Roderick Davies

In the United States, there are 46 individuals named Roderick Davies spread across 20 states, with the largest populations residing in Florida, Utah, Arizona.

Public information about Roderick Davies

Resumes

Roderick Davies

Location:

Provo, Utah Area

Industry:

Consumer Goods

Roderick D Davies - Pleasant Grove, UT

Work:

EasternPro (HK) Limited Jan 2007 to 2000
Director of Operations Romney for President campaign - Boston, MA Jan 2006 to Mar 2008
National Finance The Lifelike Company - Denver, CO Dec 1999 to Nov 2006
Vice President

Education:

University of Michigan - Ann Arbor, MI 1967 to 1970
4 years toward BS Mechanical Engineering degree, Univ. of Michigan and BYU in Mechanical engineering, business management

Student At Full Time Student (Pre-Dental)

Location:

Phoenix, Arizona Area

Industry:

Financial Services

Dental Student

Location:

Oklahoma City, OK

Industry:

Higher Education

Work:

University of Oklahoma Health Sciences Center since May 2011
Dental Student The Vanguard Group Jan 2007 - Jan 2009
Investment Specialist Jatek International Dec 2005 - Mar 2007
Project Manager HealthEquity Apr 2004 - Dec 2005
Director of Corporate Development

Education:

Arizona State University
B.S., Economics

Skills:

Health Sciences

Dentist

Work:

Burns Dentistry
Dentist

Phones & Addresses

Name

Addresses

Phones

Roderick D Davies

364 500, Provo, UT 84606

801-818-0876

Roderick D Davies

4334 Beechwood Rd, Salt Lake City, UT 84123

801-268-0955

Roderick D Davies

9383 Avanyu Dr, Pleasant Grove, UT 84062

801-796-9799

Roderick H Davies

9600 96Th St, Scottsdale, AZ 85258

480-767-7657

Roderick W Davies

364 Kimbary Dr, Dayton, OH 45458

937-885-5193

Roderick C Davies

6453 Big Pine Way, Las Vegas, NV 89108

702-474-0623

Roderick Davies

1038 400, Orem, UT 84057

801-226-4704

Roderick D Davies

9383 Avanyu Ct, Pleasant Grove, UT 84062

801-796-9799

Business Records

Name / Title

Company / Classification

Phones & Addresses

Roderick D. Davies
President, Director

Architectural Specialty Products, Inc

327 SE Cardinal Way, Stuart, FL 34996

Roderick D Davies
President, Treasurer, Director

LORANDA, INC

327 Cardinal Way, Stuart, FL 34996

Roderick D Davies
Director

CLINICAL INNOVATIONS CORPORATION

409 SE Osceola Ave STE D, Stuart, FL 34995
409 SE Osceola St, Stuart, FL 34994
327 Cardinal Way, Stuart, FL 34996

Roderick D. Davies

Asian Sources, LLC
Business Services at Non-Commercial Site

9383 Avanyu Dr, Pleasant Grove, UT 84062

Roderick D. Davies
Vice President

Tri-Cor Products, Inc

3008 SE Waaler St, Stuart, FL 34997

Roderick D. Davies
Director

Marathon Technologies International, Inc

409 SE Osceola St, Stuart, FL 34994

Publications

Us Patents

Silicide Contacts For Cmos Devices

US Patent:

4476482, Oct 9, 1984

Filed:

May 13, 1982

Appl. No.:

6/377759

Inventors:

David B. Scott - Plano TX
Roderick D. Davies - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2348
H01L 2904
H01L 2946
H01L 2978

US Classification:

357 71

Abstract:

In the manufacture of a CMOS device, oxide is etched away from polysilicon gate-level interconnects, and from source or drain regions of either conductivity type to which the polysilicon gate-level interconnect is desired to be connected. A metal is then deposited, and silicide is formed to connect the gate-level interconnect to the respective source and drain regions. To ensure continuity of the silicide connection, the gate oxide beneath the gate level interconnect is slightly undercut by a wet etching process, additional polysilicon is deposited conformally overall, and the additional polysilicon is anisotropically etched so that it is removed from all areas except those within the undercut region beneath the gate-level interconnect thus a continuous surface of silicon, from which a continuous layer of silicide is then grown, exists between the polysilicon gate-level interconnect and the respective source and drain regions. Thus, self-aligned contacts are created, and no unwanted pn junctions are created.

Vertical-Etch Direct Moat Isolation Process

US Patent:

4418094, Nov 29, 1983

Filed:

Mar 2, 1982

Appl. No.:

6/353994

Inventors:

Roderick D. Davies - Richardson TX
Dennis C. Hartman - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2700

US Classification:

427 38

Abstract:

Direct Moat Isolation for VLSI integrated circuit structures is formed by growing oxide over the entire substrate area, and then cutting windows in the oxide, using an anisotropic polymer-free oxide etch, where moat regions are to be formed. To prevent polysilicon filamentation, gate patterning is performed with an extremely selective polysilicon etch. The combination of these processing steps permits a direct moat isolation device fabrication process which is insensitive to the oxide sidewall angle, increasing yield and permitting extremely compact isolation structures to be formed.

