Title
Company / Classification
Phones & Addresses
Stephen J Rockwell
Manager
WESTERN SKIES LIMO LLC
2618 W Cactus Wren St, Apache Junction, AZ 85120
#700, Las Vegas, NV 89109
Stephen P Rockwell
Clerk
INSTITUTE FOR PROGRESSIVE CHRISTIANITY, INC
6 Beacon St SUITE 415, Boston, MA 02108
20 Armington St APT 11, Allston, MA 02134
Stephen Rockwell
Vice President Of Operations
Executive Service Corps Of New England Inc
Management Consulting Services
38 Chauncy St Ste 802, Boston, MA 02111
Stephen K Rockwell
SKR CONSULTING LLC
1057 W Park Ave, Gilbert, AZ 85233
Stephen Kent Rockwell
President
PRO GRASS WEST, INC
960 Penn Ave 8, Pittsburgh, PA 15222
960 Penn Ave, Pittsburgh, PA 15222
Stephen Rockwell
Administrator
Civic Direct
Title Abstract Offices
100 Fox Hill Dr, Marlton, NJ 08053
Stephen Rockwell
Executive Director
Management Consulting Svc
Business Consulting Services Management Consulting Services
14 Beacon St, Boston, MA 02108
Stephen Rockwell
President, Vice President
Rockwell Services, Inc
11587 SW Lemon Ave, Arcadia, FL 34269

Publications

Us Patents

Structure And Method For Optimizing Transmission Media Through Dielectric Layering And Doping In Semiconductor Structures And Devices Utilizing The Formation Of A Compliant Substrate

US Patent:
2003002, Jan 30, 2003
Filed:
Jul 25, 2001
Appl. No.:
09/911459
Inventors:
John Holmes - Scottsdale AZ, US
Bruce Bosco - Phoenix AZ, US
Rudy Emrick - Gilbert AZ, US
Steven Franson - Scottsdale AZ, US
Nestor Escalera - Gilbert AZ, US
Stephen Rockwell - Mesa AZ, US
Assignee:
MOTOROLA, INC. - Schaumburg IL
International Classification:
H01L031/0256
H01L029/47
US Classification:
257/076000, 257/073000
Abstract:
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A variety of transmission media are disclosed which capitalize on the materials and devices disclosed herein.

Semiconductor Structure For Isolating High Frequency Circuitry And Method For Fabricating

US Patent:
2003002, Jan 30, 2003
Filed:
Jul 25, 2001
Appl. No.:
09/911478
Inventors:
Stephen Rockwell - Mesa AZ, US
Steven Franson - Scottsdale AZ, US
John Holmes - Scottsdale AZ, US
Assignee:
MOTOROLA, INC. - Schaumburg IL
International Classification:
H01L031/0256
US Classification:
257/076000
Abstract:
A semiconductor structure for isolating high frequency circuitry includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, a plurality of high frequency circuits formed in and over the monocrystalline compound semiconductor material, and at least one embedded isolation wall lying within the compound semiconductor material to isolate the high frequency circuits.

Structure For Fabricating High Electron Mobility Transistors Utilizing The Formation Of Complaint Substrates

US Patent:
6646293, Nov 11, 2003
Filed:
Jul 18, 2001
Appl. No.:
09/906783
Inventors:
Rudy M. Emrick - Gilbert AZ
Stephen Kent Rockwell - Mesa AZ
John E. Holmes - Scottsdale AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 310328
US Classification:
257194, 257190
Abstract:
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Once such a structure is built, a high electron mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT) can be constructed on the structure. A HEMT or HBT of the above structure can then be used in a switch or in an amplifier.

Structure And Method For Fabricating Semiconductor Structures And Devices With Integrated Control Components

US Patent:
2003001, Jan 23, 2003
Filed:
Jul 17, 2001
Appl. No.:
09/905932
Inventors:
Rudy Emrick - Gilbert AZ, US
Nestor Escalera - Gilbert AZ, US
Bryan Farber - Chandler AZ, US
Stephen Rockwell - Mesa AZ, US
John Holmes - Scottsdale AZ, US
Bruce Bosco - Phoenix AZ, US
Steven Franson - Scottsdale AZ, US
Assignee:
MOTOROLA, INC. - Schaumburg IL
International Classification:
H01L029/00
US Classification:
257/528000, 257/499000
Abstract:
Controlling and controlled components are integrated on a monolithic device. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. By providing both compound and Group IV semiconductor materials in one integrated circuit, both control and controlled components are integrated on one device.

Structure And Method For Microelectromechanical System (Mems) Devices Integrated With Other Semiconductor Structures

US Patent:
2003001, Jan 23, 2003
Filed:
Jul 23, 2001
Appl. No.:
09/909936
Inventors:
Bruce Bosco - Phoenix AZ, US
Steven Franson - Scottsdale AZ, US
John Holmes - Scottsdale AZ, US
Nestor Escalera - Gilbert AZ, US
Rudy Emrick - Gilbert AZ, US
Stephen Rockwell - Mesa AZ, US
Assignee:
MOTOROLA, INC. - Schaumburg IL
International Classification:
H01L027/15
H01L031/12
H01L033/00
H01L029/00
H01L031/0328
US Classification:
257/528000, 257/190000
Abstract:
Microelectromechanical (MEMS) devices are integrated with high frequency devices on a monolithic substrate or wafer. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. MEMS devices, such as a switch, a variable capacitance device or a temperature control structure, are formed in the base monocrystalline substrate. High frequency devices, such as transistors or diodes, are formed in the overlaying layer of monocrystalline materials.

