Craig Swift

In the United States, there are 53 individuals named Craig Swift spread across 37 states, with the largest populations residing in Texas, Virginia, California.

Public information about Craig Swift

Resumes

Accounts Payable Coordinator

Location:

8113 Dock St, Frisco, TX 75035

Industry:

Accounting

Work:

Kmg Chemicals
Accounts Payable Coordinator Cec Entertainment Sep 2010 - Dec 2015
Accounts Payable Administrator Dean Foods Oct 2010 - Sep 2013
Senior Accounts Payable Coordinator P2 Energy Solutions Mar 2007 - Jun 2009
A and P-Joint Interest Billing Accountant International Paper May 2004 - Oct 2006
Senior Accounting Clerk Jani-King International, Inc. Nov 2001 - Jun 2003
Accounts Payable Associate Sage Us 1997 - 2000
Accounts Payable Coordinator

Education:

The University of Texas at Dallas 1995 - 1996
Brookhaven Community College 1992 - 1995
Texas High School
The University of Texas at Austin
Brookhaven College

Skills:

Account Reconciliation, Accounts Payable, Accruals, Accounting, Journal Entries, Invoicing, Microsoft Excel, Customer Service, General Ledger, Microsoft Office, Financial Statements, Payroll, Accounts Receivable, Quickbooks, Financial Reporting, Spreadsheets, Financial Accounting, Access, Peoplesoft, Forecasting

Interests:

Economic Empowerment
Civil Rights and Social Action
Politics
Education
Environment
Poverty Alleviation
Science and Technology
Human Rights

Partner, Individual And Worksite Specialist

Location:

301 east 79Th St, New York, NY 10075

Industry:

Insurance

Work:

Ltc Financial Partners
Partner, Individual and Worksite Specialist

Education:

The Ohio State University 1972
Bachelors, Business Administration, Leadership, History

Regional Drive Specialist

Location:

Chicago, IL

Industry:

Industrial Automation

Work:

Yaskawa America, Inc. - Drives & Motion Division
Regional Drive Specialist Electric Motor Shop & Supply Jul 1997 - Jun 2011
Sales Engineer and Sales and Op Manager Craig Swift Industries Jul 1997 - Jun 2011
Owner Controlco Oct 1984 - Jun 1997
Sales Engineer

Education:

California State University, Bakersfield 1982 - 1983
Bakersfield College 1980 - 1981
Associates

Skills:

Automation, Instrumentation, Industrial Control, Sales, Customer Service, Process Automation, Management, Project Management, Sales Management, Control Systems Design, Motor Control, New Business Development, Microsoft Office, Sales Engineering, Technical Support, Loop Tuning, Harmonics, Harmonic Analysis, Power Quality, Energy Audits, Energy Management, Energy Conservation, Energy Efficiency, Electric Power, Microsoft Excel, Technical Training, Technical Analysis, Electrical Troubleshooting, Electrical Equipment, Electro Mechanical Troubleshooting, Electronic Troubleshooting, Equipment Repair, Electronics Repair, Wiring Diagrams, Hardware Diagnostics, Electrical Controls, Electrical Industry, Electric Motors, Switchgear, Switches, Sensors, Pressure Sensors, Temperature Sensors, Optical Sensors, Plc Ladder Logic, Ladder Logic, Wiring, Power Supplies, Calibration, Field Instruments

Principal Software Engineer

Location:

943 Sunflower St, Louisville, CO 80027

Industry:

Computer Software

Work:

Oracle | Datalogix
Principal Software Engineer Return Path May 2011 - Jan 2017
Principal Software Engineer National Renewable Energy Laboratory Apr 2010 - Apr 2011
Senior Data Analyst Oracle Feb 2010 - Apr 2010
Data Analyst Sun Microsystems Jan 2007 - Feb 2010
Data Analyst Northrop Grumman Corporation Jun 2003 - Apr 2004
Network Security Engineer Sun Microsystems Nov 2000 - Jun 2003
Software Engineer Ibm Nov 1999 - Nov 2000
Student Intern

Education:

University of Colorado Denver 2006 - 2010
Master of Business Administration, Masters, Finance University of Colorado Boulder 1999 - 2002
Bachelors, Bachelor of Science, Computer Science

Skills:

