Russell Houghton

In the United States, there are 50 individuals named Russell Houghton spread across 32 states, with the largest populations residing in California, Michigan, Iowa.

Last updated Feb 18, 2024

Public information about Russell Houghton

Phones & Addresses

Name

Addresses

Phones

Russell J Houghton

2581 Old Harrisburg Rd, Gettysburg, PA 17325

717-338-1560

Russell J Houghton

310 Old Stage Rd, Essex Junction, VT 05452

802-879-7597

Russell Houghton

513 W Jackson Ave, Indianola, IA 50125

Russell M Houghton

1050 Griffith Way, Fresno, CA 93705

559-243-9554

Russell M Houghton

740 Olive Ave, Fresno, CA 93728

559-442-1036

Russell Houghton

314 4Th St, Hopeville, IA 50174

Russell M Houghton

824 Cotey St, Cadillac, MI 49601

231-775-8978

Russell R Houghton

1708 Harpswell Island Rd, South Harpswell, ME 04066

207-833-6695

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Publications

Us Patents

Method For Novel Soi Dram Bicmos Npn

US Patent:

6492211, Dec 10, 2002

Filed:

Sep 7, 2000

Appl. No.:

09/656819

Inventors:

Ramachandra Divakaruni - Somers NY
Russell J. Houghton - Essex Junction VT
Jack A. Mandelman - Stormville NY
W. David Pricer - Charlotte VT
William R. Tonti - Essex Junction VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

438155, 438234, 257349

Abstract:

There is disclosed herein a unique fabrication sequence and the structure of a vertical silicon on insulator (SOI) bipolar transistor integrated into a typical DRAM trench process sequence. A DRAM array utilizing an NFET allows for an integrated bipolar NPN sequence. Similarly, a vertical bipolar PNP device is implemented by changing the array transistor to a PFET. Particularly, a BICMOS device is fabricated in SOI. The bipolar emitter contacts and CMOS diffusion contacts are formed simultaneously of polysilicon plugs. The CMOS diffusion contact is the plug contact from bitline to storage node of a memory cell.

Low Input Impedance Line/Bus Receiver

US Patent:

6498518, Dec 24, 2002

Filed:

Jul 14, 2000

Appl. No.:

09/617680

Inventors:

Russell J. Houghton - Essex Junction VT
Jack A. Mandelman - Stormville NY
Azzouz Nezar - Shillington PA
Wilbur D. Pricer - Charlotte VT
William R. Tonti - Essex Junction VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H03K 522

US Classification:

327 72, 327 74, 327 68, 327 77

Abstract:

A current sensing circuit connected to a power supply terminal and having at least one input terminal and at least one output terminal includes at least one bipolar transistor having a base, emitter and collector, at least one current mirror amplifier connected to the power supply terminal, the current mirror amplifier having an input connected to the collector and having at least one output connected to the emitter, and a DC voltage source connected to the base.

Low-Power Dc Voltage Generator System

US Patent:

6337595, Jan 8, 2002

Filed:

Jul 28, 2000

Appl. No.:

09/627599

Inventors:

Louis L. Hsu - Fishkill NY
Rajiv V. Joshi - Yorktown Heights NY
Russell J. Houghton - Essex Junction VT
Wayne F. Ellis - Jericho VT
Jeffrey H. Dreibelbis - Williston VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G05F 302

US Classification:

327538, 327540, 327530, 323314

Abstract:

A low-voltage, low-power DC voltage generator system is provided having two negative voltage pump circuits for generating voltages for operating negative wordline and substrate bias charge pump circuits, a reference generator for generating a reference voltage, and a two-stage cascaded positive pump system having a first stage pump circuit and a second stage pump circuit. The first stage converts a supply voltage to a higher voltage level, e. g. , one volt to 1. 5 volts, to be used for I/O drivers, and the second stage converts the output voltage from the first stage to a higher voltage level, e. g. , from 1. 5 volts to about 2. 5 volts, for operating a boost wordline charge pump circuit. The DC voltage generator system further includes a micro pump circuit for providing a voltage level which is greater than one-volt to be used as reference voltages, even when an operating voltage of the DC voltage generator system is at or near one-volt. A one-volt negative voltage pump circuit is also included for pumping the voltages of at least one corresponding charge pump circuit, even when an operating voltage of the DC generator system is at or near one-volt. The DC voltage generator system is specifically designed to be implemented within battery-operated devices having at least one memory unit.

