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James Nulty

In the United States, there are 392 individuals named James Nulty spread across 50 states, with the largest populations residing in Florida, California, New York. These James Nulty range in age from 45 to 83 years old. Some potential relatives include Tara Mcnulty, Katherine Nulty, James Nulty. You can reach James Nulty through various email addresses, including desireenu***@yahoo.com, cnu***@angelfire.com, lnu***@msn.com. The associated phone number is 215-355-5413, along with 6 other potential numbers in the area codes corresponding to 609, 732, 916. For a comprehensive view, you can access contact details, phone numbers, addresses, emails, social media profiles, arrest records, photos, videos, public records, business records, resumes, CVs, work history, and related names to ensure you have all the information you need.

Public information about James Nulty

Resumes

Resumes

Owner

James Nulty Photo 1
Location:
Scranton, PA
Industry:
Public Relations And Communications
Work:
Volpe on Fox56 Feb 2014 - Jun 2014
Co Host Sunday Live With Jim Mc Nulty Jan 1992 - Jan 2006
Tv Host National Conference of Democratic Mayors Jan 1986 - Feb 1987
Executive Director City of Scranton Pa Jan 1982 - Jan 1986
Mayor Jamesbmcnultyagency Jan 1982 - Jan 1986
Owner
Education:
University of Scranton 1962 - 1966
Bachelors, Political Science and Government, Political Science, Government
Skills:
Social Media, Media Relations, Corporate Communications, Marketing Communications, Public Relations, Public Speaking, Strategic Communications, Nonprofits, Copywriting, Press Releases, Social Networking

James Nulty

James Nulty Photo 2
Location:
Whitestone, NY
Industry:
Construction

Assistant Store Manager

James Nulty Photo 3
Location:
3890 Maplewood Dr, Seaford, NY 11783
Industry:
Luxury Goods & Jewelry
Work:
Fendi
Assistant Store Manager Emporio Armani
Sales Manager Gap
Assistant Store Manager Moncler Feb 2017 - Jun 2018
Operations Manager Kenneth Cole Productions Aug 2015 - Feb 2017
Operations Manager and Assistant Store Manager Tory Burch Sep 2014 - Aug 2015
Sales Associate Kenneth Cole Productions Jan 2011 - Aug 2014
Sales Associate
Education:
John Jay College (Cuny) 2011 - 2013
Bachelors, Bachelor of Science, Criminal Justice Nassau Community College 2009 - 2011
Seaford Senior High School 2009
Skills:
Retail, Fashion, Apparel, Merchandising, Inventory Management, Customer Service, Microsoft Word, Powerpoint, Event Planning, Marketing, Microsoft Office, Sales, Driving Results, New Store Openings, Coaching, Inventory Control, Leadership, Point of Sale Systems, Microsoft Powerpoint, Retail Sales, Loss Prevention, Multi Store Operations, Luxury Goods, Visual Merchandising, Hands on Training, Pos, Customer Relationship Management, Recruiting, Brand Loyalty, Onboarding, Cash Handling, Product Knowledge, Team Training
Languages:
English

James Nulty

James Nulty Photo 4
Location:
United States

James Nulty - Oceanport, NJ

James Nulty Photo 5
Work:
Bank of America Apr 2011 to 2000
Merrill Lynch Consultant IBM Mar 2003 to Apr 2011
Consultant Merrill Lynch Aug 1999 to Apr 2002
Consultant IBM 1996 to 1999
Consultant
Education:
Brookdale Community College 1985
Associates in Electrical Engineering

Engineer

James Nulty Photo 6
Location:
3212 Atmore Rd, Philadelphia, PA 19154
Industry:
Hospitality
Work:
The Westin Savannah Harbor Golf Resort & Spa
Engineer Izes Consulting Solutions Nov 1, 2014 - Dec 2016
Consultant Voicemine Technologies Jan 2011 - Oct 2014
Operations Manager
Education:
Wilkes University 1986 - 1987
Council Rock High School North 1982 - 1986
Mercer County Community College
Associates, Associate of Arts
Skills:
Strategic Planning, Customer Service, Leadership, Team Building, Project Management, Management, Program Management, Strategy, Sales, Sales Management, Healthcare, Data Entry, Telecommunications, Business Development, Contract Negotiation, Call Center Architecture, Unified Communications, Budgets, Crm, Home Care, Hospitals, Patient Safety, Medical Terminology
Interests:
Children
Economic Empowerment
Education
Environment
Science and Technology
Disaster and Humanitarian Relief
Animal Welfare
Arts and Culture
Health