Software Development, Java, Oracle, Perl, Linux, Software Engineering, Unix, Cloud Computing, Programming, Agile Methodologies, Hadoop, Xml, Sql, Solaris, Shell Scripting, Git, Amazon Web Services, Ruby, Python, Hbase, Unix Shell Scripting, Web Applications, Hive, Gnu Make, Github, Junit, Apache, Postgresql, Maven, Ant, Rest, Bash, Javascript, Elasticsearch, Node.js, Apache Storm

Interests:

Science and Technology
Environment

Owner

Location:

Washington, IA

Industry:

Photography

Work:

Studio 909
Owner

Education:

Central College 1971 - 1974
Bachelors, Bachelor of Arts, Art Washington High School, In Washington Iowa 1970
University of Iowa
Washington High School (Washington, Iowa)

Skills:

Digital Photography, Photography, Black and White, Lifestyle Photography, Senior Portraits, Fine Art Photography, Headshots, Boudoir, Architectural Photography, Portrait Photography, Still Life, Landscape Photography, Photos, Studio Photography, On Location, Image, Portraits, Commercial Photography, Event Photography, Images, Reportage, Corporate Portraits, Travel Photography, Location Photography, Retouching, Music Photography, Street Photography, Lifestyle Portraits

Languages:

Spanish
English

Engineering Consultant

Location:

P/O Box 416, Forest Knolls, CA

Industry:

Oil & Energy

Work:

Conestoga-Rovers & Associates (CRA) since Feb 2009
Pipeline Engineer Baker Hughes, PMG Aug 2003 - Mar 2010
Senior Engineer IV Michael Baker Corp Apr 2003 - Aug 2003
Lead Engineer Fluor Corp Oct 2001 - Mar 2003
Manager of Hydraulics Group El Paso Corp Jan 1990 - Oct 2001
Principal Planning Engineer Delhi Gas Pipeline May 1989 - Aug 1989
Engineering Intern Dana Corporation Jan 1986 - Jan 1988
Engineering Intern

Education:

The University of Oklahoma

Skills:

Engineering, Pipelines, Gas, Piping, Inspection, Petroleum, Natural Gas, Feed, Energy, Project Engineering, Project Management, Pumps, Lng, Onshore, Water, Energy Industry, Construction, Contract Management, Project Planning, Autocad, Business Development, Commissioning, Corrosion, Management, Mechanical Engineering, Process Improvement, Risk Management, Engineering Design, Environmental Awareness, Gas Processing, Hydraulics, Manufacturing, Petrochemical, Strategy, Subsea Engineering, Upstream, Asme, Analysis, Budgets, Completion, Drilling, Epc, Factory, Instrumentation, Modeling, Offshore Drilling, Oil and Gas Industry, Oil/Gas, Refinery, Simulations

Interests:

Cena Lover
Exercise
Horses
President Donald Trump Fan Club
Shopping District
Usa Patriots For Donald Trump
Trump News
Brian Bosworth
America the Great
Great Big Story
Community
Arts and Entertainment
Jay Sekulow
We Support Donald Trump
Outdoors
Candid Sandite Photos
Ou Club of Houston
Collecting
Faith Family America
Power of Positivity
Oklahoma Diehards
Chat Sports
Automobiles
Master
Hillary For Prison
Weird History
Conservatives That Love America
Travel
Bureau Veritas
Judicial Watch
Florida
American Daily Patriot
Survival Kit Giveaway
Politician
Energy Transfer
Jayz Bbq
Organization
Goalcast
Dennis Michael Lynch
George Bush Intercontinental Airport
Star Trek Fans
Nuclear Matters
Collecting Antiques
Political Organization
City
Reading
Conservative News Today
Bourne
Just For Fun
Sooner Nation
Personal Blog
Trump Pence 2016
Government Website
Movie
Girl Loving Life
Stop Illegal Immigration
The Daily Caller
Donald Trump Is Our President
Kids
Airport
Facebook Engineering
Donald J
Old Sacramento
Trump
Furniture Store
Other
Populist Wire
Broadcasting and Media Production Company
School Sports Team
Nathan Johnson For Tx Senate
Brewery
Donald Trump Fan Club
News and Media Website
Oklahoma Football
Us Chronicle
Food Stand
Rolex
Pbs
Com
The Wildcard
American Restaurant
Ben Shapiro
Tv Show
Teddy Stick
Company
Oklahoma Sooners on 247Sports
Military Machine
Sports
Political Candidate
100 Percent Fed Up
Erin Brockovich
Gardening
Gallery Furniture
Alpha Battery
Prageru
Music
Star Trek Beyond
Liberty Chronicle
Movies
Patriots United
Conservative Tribune
Christianity
Do For America
Conservative Book Club
Donald Trump Is My President
Key West
Oklahoma Sooners Football Fan Hq
Daily Vine
The Committee To Defend the President
Rare America
Season's Harvest Cafe
Conservative Register
Tv Network
Powerbar
Jimmy Kimmel Live
Stadium
Media
Unite For Trump
Home Improvement
Rightalerts
Proud To Be Conservative
Cause
Never Again Canada
America 1St
Shifting Lanes
The Arts
Commando
Nbc Dfw
Kurt and Sydney's Adoption
Food and Beverage
Electronics
Nonprofit Organization
Business Consultant
Website
Sandites Pages
Athlete
Family Values
Cbs Sports College Football
Eavesdrop Brewery
Publisher
Energy Company
Magazine
Ben Ferguson
Ntd Television
Rob Roy
Mike Rowe
I Trust Science More Than Religion
Us Patriot News
Tell Me Now
Pbs Newshour
1 79 Fa Basic Combat Training
Public Figure
The Spun
Michael Chitwood
Media/News Company
News Personality
Esquire Uk