Low-Power Dc Voltage Generator System

US Patent:

6507237, Jan 14, 2003

Filed:

Jan 3, 2002

Appl. No.:

10/039874

Inventors:

Louis L. Hsu - Fishkill NY
Rajiv V. Joshi - Yorktown Heights NY
Russell J. Houghton - Essex Junction VT
Wayne F. Ellis - Jericho VT
Jeffrey H. Dreibelbis - Williston VT

Assignee:

IBM Corporation - Armonk NY

International Classification:

G05F 110

US Classification:

327538, 327536, 327537, 323313, 363 59

Abstract:

Sense Amplifier Threshold Compensation

US Patent:

6518827, Feb 11, 2003

Filed:

Jul 27, 2001

Appl. No.:

09/917059

Inventors:

John A. Fifield - Underhill VT
Robert H. Dennard - New Rochelle NY
Russell J. Houghton - Essex Junction VT
Toshiaki Kirihara - Poughkeepsie NY
Wing Luk - Chappaqua NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H03K 301

US Classification:

327534

Abstract:

A method and system are disclosed for adjusting the threshold in MOS devices, in particular for devices used in DRAM sense amplifiers. The effects of process and temperature variations on the threshold are compensated by a back-bias voltage. A comparison of an indicating voltage and a reference voltage is used to generate the back-bias voltage. The direction of back-bias voltage may be either in the backward, or in the forward bias direction.

Methods And Apparatus For Blowing And Sensing Antifuses

US Patent:

6346846, Feb 12, 2002

Filed:

Dec 17, 1999

Appl. No.:

09/466479

Inventors:

Claude L. Bertin - South Burlington VT
John A. Fifield - Underhill VT
Russell J. Houghton - Essex Junction VT
William R. Tonti - Essex Junction VT
Nicholas M. Van Heel - Burlington VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01H 3776

US Classification:

327525

Abstract:

Methods and apparatus for blowing and sensing antifuses are provided. Specifically, in a first aspect, a method is provided for changing the state of one of a plurality of antifuses by selecting one of the bank of antifuses and applying a high voltage to change the state of the selected antifuse. In second and third aspects, apparatus are provided for performing the method of the first aspect. In a fourth aspect, a method is provided for boosting a voltage that includes the steps of generating a first voltage within a first stage storage mechanism of a first stage voltage booster circuit, generating a second voltage equaling about twice the first voltage within a first and a second, second stage storage mechanism of a second stage voltage booster circuit, and generating about thrice the first voltage based on the second voltage of the second stage voltage booster circuit. In a fifth aspect, apparatus are provided for performing the method of the fourth aspect.

Low-Power Band-Gap Reference And Temperature Sensor Circuit

US Patent:

6531911, Mar 11, 2003

Filed:

Jul 7, 2000

Appl. No.:

09/611519

Inventors:

Louis L. Hsu - Fishkill NY
Rajiv V. Joshi - Yorktown Heights NY
Russell J. Houghton - Essex Junction VT

Assignee:

IBM Corporation - Armonk NY

International Classification:

H01L 3500

US Classification:

327512, 327539

Abstract:

A combined low-voltage, low-power band-gap reference and temperature sensor circuit is provided for providing a band-gap reference parameter and for sensing the temperature of a chip, such as an eDRAM memory unit or CPU chip, using the band-gap reference parameter. The combined sensor circuit is insensitive to supply voltage and a variation in the chip temperature. The power consumption of both circuits, i. e. , the band-gap reference and the temperature sensor circuits, encompassing the combined sensor circuit is less than one W. The combined sensor circuit can be used to monitor local or global chip temperature. The result can be used to (1) regulate DRAM array refresh cycle time, e. g. , the higher the temperature, the shorter the refresh cycle time, (2) to activate an on-chip or off-chip cooling or heating device to regulate the chip temperature, (3) to adjust internally generated voltage level, and (4) to adjust the CPU (or microprocessor) clock rate, i. e. , frequency, so that the chip will not overheat. The combined band-gap reference and temperature sensor circuit of the present invention can be implemented within battery-operated devices having at least one memory unit.

Method To Improve Charge Pump Reliability, Efficiency And Size

US Patent:

6570434, May 27, 2003

Filed:

Sep 15, 2000

Appl. No.:

09/662685

Inventors:

Louis Hsu - Fishkill NY
Russell J. Houghton - Essex Junction VT
Oliver Weinfurtner - Gilching, DE

Assignee:

Infineon Technologies AG - Munich
International Business Machines Corporation - Armonk NY

International Classification:

G05F 302

US Classification:

327536

Abstract:

A dynamic clamp is used in conjunction with capacitors with thinner dielectric or with deep trench capacitors to solve the problem of dielectric breakdown in high stress capacitors. The dynamic clamp is realized using a two stage pump operation cycle such that, during a first stage pump cycle, a middle node of a pair of series connected capacitors is pre-charged to a supply voltage and, during a second stage pump cycle, the middle node is coupled by a boost clock. Thus, at any moment in the pump operation cycle, the voltage across the capacitors is held within a safety range.

