Philip Pitcher

In the United States, there are 16 individuals named Philip Pitcher spread across 15 states, with the largest populations residing in New York, Florida, Indiana.

Last updated Feb 22, 2024

Public information about Philip Pitcher

Phones & Addresses

Name

Addresses

Phones

Philip W Pitcher

3711 Queen St N, Saint Petersburg, FL 33713

727-526-5233

Philip W Pitcher

484 Santa Cruz Pl NE, Saint Petersburg, FL 33703

727-525-8379

Philip Pitcher

2901 16Th St, Indianapolis, IN 46222

Philip Pitcher

116 Ridgemont Ct, Cranberry Township, PA 16066

Philip Pitcher

288 2Nd St, Troy, NY 12180

518-271-2096

Philip Pitcher

3209 Main St, Horseheads, NY 14845

607-739-1406

Philip R Pitcher

117 Main St, Lake Placid, NY 12946

518-523-3763

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Publications

Us Patents

Programmable Resistive Memory Cell With Oxide Layer

US Patent:

8288753, Oct 16, 2012

Filed:

Oct 21, 2011

Appl. No.:

13/278245

Inventors:

Ming Sun - Eden Prairie MN, US
Michael Xuefei Tang - Bloomington MN, US
Insik Jin - Eagan MN, US
Venkatram Venkatasamy - Edina MN, US
Philip George Pitcher - Shakopee MN, US
Nurul Amin - Woodbury MN, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

H01L 47/02

US Classification:

257 5, 257 3, 257 40

Abstract:

Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

Method Of Forming A Programmable Metallization Memory Cell

US Patent:

8343801, Jan 1, 2013

Filed:

Oct 21, 2011

Appl. No.:

13/278240

Inventors:

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

H01L 21/00
H01L 21/16

US Classification:

438104, 438 99, 257 43

Abstract:

Sputtering Target Assembly

US Patent:

6402912, Jun 11, 2002

Filed:

Nov 9, 2000

Appl. No.:

09/708738

Inventors:

Manuel J. Herrera - Cupertino CA
Philip G. Pitcher - Spokane WA

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

C23C 1434

US Classification:

20429812, 20429819

Abstract:

A sputtering target assembly for a sputtering apparatus including a sputtering process chamber, the sputtering target assembly, and an adjustable magnetron assembly. The target assembly includes heating/cooling passages within the target assembly. A first side of a heat exchanger/pressure relieving plate is attached to a target backing. A second or opposing side of the relieving plate is attached to an insulation cover to form, within the target assembly, pressure relieving vacuum passages. The target assembly completely covers and seals against a high-vacuum-compatible insulator resting over and sealed to a top flange of the process chamber. A magnetron assembly resting over the target assembly, is independent from vacuum, or vacuum components, and provides means to move or scan a magnetron or magnet array over the target assembly. The distance between the magnetron and target assembly is adjustable throughout the useful life of the target independent from vacuum, or vacuum components.

Methods Of Forming Layers

US Patent:

2013020, Aug 8, 2013

Filed:

Feb 1, 2013

Appl. No.:

13/756669

Inventors:

SEAGATE TECHNOLOGY LLC - Cupertino CA, US
Philip George Pitcher - Shakopee MN, US

Assignee:

SEAGATE TECHNOLOGY LLC - Cupertino CA

International Classification:

H01J 37/317

US Classification:

2504923

Abstract:

A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including moderately charged ions (MCIs), substantially all the MCIs independently have charges from 2 to 6 and kinetic energies of not greater than about 200 eV, wherein the MCIs do not penetrate more than about 30 Å into the surface of the substrate to form a layer on the substrate.

Platinum And Cobalt Multilayer Recording Materials System And Process For Making Same

US Patent:

6022630, Feb 8, 2000

Filed:

Sep 30, 1997

Appl. No.:

8/941311

Inventors:

Joseph Miller - Glasgow, GB
Derek P A Pearson - Reading, GB
Philip G. Pitcher - Spokane WA

Assignee:

Johnson Matthey Electronics, Inc. - Spokane WA

International Classification:

G11B 566

US Classification:

428611

Abstract:

A materials system in which exchange coupling is achievable has the potential for allowing direct overwriting of data and comprises at least two multilayer films of platinum and cobalt with independently controlled coercivity and Curie temperatures.

Magnetron Sputtering Apparatus With An Integral Cooling And Pressure Relieving Cathode

US Patent:

6494999, Dec 17, 2002

Filed:

Nov 9, 2000

Appl. No.:

09/708735

Inventors:

Manuel J. Herrera - Cupertino CA
Philip G. Pitcher - Spokane WA

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

C23C 1435

US Classification:

20419212, 20429809, 20429812, 20429817, 2042982

Abstract:

A sputtering apparatus includes a sputtering process chamber, a sputtering target assembly, and an adjustable magnetron assembly. The sputtering target assembly includes heating/cooling passages within the sputtering target assembly. A first side of a heat exchanger/pressure relieving plate is attached to a target backing. A second or opposing side of the heat exchanger/pressure relieving plate is attached to an insulation cover to form, within the sputtering target assembly, pressure relieving vacuum passages. The target assembly completely covers and seals against a high-vacuum-compatible insulator resting over and sealed to a top flange of the process chamber. A magnetron assembly resting over the target assembly, is independent from vacuum, or vacuum components, and provides means to move or scan a magnetron or magnet array over the target assembly. The distance between the magnetron and target assembly is adjustable throughout the useful life of the target independent from vacuum, or vacuum components.