Structure And Method For Fabricating Configurable Transistor Devices Utilizing The Formation Of A Compliant Substrate For Materials Used To Form The Same

US Patent:
6855992, Feb 15, 2005
Filed:
Jul 24, 2001
Appl. No.:
09/910753
Inventors:
Rudy M. Emrick - Gilbert AZ, US
Bruce Allen Bosco - Phoenix AZ, US
John E. Holmes - Scottsdale AZ, US
Steven James Franson - Scottsdale AZ, US
Stephen Kent Rockwell - Mesa AZ, US
Assignee:
Motorola Inc. - Schaumburg IL
International Classification:
H01L031/119
US Classification:
257378, 257 78, 257 16, 257 43, 257 63, 257343, 438 46, 438234
Abstract:
A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

Structure And Method For Fabricating Semiconductor Structures, Devices, And Packaging Utilizing The Formation Of A Compliant Substrates For Materials Used To Form The Same

US Patent:
2003001, Jan 23, 2003
Filed:
Jul 17, 2001
Appl. No.:
09/906138
Inventors:
Rudy Emrick - Gilbert AZ, US
Bruce Bosco - Phoenix AZ, US
Stephen Rockwell - Mesa AZ, US
Nestor Escalera - Gilbert AZ, US
Assignee:
MOTOROLA, INC. - Schaumburg IL
International Classification:
H01L031/0256
US Classification:
257/076000
Abstract:
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A resulting semiconductor structure may then be flip-chip packaged with a suitable substrate.

Semiconductor Structure With Selective Doping And Process For Fabrication

US Patent:
2003001, Jan 16, 2003
Filed:
Jul 10, 2001
Appl. No.:
09/901110
Inventors:
John Holmes - Scottsdale AZ, US
Kurt Eisenbeiser - Tempe AZ, US
Rudy Emrick - Gilbert AZ, US
Steven Franson - Scottsdale AZ, US
Stephen Rockwell - Mesa AZ, US
Assignee:
MOTOROLA, INC. - Schaumburg IL
International Classification:
H01L021/31
H01L021/469
H01L021/20
H01L021/36
US Classification:
438/761000, 438/778000, 438/482000, 257/635000
Abstract:
A semiconductor structure with selective doping includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, at least one monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a transistor in the at least one monocrystalline compound semiconductor material and including active regions having different conductivity levels under substantially identical bias conditions.

FAQ: Learn more about Stephen Rockwell

What is Stephen Rockwell date of birth?

Stephen Rockwell was born on 1983.

What is Stephen Rockwell's email?

Stephen Rockwell has such email addresses: csai***@yahoo.com, gymnast4l***@gmail.com, ske***@bigfoot.com, steve***@hotmail.com, mayad***@gmail.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is Stephen Rockwell's telephone number?

Stephen Rockwell's known telephone numbers are: 260-982-8117, 706-554-3328, 605-220-0420, 478-955-1753, 903-638-6471, 781-962-9000. However, these numbers are subject to change and privacy restrictions.

How is Stephen Rockwell also known?

Stephen Rockwell is also known as: Steven Rockwell, Steve L Rockwell, Stephen L Brockwell. These names can be aliases, nicknames, or other names they have used.

Who is Stephen Rockwell related to?

Known relatives of Stephen Rockwell are: Frank Nofsinger, Jr Nofsinger, Kent Nofsinger, Ray Nofsinger, Adam Rockwell, Starla Rockwell, Courtney Rockwell-Gehrett. This information is based on available public records.

What are Stephen Rockwell's alternative names?

Known alternative names for Stephen Rockwell are: Frank Nofsinger, Jr Nofsinger, Kent Nofsinger, Ray Nofsinger, Adam Rockwell, Starla Rockwell, Courtney Rockwell-Gehrett. These can be aliases, maiden names, or nicknames.

What is Stephen Rockwell's current residential address?

Stephen Rockwell's current known residential address is: 708 W Kilpatrick St Apt A, Mineola, TX 75773. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Stephen Rockwell?

Previous addresses associated with Stephen Rockwell include: 100 Hillside Rd, Farmingdale, NY 11735; 1908 Bridge St, Gatesville, TX 76528; 4241 Hooker St, Denver, CO 80211; 9112 E Misty Dr, Claremore, OK 74019; 1690 Beach St Apt 301, San Francisco, CA 94123. Remember that this information might not be complete or up-to-date.

Where does Stephen Rockwell live?

Mineola, TX is the place where Stephen Rockwell currently lives.

How old is Stephen Rockwell?

Stephen Rockwell is 40 years old.

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