Colin Whelan

In the United States, there are 19 individuals named Colin Whelan spread across 14 states, with the largest populations residing in California, Georgia, Massachusetts.

Last updated Mar 10, 2024

Public information about Colin Whelan

Phones & Addresses

Name

Addresses

Phones

Colin J Whelan

317 Meadowridge Dr, Warner Robins, GA 31093

478-922-7377, 478-929-4076

Colin P Whelan

4265 Webster Ave, Bronx, NY 10470

Colin J Whelan

109 Eastwick Dr, Kathleen, GA 31047

Colin S Whelan

16 Myrtle Ter, Wakefield, MA 01880

781-587-0095

Colin S Whelan

16 Myrtle Ave, Wakefield, MA 01880

781-587-0095

Colin J Whelan

223 Randy Cir, Warner Robins, GA 31088

Colin S Whelan

2 Legion Rd, Cherry Brook, MA 02493

Colin S Whelan

373 Highland Ave, Somerville, MA 02144

617-776-9720

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Publications

Us Patents

Input Circuitry For Transistor Power Amplifier And Method For Designing Such Circuitry

US Patent:

7609115, Oct 27, 2009

Filed:

Sep 7, 2007

Appl. No.:

11/851425

Inventors:

Colin S. Whelan - Wakefield MA, US
John C. Tremblay - Lancaster MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H03F 3/191

US Classification:

330302, 330305

Abstract:

A circuit having: an input matching network; a transistor coupled to an output of the input matching network; and wherein the input matching network has a first input impedance when such input matching network is fed with an input signal having a relatively low power level and wherein the input matching network has an input impedance different from the first input impedance when such input matching network is fed with an input signal having a relatively high power level.

Method And Structure For Reducing Cracks In A Dielectric Layer In Contact With Metal

US Patent:

7863665, Jan 4, 2011

Filed:

Mar 29, 2007

Appl. No.:

11/693365

Inventors:

Barry J. Liles - Westborough MA, US
Colin S. Whelan - Wakefield MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 27/108
H01L 29/94

US Classification:

257303, 257 68, 257 71, 257296, 257306, 257906, 257E21008, 257E27048, 257E27092, 257E29346, 438239, 438386, 438393, 438396

Abstract:

A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal.

Method Of Forming A Self-Aligned, Selectively Etched, Double Recess High Electron Mobility Transistor

US Patent:

6838325, Jan 4, 2005

Filed:

Oct 24, 2002

Appl. No.:

10/279358

Inventors:

Colin S. Whelan - Wakefield MA, US
Elsa K. Tong - Wayland MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 218252

US Classification:

438172, 438174, 438571, 438704

Abstract:

A method is provided for forming a self-aligned, selectively etched, double recess high electron mobility transistor. The method includes providing a semiconductor structure having a III-V substrate; a first relatively wide band gap layer, a channel layer, a second relatively wide band gap Schottky layer, an etch stop layer; a III-V third wide band gap layer on etch stop layer; and an ohmic contact layer on the third relatively wide band gap layer. A mask is provided having a gate contact aperture to expose a gate region of the ohmic contact layer. A first wet chemical etch is brought into contact with portions of the ohmic contact layer exposed by the gate contact aperture. The first wet chemical selectively removes exposed portions of the ohmic contact layer and underlying portions of the third relatively wide band gap layer. The etch stop layer inhibits the first wet chemical etch from removing portions of such etch stop layer. Next, a second wet chemical etch is brought into contact with structure etched by the first wet chemical etch.

Frequency Selective Limiter

US Patent:

2015013, May 14, 2015

Filed:

Nov 12, 2013

Appl. No.:

14/077909

Inventors:

- Waltham MA, US
Francois Y. Colomb - Westford MA, US
Robert E. Leoni - Somerville MA, US
Colin S. Whelan - Wakefield MA, US
Traugott Carl Ludwig Gerhard Soliner - Winchester MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01P 9/02
H01P 1/203
H01P 1/22
H01P 9/00

US Classification:

333162, 333161, 333 81 A

Abstract:

A selective frequency limiter having a magnetic material and a slow wave structure disposed to magnetically couple a magnetic field, produced by electromagnetic energy propagating through the slow wave structure, into the magnetic material.