James Nulty

James Nulty Photo 7
Location:
Jamestown, NC
Education:
Guilford College 2009 - 2011

James Nulty

James Nulty Photo 8
Location:
Philadelphia, PA
Industry:
Education Management
Skills:
Fundraising, Public Speaking, Non Profits, Volunteer Management, Grants, Community Outreach, Program Development, Philanthropy, Nonprofits, Grant Writing, Strategic Planning
Background search with BeenVerified
Data provided by Veripages

Phones & Addresses

Name
Addresses
Phones
James M Nulty
718-392-4435, 631-871-3774
James M Nulty
718-505-4371
James Mc Nulty
215-355-5413
James M Nulty
718-392-4435
James Mc Nulty
609-823-3919
James M Nulty
631-226-4155
James P Nulty
501-219-4540

Business Records

Name / Title
Company / Classification
Phones & Addresses
James M. Nulty
Principal
Bryan James Design
Business Services
411 Robinson Rd, Sebastopol, CA 95472
James Nulty
Manager
Premier Auto and Wholesale
Automobiles and Other Motor Vehicles
12227 Mac Arthur Dr, North Little Rock, AR 72118
501-851-7844
James Nulty
Manager
Premier Auto and Wholesale
Automobiles and Other Motor Vehicles
12227 Mac Arthur Dr, North Little Rock, AR 72118
James Nulty
Executive Director
Vsa Arts Of Indiana
Other Social Advocacy Organizations
1505 N Delaware St, Indianapolis, IN 46202
317-974-4123, 317-974-4124
James Nulty
Branch Manager
Parsons Corporation
Engineering Services
1136 Cherry Laurel St, Tallahassee, FL 32308
850-222-3888
James Nulty
Executive Director
Vsa Arts
Social Services
1505 N Delaware St, Indianapolis, IN 46202
Website: vsai.org
James P Nulty
ARKANSAS SEPTIC ENTERPRISES INC
4123 Sooner Ln, Little Rock, AR 72206
James Phillip Nulty
AMERICA'S 1 SEPTIC TANK CO., LLC
4123 Sooner Ln, Little Rock, AR 72206

Publications

Us Patents

Method Of Fabricating A Probe Card

US Patent:
7685705, Mar 30, 2010
Filed:
Jan 11, 2008
Appl. No.:
12/008483
Inventors:
James E. Nulty - San Jose CA, US
James A. Hunter - Campbell CA, US
Alexander J. Herrera - Colorado Springs CO, US
Assignee:
Cypress Semiconductor Corporation - San Jose CA
International Classification:
H01R 9/00
H05K 3/00
US Classification:
29845, 29842, 29846, 29832, 234754, 439190
Abstract:
A probe card for testing dice on a wafer includes a substrate, a number of cantilevers formed on a surface thereof, and a number of probes extending from unsupported ends of the cantilevers. The unsupported ends of the cantilevers project over cavities on the surface of the substrate. The probes have tips to contact pads on the dice under test. The probe card may include a compressive layer above the surface of the substrate with a number of holes through which the probes extend.

Method And Apparatus For End Point Detection

US Patent:
5045149, Sep 3, 1991
Filed:
Jun 22, 1990
Appl. No.:
7/542811
Inventors:
James E. Nulty - San Jose CA
Assignee:
VLSI Technology, Inc. - San Jose CA
International Classification:
H01L 2100
US Classification:
156627
Abstract:
A method and an apparatus for detecting the endpoint in a plasma etching process is disclosed. The invention uses a positive filter and a negative filter simultaneously to generate a first and a second signal respectively. The first and second signals are combined to form a combined signal. A change in the combined signal is indicative of the endpoint.