Cmos Source/Drain Implant Process Without Compensation Of Polysilicon Doping

US Patent:

4420344, Dec 13, 1983

Filed:

Oct 15, 1981

Appl. No.:

6/311713

Inventors:

Roderick D. Davies - Richardson TX
David B. Scott - Plano TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21263
H01L 2126

US Classification:

148 15

Abstract:

CMOS source/drain regions of both conductivity types are formed using only a single masking step. One dopant is applied to both types of source/drain regions, and a second dopant is applied at a much higher dose and energy to only one type of source/drain region. Preferably, boron and arsenic are used as the dopants in silicon, since the cooperative diffusion effect causes the boron in the counterdoped source/drain regions to be entirely contained within the arsenic diffusion. To avoid the erratic etching characteristics of heavily-doped polysilicon under chloro-etch, the patterned photoresist used to pattern the gates and gate-level interconnects is left in place during the P+ source/drain implant. Thus, moderately doped N-type polysilicon may be used, since it is not exposed to compensation by the P+ implant. Since no P+ source/drain mask is required, no double-level photoresist structure is created, and there is consequently no obstacle to reworks.

Mask-Saving Technique For Forming Cmos Source/Drain Regions

US Patent:

4406710, Sep 27, 1983

Filed:

Oct 15, 1981

Appl. No.:

6/311684

Inventors:

Roderick D. Davies - Richardson TX
David B. Scott - Plano TX

International Classification:

H01L 21265
B01J 1700

US Classification:

148 15

Abstract:

Method Of Manufacturing Silicide Contacts For Cmos Devices

US Patent:

4374700, Feb 22, 1983

Filed:

May 29, 1981

Appl. No.:

6/268201

Inventors:

David B. Scott - Plano TX
Roderick D. Davies - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21308
H01L 2124
H01L 21283

US Classification:

156656

Abstract:

In the manufacture of a CMOS device, oxide is etched away from polysilicon gate-level interconnects, and from source or drain regions of either conductivity type to which the polysilicon gate-level interconnect is desired to be connected. A metal is then deposited, and silicide is formed to connect the gate-level interconnect to the respective source and drain regions. To ensure continuity of the silicide connection, the gate oxide beneath the gate level interconnect is slightly undercut by a wet etching process, additional polysilicon is deposited conformally overall, and the additional polysilicon is anistropically etched so that it is removed from all areas except those within the undercut region beneath the gate-level interconnect thus a continuous surface of silicon, from which a continuous layer of silicide is then grown, exists between the polysilicon gate-level interconnect and the respective source and drain regions. Thus, self-aligned contacts are created, and no unwanted pn junctions are created.

Videos & Images

Where does Roderick Davies live?

Las Vegas, NV is the place where Roderick Davies currently lives.

How old is Roderick Davies?

Roderick Davies is 54 years old.

What is Roderick Davies date of birth?

Roderick Davies was born on 1969.

What is Roderick Davies's email?

Roderick Davies has such email addresses: lori***@earthlink.net, blkpan***@cox.net, roderickhbdav***@yahoo.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is Roderick Davies's telephone number?

Roderick Davies's known telephone numbers are: 319-895-8973, 801-796-9799, 702-474-0623, 801-226-4704, 650-917-9306, 801-818-0876. However, these numbers are subject to change and privacy restrictions.

How is Roderick Davies also known?

Roderick Davies is also known as: Raymond Davies, Roderick Dazies, Roderick C Davis. These names can be aliases, nicknames, or other names they have used.

Who is Roderick Davies related to?

Known relatives of Roderick Davies are: Robert Miller, Debbie Davis, Norma Davis, Frederick Davies, Kevin Davies, Tynisha Davies, Debra Darus. This information is based on available public records.

Name Variants	Roderic Davies
Ages	42 to 89
Phones	319-895-8973	801-796-9799	702-474-0623
Addresses	2920 Bayliner Ave, N Las Vegas, NV 89031	4031 Rousseau Ln, Pls Vrds Pnsl, CA 90274	3011 F Dr, Amana, IA 52203
Business records	Dental Student / University of Oklahoma Health Sciences Center	Dentist / Burns Dentistry	Director / Marathon Technologies International, Inc

Roderick Davies

What do we know about Roderick Davies

Public information about Roderick Davies

Resumes

Resumes

Roderick Davies

Roderick D Davies - Pleasant Grove, UT

Student At Full Time Student (Pre-Dental)

Dental Student

Dentist

Phones & Addresses

Business Records

Publications

Us Patents

Silicide Contacts For Cmos Devices

Vertical-Etch Direct Moat Isolation Process

Cmos Source/Drain Implant Process Without Compensation Of Polysilicon Doping

Mask-Saving Technique For Forming Cmos Source/Drain Regions

Method Of Manufacturing Silicide Contacts For Cmos Devices

Estudiantes Debaten Nueva Ley De Universidades (3 De 6)

Estudiantes Debaten Nueva Ley De Universidades (2 De 6)

Homenaje A Las Divas Del Softcore - Tribute To The Divas Of Sotfcore.avi

Deborah Coleman & Band - Natu Nobilis Blues Festival - Porto Alegre - 2004

Author Of The $1000 Genome, Kevin Davies, Brings Genes To Life As Part Of Davis Lecture

Edward Elgar : The Kingdom "The Sigh Of Healing - The Arrest"

Estudiantes Debaten Nueva Ley De Universidades (4 De 6)

Estudiantes Debaten Nueva Ley De Universidades (6 De 6)

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