Split-Channel High Electron Mobility Transistor (Hemt) Device

US Patent:

2004026, Dec 30, 2004

Filed:

Jun 26, 2003

Appl. No.:

10/606820

Inventors:

Philbert Marsh - Andover MA, US
Colin Whelan - Wakefield MA, US
William Hoke - Wayland MA, US

International Classification:

H01L031/0328
H01L031/072

US Classification:

257/194000, 257/192000, 257/195000

Abstract:

A transistor structure having an gallium arsenide (GaAs) semiconductor substrate; a lattice match layer; an indium aluminum arsenide (InAlAs) barrier layer disposed over the lattice match layer; an InGaAs lower channel layer disposed on the barrier layer, where y is the mole fraction of In content in the lower channel layer; an InGaAs upper channel layer disposed on the lower channel layer, where x is the mole fraction of In content in the upper channel layer and where x is different from y; and an InAlAs Schottky layer on the InGaAs upper channel layer. The lower channel layer has a bandgap greater that the bandgap of the upper channel layer. The lower channel layer has a bulk electron mobility lower than the bulk electron mobility of the upper channel layer where.

Sulfide Encapsulation Passivation Technique

US Patent:

6924218, Aug 2, 2005

Filed:

Dec 17, 2002

Appl. No.:

10/321310

Inventors:

Philbert Francis Marsh - Andover MA, US
Colin S. Whelan - Wakefield MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L021/44

US Classification:

438570, 438572, 438 92

Abstract:

A method for passivating a III-V material Schottky layer of a field effect transistor. The transistor has a gate electrode in Schottky contact with a gate electrode contact region of the Schottky layer. The gate electrode is adapted to control a flow of carriers between a source electrode of the transistor and a drain electrode of such tarnsistor. The transistor has exposed surface portions of the Schottky layer beween the source electrode and the drain electrode adjacent to the gate electrode contact region of the Schottky layer. The method includes removing organic contamination from the exposed surface portions of the Schottky layer using a oxygen plasma. The contamination removed surface portions of the Schottky layer are exposed to a solution of ammonium sulfide and NHOH. After removal of the solution, the exposed regions are dried in a nitrogen enviroment. A layer of passivating material is deposited over the dried surface portions.

Photodiode Passivation Technique

US Patent:

7030032, Apr 18, 2006

Filed:

May 13, 2003

Appl. No.:

10/437095

Inventors:

Philbert Francis Marsh - Andover MA, US
Colin Steven Whelan - Wakefield MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/302

US Classification:

438745, 438754, 257444

Abstract:

A method for passivating a photodiode so as to reduce dark current, I, due to the exposed semiconductor material on the sidewall of the device. The method includes etching away sidewall surface damage using a succinic acid-hydrogen peroxide based sidewall etch. This is followed by a subsequent hydrochloric acid (HCl)-based surface treatment which completes the surface treatment and reduces the dark current I. Finally, a polymer coating of benzocyclobutene (BCB) is applied after the surface treatment to stabilize the surface and prevent oxidation and contamination which would otherwise raise the dark current were the diodes left with no coating. The BCB is then etched away from the contact pad areas to allow wirebonding and other forms of electrical contact to the diodes. Such method effectively stabilizes the etched surfaces of photodiodes resulting in significantly reduced and stable dark current.

Method For Designing Input Circuitry For Transistor Power Amplifier

US Patent:

7528649, May 5, 2009

Filed:

Sep 7, 2007

Appl. No.:

11/851418

Inventors:

Colin S. Whelan - Wakefield MA, US
Raghu Mallavarpu - Boxborough MA, US
Matthew C. Tyhach - Medford MA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

G01R 19/00

US Classification:

330 2, 330129

Abstract:

Videos & Images

Colin Whelan - Tired And Emotional!