Plasma Etch Chemistry And Method Of Improving Etch Control

US Patent:
6372634, Apr 16, 2002
Filed:
Jun 15, 1999
Appl. No.:
09/333459
Inventors:
Jianmin Qiao - Fremont CA
Sanjay Thekdi - Santa Clara CA
Manuj Rathor - San Jose CA
James E. Nulty - San Jose CA
Assignee:
Cypress Semiconductor Corp. - San Jose CA
International Classification:
H01L 213065
US Classification:
438637, 438706, 438710, 438723
Abstract:
A plasma etch chemistry and etch methodology is provided to improve critical dimension control for openings formed into and/or through a semiconductor thin film. According to an embodiment, the plasma etch chemistry includes an etchant mixture comprising a first etchant of the formula C H F (where x 2, y 1 and z 2) and a second etchant other than the first etchant to form the openings. The relationship of x, y and z may be such that y+z equals an even number 2x+2. According to an alternative embodiment, the plasma etch chemistry further includes strained cyclic (hydro)fluorocarbon. The plasma etch chemistry may be used to form openings in the layer in a single-etch step. In a further embodiment, the plasma etch chemistry described herein may etch less than the entire thickness of the layer, and a second plasma etch chemistry substantially free of the first etchant and strained cyclic (hydro)fluorocarbons etches the remainder of the layer to form the openings. Such an etch methodology advantageously reduces the risk of etching the materials underlying the layer.

Endpoint Detection System And Method For Plasma Etching

US Patent:
4954212, Sep 4, 1990
Filed:
Sep 26, 1989
Appl. No.:
7/412697
Inventors:
Calvin T. Gabriel - Pacifica CA
James E. Nulty - San Jose CA
Assignee:
VLSI Technology, Inc. - San Jose CA
International Classification:
H01L 21306
B44C 122
C03C 1500
C03C 2506
US Classification:
156627
Abstract:
A plasma etching endpoint detection system and method for plasma etching systems generates an endpoint signal when the etching system completes the etching of a designated layer on a semiconductor wafer and begins etching the layer below the designated layer. An impedance transformation circuit is tuned so that the selected tuning point has a predefined relationship to the point at which minimum power reflection occurs. As a result, when the etching system completes the etching of a designated layer, the amount of power reflected by the plasma etcher will change in a predefined fashion so as to facilitate the generation of an endpoint signal. In one embodiment, a tuning capacitor in the etcher's impedance transformation circuit is set at a level at which it is known that the amount of reflected power will increase when the designated layer has been completely etched. As a result, the intensity of light generated in the plasma will decrease at the endpoint of etching the designated layer. An optical sensor, which is tuned to a frequency at which light is generated while the designated layer is being etched, generates an endpoint signal when the emission intensity decreases below a specified level, and that endpoint signal is used to turn off the etcher's plasma power supply.

Plasma Etching Method

US Patent:
6165375, Dec 26, 2000
Filed:
Sep 23, 1997
Appl. No.:
8/935705
Inventors:
Usha Raghuram - San Jose CA
Kimberley A. Kaufman - Eden Prairie MN
Daniel Arnzen - Eden Prairie MN
James Nulty - San Jose CA
Assignee:
Cypress Semiconductor Corporation - San Jose CA
International Classification:
B44C 122
US Classification:
216 67
Abstract:
The present invention relates to a method of plasma etching and a method of operating a plasma etching apparatus.

Electrostatic Or Mechanical Chuck Assembly Conferring Improved Temperature Uniformity Onto Workpieces Held Thereby, Workpiece Processing Technology And/Or Apparatus Containing The Same, And Method(S) For Holding And/Or Processing A Workpiece With The Same

US Patent:
6373679, Apr 16, 2002
Filed:
Jul 2, 1999
Appl. No.:
09/347437
Inventors:
Jianmin Qiao - Fremont CA
James E. Nulty - San Jose CA
Paul Arleo - San Francisco CA
Siamak Salimian - Sunnyvale CA
Assignee:
Cypress Semiconductor Corp. - San Jose CA
International Classification:
H02N 1300
US Classification:
361230, 361233
Abstract:
An electrostatic or mechanical chuck assembly includes gas inlets only in an annulus-shaped peripheral portion and not in the central region of the chuck. The gas inlets are in fluid communication with one or more gas conduits and supply of the backside of a workpiece, such as a semiconductor wafer, with inert coolant gas or gases. The gas or gases supplied only to the peripheral region of the chuck effectively cool the central region of the chuck by at least two physical mechanisms, including the thermal conduction through the workpiece and diffusion of the gas or gases in the interstitial space(s) between the somewhat irregular facing surfaces of the chuck and of the backside of the workpiece.