Languages:

English
French

Certifications:

Pe In Tx, La, Ok, Ks, & Ca
Pipeline Intrinsic Pigging Element (Provisional, Utility Patent Pending)
Standardized Pipeline Observation Tool (Spot)
Pe In Tx, La, Ok, Ks
License Us 62/183,366 (Pending)

Pe, Se, Leed Ap - Principal

Location:

Charlottesville, VA

Industry:

Civil Engineering

Work:

Keast & Hood Oct 2015 - Jul 2018
Principal Springpoint Structural Oct 2015 - Jul 2018
Pe, Se, Leed Ap - Principal University of Virginia Jul 2014 - Sep 2015
Assistant Director - Project Services Keast & Hood Jan 2010 - Jul 2014
Associate and Office Director Montgomery County Feb 2010 - Mar 2013
Montgomery County Historic Preservation Commission The Sk&A Group Nov 2008 - Jan 2010
Project Engineer Structural Focus Jul 2003 - Oct 2008
Design Engineer Engineering Ministries International (Emi) May 2002 - Oct 2002
Civil Engineering Intern

Education:

University of California, Los Angeles 2003 - 2004
Master of Science, Masters, Civil Engineering Virginia Tech 1998 - 2002
Bachelors, Bachelor of Science, Engineering

Skills:

Structural Engineering, Construction, Historic Preservation, Seismic Design, Project Management, Earthquake Engineering

Craig Swift

Location:

Danville, VA

Industry:

Internet

Work:

Main Bv
Cna

Phones & Addresses

Name

Addresses

Phones

Craig J Swift

635 Walden Cir, Boulder, CO 80305

720-304-3404

Craig J Swift

880 Moorhead Ave, Boulder, CO 80305

720-304-3404

Craig Swift

New York, NY

212-706-8666

Craig J Swift

880 Moorhead Cir, Boulder, CO 80305

720-304-3404

Craig J Swift

909 Iowa Ave, Washington, IA 52353

319-653-2396

Craig Swift

Kensington, MD

240-558-4706

Craig J Swift

1665 Island Dr, Highland Twp, MI 48356

Craig J Swift

6509 Knox Dr, Brighton Twp, MI 48116

810-229-8597

Business Records

Name / Title

Company / Classification

Phones & Addresses

Craig Allen Swift
President

CRAIG SWIFT INDUSTRIES, INC
Nonclassifiable Establishments

2142 Alamos Ave, Clovis, CA 93611

Craig Swift
Owner

Hevanet Communications
Wired Telecommunications Carriers · Internet Service

320 SW Stark St #419, Portland, OR 97204
503-228-3520, 503-274-4144

Craig Swift
Owner

Hevanet Internet
Data Processing Service

1190 SW 170Th Ave #101, Beaverton, OR 97006
503-228-3520

Craig Swift
Owner

Hevanet Internet
Data Processing Service

1190 SW 170 Ave #101, Beaverton, OR 97006
503-228-3520

Craig Swift
CFO

WENTWORTH CHEVROLET CO
Automobile and Other Motor Vehicle Merchant Wholesalers · New Car Dealers

107 SE Grand, Portland, OR 97214
1200 SW Main St, Portland, OR 97205
503-232-2000, 877-317-9824

Craig Swift
Sales Executive

Electric Motor Shop & Supply
Electrical Apparatus and Equipment Wiring Sup...