Methods Of Forming Portions Of Near Field Transducers (Nfts) And Articles Formed Thereby

US Patent:

2015031, Nov 5, 2015

Filed:

May 1, 2014

Appl. No.:

14/266920

Inventors:

- Cupertino CA, US
Sami Antrazi - Eden Prairie MN, US
Michael Seigler - Eden Prairie MN, US
Scott Franzen - Savage MN, US
Philip G. Pitcher - Shakopee MN, US
Edward F. Rejda - Bloomington MN, US
Kurt W. Wierman - Eden Prairie MN, US

Assignee:

SEAGATE TECHNOLOGY LLC - Cupertino CA

International Classification:

G11B 5/31

Abstract:

Methods that include forming at least a portion of a near field transducer (NFT) structure; depositing a material onto at least one surface of the portion of the NFT to form a metal containing layer; and subjecting the metal containing layer to conditions that cause diffusion of at least a portion of the material into the at least one surface of the portion of the NFT; and devices formed thereby.

Methods Of Forming Layers

US Patent:

2015034, Dec 3, 2015

Filed:

Aug 10, 2015

Appl. No.:

14/822452

Inventors:

- Cupertino CA, US
Philip George Pitcher - Shakopee MN, US

International Classification:

H01J 37/317

Abstract:

A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; providing a precursor ion beam, the precursor ion beam including ions; neutralizing at least a portion of the ions of the precursor ion beam to form a neutral particle beam, the neutral particle beam including neutral particles; and directing the neutral particle beam towards the surface of the substrate, wherein both the ions and the neutral particles have implant energies of not greater than 100 eV, and the neutral particles of the particle beam form a layer on the substrate.

Videos & Images

What are Philip Pitcher's alternative names?

Known alternative names for Philip Pitcher are: Pamela Pitcher, Susan Pitcher, Albert Pitcher, Brandy Pitcher, Christopher Pitcher, Angela Dempsey, Aaron Gehrich. These can be aliases, maiden names, or nicknames.

What is Philip Pitcher's current residential address?

Philip Pitcher's current known residential address is: 1715 Georgia Ave Ne, Saint Petersburg, FL 33703. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Philip Pitcher?

Previous addresses associated with Philip Pitcher include: 16263 Stemmer Ridge Rd Nw, Shakopee, MN 55379; 1650 30Th Ave N, Saint Petersburg, FL 33713; 2901 16Th St, Indianapolis, IN 46222; 1208 6Th Ave, Watervliet, NY 12189; 12 Mechanic St, Troy, NY 12180. Remember that this information might not be complete or up-to-date.

Where does Philip Pitcher live?

Saint Petersburg, FL is the place where Philip Pitcher currently lives.

How old is Philip Pitcher?

Philip Pitcher is 48 years old.

What is Philip Pitcher date of birth?

Philip Pitcher was born on 1975.

What is Philip Pitcher's email?

Philip Pitcher has email address: philippitc***@go.com. Note that the accuracy of this email may vary and this is subject to privacy laws and restrictions.

Possible Relatives

Cynthia Pitcher David Pitcher Dean Pitcher Dale Pitcher Debbie Pitcher Deborah Pitcher Dan Pitcher Philip Johnston Philip Stanford Philip Joiner

Name Variants	Phillip Pitcher	Phil Pitcher	Pip Pitcher
Ages	36 to 81
Phones	607-594-2670	952-426-9924	518-272-2117
Addresses	105 Texas Hollow Rd, Odessa, NY 14869	16263 Stemmer Ridge Rd Nw, Shakopee, MN 55379	1650 30Th Ave N, Saint Petersburg, FL 33713
Business records	Principal Scientist / Seagate Technology

Philip Pitcher

What do we know about Philip Pitcher

Public information about Philip Pitcher

Phones & Addresses

Publications

Us Patents

Programmable Resistive Memory Cell With Oxide Layer

Method Of Forming A Programmable Metallization Memory Cell

Sputtering Target Assembly

Methods Of Forming Layers

Platinum And Cobalt Multilayer Recording Materials System And Process For Making Same

Magnetron Sputtering Apparatus With An Integral Cooling And Pressure Relieving Cathode

Methods Of Forming Portions Of Near Field Transducers (Nfts) And Articles Formed Thereby

Methods Of Forming Layers

FAQ: Learn more about Philip Pitcher

Possible Relatives