Videos & Images

Youtube

Haunted Houghton House

Duration:

9m 12s

Category:

Travel & Events

Description:

Following our same day visit to the De Grey Mausoleum, we travelled a further few more miles to visit and investigate briefly the ruins of Houghton Hall. For although we were only onsite a short period as the site shuts at dusk, we managed to capture some interesting EVPs. The house was built in ap...

Killers European Premiere Chantelle Houghton Interview

Duration:

3m 12s

Category:

Travel & Events

Description:

Killers European Premiere Chantelle Houghton Interview - Celebrity Big Brother winner Chantelle Houghton talks to us about going brunette, her animal rights work with PETA and her views on Ashton Kutcher and dating. Presented by Dene Ching Camera and Post by Russell Nelson

Dylan Rieder Bonus Footage

Duration:

1m 11s

Category:

Sports

Description:

Multiple covers, a gnarly video part and a kick ass interview in the new Skateboarder can't slow Dylan down. Check this video by Russell Houghton of what Dylan does when he's not shredding the streets: annihilation of his private skatepark. Wow!

Baseball

Duration:

4m 49s

Category:

Entertainment

Description:

Falsettos Act 2 "we're sitting and watching jason play baseball...." "Lucy Carney" "Ron Carnavil" "Brad Howell Houghton" "Ian Russell" "Hilda Philips" "Christine Robison" "John McColms"

Tommy Durden Heartbreak Hotel

Duration:

Category:

Entertainment

Description:

Michigan Magazine visits with Tommy Durden of Houghton Lake Co-author of Elvis Presleys first gold record HEART BREAK HOTEL. Barry Stutesman and Dell Vaughan visited Tommy and wife Babe at thier Houghton Lake home back in 1991 where Tommy describes what led to getting the ear of Col Tom Parker and E...

Dave Houghton Interviewed By Russell Nelson At Bafta Craft Awards 09.

Duration:

3m 23s

Category:

Travel & Events

Description:

Dave Houghton interviewed by Russell Nelson at BAFTA Craft Awards 09. Ian did camera. Chris did post.

Gmtv - Chantelle Houghton (23.11.07)

Duration:

3m 14s

Category:

News & Politics

Description:

Celebrity Big Brother winner Chantelle Houghton appeared on GMTV to talk about her life now that she's split from Ordinary Boys frontman Preston. This interview was made before she had those ridiculous breast implants. Before she had them done, she looked rather hot. Now she doesn't.

Urban Isolation

Duration:

3m 42s

Channel:

Russell Houghten

Description:

REDirect is a celebration of skateboard filmmaking between and Prints are available for...

FAQ: Learn more about Russell Houghton

How old is Russell Houghton?

Russell Houghton is 63 years old.

What is Russell Houghton date of birth?

Russell Houghton was born on 1960.

What is Russell Houghton's email?

Russell Houghton has such email addresses: ghough***@att.net, rhough***@excite.com, brandonhough***@worldnet.att.net, russell.hough***@gmail.com, iam_all4u***@hotmail.com, flowereli2***@yahoo.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is Russell Houghton's telephone number?

Russell Houghton's known telephone numbers are: 541-788-2394, 515-371-1386, 830-998-7593, 860-651-0449, 515-961-7890, 515-962-0019. However, these numbers are subject to change and privacy restrictions.

Who is Russell Houghton related to?

Known relatives of Russell Houghton are: Elisha Swainston, Amy Morris, Candice Edwards, Jordan Houghton, Russell Houghton, Veronica Houghton, Jenny Dinehart. This information is based on available public records.

What are Russell Houghton's alternative names?

Known alternative names for Russell Houghton are: Elisha Swainston, Amy Morris, Candice Edwards, Jordan Houghton, Russell Houghton, Veronica Houghton, Jenny Dinehart. These can be aliases, maiden names, or nicknames.

What is Russell Houghton's current residential address?

Russell Houghton's current known residential address is: 205 S Lincoln St Apt C, Stanton, MI 48888. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Russell Houghton?

Previous addresses associated with Russell Houghton include: 940 Monroe Rd, Littleton, NH 03561; 61167 Dayspring Dr, Bend, OR 97702; 1800 S E Dr, Indianola, IA 50125; 314 4Th St, Murray, IA 50174; 35140 167Th St, Faulkton, SD 57438. Remember that this information might not be complete or up-to-date.

Where does Russell Houghton live?

Stanton, MI is the place where Russell Houghton currently lives.

How old is Russell Houghton?

Russell Houghton is 63 years old.

Possible Relatives

Cynthia Houghton David Houghton Dawn Houghton Dean Houghton Deanna Houghton Dale Houghton Debbie Houghton Russell Johnston Russell Standridge Russell Stanfield