253 Fulton St, Fresno, CA 93721

Craig Swift
CTO

Vogue Travel Inc
Professional Training & Coaching · Travel Agency · Lessors of Nonresidential Buildings (except Miniwarehouses)

111 SW Columbia St #100, Portland, OR 97201
503-228-2285, 503-223-4777

Craig Swift
Manager

PERFORMANCE MARINE, INC
Ret Boats & Snowmobiles

4544 Cloudcrest, Medford, OR 97504
541-770-5177

Publications

Us Patents

Method For Removing Nanoclusters From Selected Regions

US Patent:

6964902, Nov 15, 2005

Filed:

Feb 26, 2004

Appl. No.:

10/787510

Inventors:

Robert F. Steimle - Austin TX, US
Jane A. Yater - Austin TX, US
Gowrishankar L. Chindalore - Austin TX, US
Craig T. Swift - Austin TX, US
Steven G. H. Anderson - Austin TX, US
Ramachandran Muralidhar - Austin TX, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L021/336

US Classification:

438258, 438260, 257258, 257298, 257314, 257500, 36518529

Abstract:

Nanoclusters are blanket deposited on an integrated circuit and then removed from regions where the nanoclusters are not desired. A sacrificial layer is formed in those regions where the nanoclusters are not desired prior to the blanket deposition. The nanoclusters and the sacrificial layer are then removed. In one form, the sacrificial layer includes a deposited nitride containing or oxide containing layer. Alternatively, the sacrificial layer includes at least one of a pad oxide or a pad nitride layer previously used to form isolation regions in the substrate. Nanocluster devices and non-nanocluster devices may then be integrated onto the same integrated circuit. The use of a sacrificial layer protects underlying layers thereby preventing the degradation of performance of the subsequently formed non-nanocluster devices.

Programming And Erasing Structure For A Floating Gate Memory Cell And Method Of Making

US Patent:

7094645, Aug 22, 2006

Filed:

Sep 17, 2004

Appl. No.:

10/944239

Inventors:

Craig T. Swift - Austin TX, US
Gowrishankar L. Chindalore - Austin TX, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/8247

US Classification:

438261, 438594

Abstract:

A floating gate memory cell has a floating gate in which there are two adjacent floating gate layers. The top layer is made to have a contour while leaving the lower layer substantially unchanged. An interlevel dielectric and a control gate follow the contour of the floating gate to increase capacitance between the control gate and the floating gate. The two layers of the floating gate can be polysilicon in which the top layer has the contour formed therein by use of a sacrificial layer. The sacrificial layer is formed over the bottom polysilicon layer and etched. The top polysilicon layer is formed over the sacrificial layer. Subsequent processing of the top polysilicon layer exposes the remaining portion of the sacrificial layer so it can be removed; leaving the contour in the top polysilicon layer for the interlevel dielectric and the control gate.

Multi-Bit Non-Volatile Memory Device And Method Therefor

US Patent:

6706599, Mar 16, 2004

Filed:

Mar 20, 2003

Appl. No.:

10/393065

Inventors:

Michael Sadd - Austin TX
Bruce E. White - Round Rock TX
Craig T. Swift - Austin TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 218247

US Classification:

438261, 438287

Abstract:

A multi-bit non-volatile memory device includes a charge storage layer ( ) sandwiched between two insulating layers ( and ) formed on a semiconductor substrate ( ). A thick oxide layer ( ) is formed over the charge storage layer ( ) and a minimum feature sized hole is etched in the thick oxide layer ( ). An opening is formed in the thick oxide layer ( ). Side-wall spacers ( ) formed on the inside wall of the hole over the charge storage layer have a void ( ) between them that is less than the minimum feature size. The side-wall spacers ( ) function to mask portions of the charge storage layer ( ), when the charge storage layer is etched away, to form the two separate charge storage regions ( and ) under the side-wall spacers ( ). The device can be manufactured using only one mask step. Separating the charge storage regions prevents lateral conduction of charge in the nitride.