Duration:

Category:

People & Blogs

Description:

Singing Cast's "Walkaway". Happy in a haze in a drunken hour. This video was taken backstage at Glastonbury when Colin was hanging with some fellow musicians.

Archimedes

Duration:

9m 59s

Category:

Comedy

Description:

The story of Archimedes told through parodies of popular movies and TV shows. A Calculus 12 Project by Michael Silverwood, Trevor Alexander, Colin Whelan, Ryan Talbot and Jay Park.

FAQ: Learn more about Colin Whelan

What is Colin Whelan's telephone number?

Colin Whelan's known telephone numbers are: 610-585-2058, 301-881-8292, 310-567-6719, 781-424-5687, 469-267-4703, 478-953-6382. However, these numbers are subject to change and privacy restrictions.

How is Colin Whelan also known?

Colin Whelan is also known as: Colin Whelan, Coln Whelan, Collen J Whelan, Collin J Whelan, Whelan Coln. These names can be aliases, nicknames, or other names they have used.

Who is Colin Whelan related to?

Known relatives of Colin Whelan are: James Whelan, Leah Whelan, Robert Whelan, Robin Whelan, Trevor Whelan, Windy Whelan, Autumn Bell, Heather Hendrickson, Charise Tuitt, Edward Finella. This information is based on available public records.

What are Colin Whelan's alternative names?

Known alternative names for Colin Whelan are: James Whelan, Leah Whelan, Robert Whelan, Robin Whelan, Trevor Whelan, Windy Whelan, Autumn Bell, Heather Hendrickson, Charise Tuitt, Edward Finella. These can be aliases, maiden names, or nicknames.

What is Colin Whelan's current residential address?

Colin Whelan's current known residential address is: 135 Broomsedge Ln, Kathleen, GA 31047. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Colin Whelan?

Previous addresses associated with Colin Whelan include: 100 Wakefield Ave, Yonkers, NY 10704; 109 Eastwick Dr, Kathleen, GA 31047; 840 Milmont Ave, Swarthmore, PA 19081; 223 Randy Cir, Warner Robins, GA 31088; 11009 Luxmanor Rd, Rockville, MD 20852. Remember that this information might not be complete or up-to-date.

Where does Colin Whelan live?

Rockwall, TX is the place where Colin Whelan currently lives.

How old is Colin Whelan?

Colin Whelan is 61 years old.

What is Colin Whelan date of birth?

Colin Whelan was born on 1962.

What is Colin Whelan's email?

Colin Whelan has such email addresses: pauljwhe***@comcast.net, colin.whe***@worldnet.att.net, rcwhe***@goldlink.net, colinwhe***@yahoo.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

Possible Relatives

Cynthia Whelan David Whelan Dawn Whelan Deanna Whelan Debbie Whelan Deborah Whelan Dan Whelan Colin Johnson Colin Johnston Colin White

Name Variants	Collin Whelan	Cole Whelan
Ages	26 to 61
Phones	610-585-2058	301-881-8292	310-567-6719
Addresses	135 Broomsedge Ln, Kathleen, GA 31047	100 Wakefield Ave, Yonkers, NY 10704	109 Eastwick Dr, Kathleen, GA 31047
Business records	VP Alternative Development & Current Programmi... / NBCUniversal, Inc.	Associate / Ftv Capital	Tax Intern / Bdo

Colin Whelan

What do we know about Colin Whelan

Public information about Colin Whelan

Phones & Addresses

Publications

Us Patents

Input Circuitry For Transistor Power Amplifier And Method For Designing Such Circuitry

Method And Structure For Reducing Cracks In A Dielectric Layer In Contact With Metal

Method Of Forming A Self-Aligned, Selectively Etched, Double Recess High Electron Mobility Transistor

Frequency Selective Limiter

Split-Channel High Electron Mobility Transistor (Hemt) Device

Sulfide Encapsulation Passivation Technique

Photodiode Passivation Technique

Method For Designing Input Circuitry For Transistor Power Amplifier

FAQ: Learn more about Colin Whelan

Possible Relatives