Method Of Etching An Oxide Layer

US Patent:
5562801, Oct 8, 1996
Filed:
Dec 7, 1994
Appl. No.:
8/351784
Inventors:
James E. Nulty - San Jose CA
Assignee:
Cypress Semiconductor Corporation - San Jose CA
International Classification:
H01L 2100
US Classification:
1566431
Abstract:
A method of etching an oxide layer is disclosed. First, a resist layer is formed on an oxide layer on a substrate. Next, a photosensitive layer is formed on the oxide layer and patterned to expose regions of the oxide layer to be removed. The exposed regions may overlie a nitride layer, and may overlie a structure such as a polysilicon gate. The etch is performed such that polymer deposits on the photosensitive layer, thus eliminating interactions between the photosensitive layer and the plasma. In this way, a simple etch process allows for good control of the etch, resulting in reduced aspect ratio dependent etch effects, high oxide:nitride selectivity, and good wall angle profile control.

Method For Forming A Stable Plasma

US Patent:
5441596, Aug 15, 1995
Filed:
Jul 27, 1994
Appl. No.:
8/281438
Inventors:
James E. Nulty - San Jose CA
Assignee:
Cypress Semiconductor Corporation - San Jose CA
International Classification:
H05H 100
US Classification:
1566431
Abstract:
A method for forming a stable plasma, particularly in the high power and low pressure ranges. The method may be used in a plasma system such as that used for a plasma etch. First, the radio frequency power is turned on under low power and high pressure. The plasma is allowed to stabilize without tuning. Next, the pressure is dropped to the desired operating level and the tuning system is engaged. After tuning at the low power and low pressure, the radio frequency power is ramped to the desired level. Finally, the system is again tuned at the higher power.

FAQ: Learn more about James Nulty

Where does James Nulty live?

Bixby, OK is the place where James Nulty currently lives.

How old is James Nulty?

James Nulty is 45 years old.

What is James Nulty date of birth?

James Nulty was born on 1979.

What is James Nulty's email?

James Nulty has such email addresses: desireenu***@yahoo.com, cnu***@angelfire.com, lnu***@msn.com, lmcnu***@adelphia.net, tmcnu***@att.net, jmcnu***@yahoo.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is James Nulty's telephone number?

James Nulty's known telephone numbers are: 215-355-5413, 609-823-3919, 732-449-7253, 916-872-8272, 616-531-1083, 813-973-7412. However, these numbers are subject to change and privacy restrictions.

How is James Nulty also known?

James Nulty is also known as: Jim Nulty, Patrick J Nulty. These names can be aliases, nicknames, or other names they have used.

Who is James Nulty related to?

Known relatives of James Nulty are: Sylvester Williams, Sylvester Williams, Cynthia Nulty, James Nulty, Letesha Nulty, Michael Nulty, Shauna Kerby. This information is based on available public records.

What are James Nulty's alternative names?

Known alternative names for James Nulty are: Sylvester Williams, Sylvester Williams, Cynthia Nulty, James Nulty, Letesha Nulty, Michael Nulty, Shauna Kerby. These can be aliases, maiden names, or nicknames.

What is James Nulty's current residential address?

James Nulty's current known residential address is: 13912 S 28Th St, Bixby, OK 74008. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of James Nulty?

Previous addresses associated with James Nulty include: 2 Greer Ct, Perkasie, PA 18944; 200 Pennsylvania Ave, Deland, FL 32720; 250 Kentucky Ave, Deland, FL 32724; 1037 Lenor Way, San Jose, CA 95128; 1009 Oak Pl, Zephyrhills, FL 33544. Remember that this information might not be complete or up-to-date.

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