Programming And Erasing Structure For An Nvm Cell

US Patent:

7105395, Sep 12, 2006

Filed:

Aug 31, 2004

Appl. No.:

10/930891

Inventors:

James David Burnett - Austin TX, US
Gowrishankar L. Chindalore - Austin TX, US
Craig T. Swift - Austin TX, US
Ramachandran Muralidhar - Austin TX, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 29/72

US Classification:

438197, 438300, 438694, 257344

Abstract:

A non-volatile memory (NVM) has a silicon germanium (SiGe) drain that is progressively more heavily doped toward the surface of the substrate. The substrate is preferably silicon and the drain is formed by first forming a cavity in the substrate in the drain location. SiGe is epitaxially grown in the cavity with an increasing doping level. Thus, the PN junction between the substrate and the drain is lightly doped on both the P and N side. The drain progressively becomes more heavily doped until the maximum desired doping level is reached, and the remaining portion of the SiGe drain is doped at this maximum desired level. As a further enhancement, the perimeter of the SiGe in the substrate is the same conductivity type as that of the substrate and channel. Thus a portion of the channel is in the SiGe.

Method Of Discharging A Semiconductor Device

US Patent:

7160775, Jan 9, 2007

Filed:

Aug 6, 2004

Appl. No.:

10/912825

Inventors:

Erwin J. Prinz - Austin TX, US
Ramachandran Muralidhar - Austin TX, US
Rajesh A. Rao - Austin TX, US
Michael A. Sadd - Austin TX, US
Robert F. Steimle - Austin TX, US
Craig T. Swift - Austin TX, US
Bruce E. White - Round Rock TX, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/336

US Classification:

438257, 438260, 438264, 257321, 257317, 257E21422, 36518526

Abstract:

In one embodiment, a method for discharging a semiconductor device includes providing a semiconductor substrate, forming a hole blocking dielectric layer over the semiconductor substrate, forming nanoclusters over the hole blocking dielectric layer, forming a charge trapping layer over the nanoclusters, and applying an electric field to the nanoclusters to discharge the semiconductor device. Applying the electric field may occur while applying ultraviolet (UV) light. In one embodiment, the hole blocking dielectric layer comprises forming the hole blocking dielectric layer having a thickness greater than approximately 50 Angstroms.

Non-Volatile Memory Device Having An Anti-Punch Through (Apt) Region

US Patent:

6713812, Mar 30, 2004

Filed:

Oct 9, 2002

Appl. No.:

10/267199

Inventors:

Alexander B. Hoefler - Austin TX
Gowrishankar L. Chindalore - Austin TX
Paul A. Ingersoll - Austin TX
Craig T. Swift - Austin TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 29788

US Classification:

257316, 257323, 257408, 257409

Abstract:

A memory device ( ) that uses a non-volatile storage element ( ), such as nitride, has reduced read disturb, which is the problem of tending to increase the threshold voltage of a memory device ( ) during a read. To reduce this effect, the memory device ( ) uses a counterdoped channel ( ) to lower the natural threshold voltage of the device ( ). This counterdoping can even be of sufficient dosage to reverse the conductivity type of the channel ( ) and causing a negative natural threshold voltage. This allows for a lower gate voltage during read to reduce the adverse effect of performing a read. An anti-punch through (ATP) region ( ) below the channel ( ) allows for the lightly doped or reversed conductivity type channel ( ) to avoid short channel leakage. A halo implant ( ) on the drain side ( ) assists in hot carrier injection (HCI) so that the HCI is effective even though the channel ( ) is lightly doped or of reversed conductivity type.

Programming And Erasing Structure For A Floating Gate Memory Cell And Method Of Making

US Patent:

7183161, Feb 27, 2007

Filed:

Sep 17, 2004

Appl. No.:

10/944244

Inventors:

Gowrishankar L. Chindalore - Austin TX, US
Craig T. Swift - Austin TX, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/336

US Classification:

438264, 438296, 438594

Abstract:

A floating gate memory cell has a floating gate in which there are two floating gate layers. The top layer is etched to provide a contour in the top layer while leaving the lower layer unchanged. The control gate follows the contour of the floating gate to increase capacitance therebetween. The two layers of the floating gate can be polysilicon separated by a very thin etch stop layer. This etch stop layer is thick enough to provide an etch stop during a polysilicon etch but preferably thin enough to be electrically transparent. Electrons are able to easily move between the two layers. Thus the etch of the top layer does not extend into the lower layer but the first and second layer have the electrical effect for the purposes of a floating gate of being a continuous conductive layer.

Programming, Erasing, And Reading Structure For An Nvm Cell

US Patent:

7195983, Mar 27, 2007

Filed:

Aug 31, 2004

Appl. No.:

10/930892

Inventors:

Gowrishankar L. Chindalore - Austin TX, US
James David Burnett - Austin TX, US
Craig T. Swift - Austin TX, US
Ramachandran Muralidhar - Austin TX, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L 21/336

US Classification:

438301, 438197, 438300, 438694, 257E21209, 257E21634, 257E21636

Abstract:

A non-volatile memory (NVM) has a silicon germanium (SiGe) drain and a silicon carbon (SiC) source. The source being SiC provides for a stress on the channel that improves N channel mobility. The SiC also has a larger bandgap than the substrate, which is silicon. This results in it being more difficult to generate electron/hole pairs by impact ionization. Thus, it can be advantageous to use the SiC region for the drain during a read. The SiGe is used as the drain for programming and erase. The SiGe, having a smaller bandgap than the silicon substrate results in improved programming by generating electron/hole pairs by impact ionization and improved erasing by generating electron hole/pairs by band-to-band tunneling, both at lower voltage levels.

Videos & Images

FAQ: Learn more about Craig Swift

What are the previous addresses of Craig Swift?

Previous addresses associated with Craig Swift include: 409 Macomb St, Belvidere, IL 61008; 113 Rockland St, New Bedford, MA 02740; 2611 Brantley Ct, Saint Louis, MO 63129; 726 14Th, Medford, OR 97501; 2020 Bratton Place Dr, Franklin, TN 37067. Remember that this information might not be complete or up-to-date.

Where does Craig Swift live?

Pueblo, CO is the place where Craig Swift currently lives.

How old is Craig Swift?

Craig Swift is 47 years old.

What is Craig Swift date of birth?

Craig Swift was born on 1977.

What is Craig Swift's email?

Craig Swift has such email addresses: maild***@hotmail.com, craig.sw***@sbcglobal.net, csw***@tds.net, cfswif***@excite.com, cswif***@aol.com, craigsw***@netscape.net. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is Craig Swift's telephone number?

Craig Swift's known telephone numbers are: 212-706-8666, 240-558-4706, 401-738-1630, 603-216-2924, 719-676-7148, 734-335-6915. However, these numbers are subject to change and privacy restrictions.

Who is Craig Swift related to?

Known relatives of Craig Swift are: Rhonda Kelly, Hally Wight, Eunice Swift, Jane Swift, Rendi Swift, Arnald Swift, Frank Moore. This information is based on available public records.

What are Craig Swift's alternative names?

Known alternative names for Craig Swift are: Rhonda Kelly, Hally Wight, Eunice Swift, Jane Swift, Rendi Swift, Arnald Swift, Frank Moore. These can be aliases, maiden names, or nicknames.

What is Craig Swift's current residential address?

Craig Swift's current known residential address is: 100 San Carlos, Pueblo, CO 81005. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Craig Swift?

Ages	31 to 74
Phones	212-706-8666	240-558-4706	401-738-1630
Addresses	2142 Alamos, Clovis, CA 93611	409 Macomb St, Belvidere, IL 61008	113 Rockland St, New Bedford, MA 02740
Business records	Owner / I*Media	Pipeline Engineer / Conestoga-Rovers & Associates (CRA)	Owner / Studio 909

Craig Swift

What do we know about Craig Swift

Public information about Craig Swift

Resumes

Resumes

Accounts Payable Coordinator

Partner, Individual And Worksite Specialist

Regional Drive Specialist

Principal Software Engineer

Owner

Engineering Consultant

Pe, Se, Leed Ap - Principal

Craig Swift

Phones & Addresses

Business Records

Publications

Us Patents

Method For Removing Nanoclusters From Selected Regions

Programming And Erasing Structure For A Floating Gate Memory Cell And Method Of Making

Multi-Bit Non-Volatile Memory Device And Method Therefor

Programming And Erasing Structure For An Nvm Cell

Method Of Discharging A Semiconductor Device

Non-Volatile Memory Device Having An Anti-Punch Through (Apt) Region

Programming And Erasing Structure For A Floating Gate Memory Cell And Method Of Making

Programming, Erasing, And Reading Structure For An Nvm Cell

FAQ: Learn more about Craig Swift

Possible Relatives