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Steven Merchant
In the United States, there are 160 individuals named Steven Merchant spread across 41 states, with the largest populations residing in California, Florida, Michigan.
Last updated 2024-03-05
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Steven Merchant , ~32
Leesburg, FL
- Also known as:
- Stephen M Merchant
- Has lived in:
- Leesburg, FL
- Wildwood, FL
- Orlando, FL
- Related to:
- Brandy Merchant, 29
- Christine Merchant, 60
- Don Slover, 80
- Ricky Slover, 39
- Phone number:
- 352-638-****
Steven J Merchant , ~46
Columbia, SC
- Has lived in:
- Columbia, SC
- Wahiawa, HI
- Tripler Army Medical Center, HI
- Fort Polk, LA
- Related to:
- Robert Merchant, 63
- Sandra Merchant, 62
- Steven Merchant, 47
- John Braxton, 71
- Phone number:
- 803-740-****
Steven J Merchant , ~53
Sulligent, AL
- Also known as:
- Steven M Merchant
- Steve J Merchant
- Has lived in:
- Sulligent, AL
- Beaverton, AL
- Hamilton, AL
- Detroit, AL
- Related to:
- Mary Merchant, 49
- Melissa Baker, 50
- Charles Gibbs, 54
- Joseph Sandlin, 35
- Phone number:
- 205-273-****
Steven W Merchant , ~71
Prescott Valley, AZ
- Also known as:
- Steven E Merchant
- Steven C Merchant
- Steve Merchant
- Steven S
- Has lived in:
- Prescott Valley, AZ
- Bemidji, MN
- Prescott, AZ
- Prescott Vly, AZ
- Related to:
- Julie Johnson, 77
- Ryan Merchant
- Sarah Butler, 36
- Timothy Mancino
- Phone number:
- 928-775-****
Steven D Merchant , ~55
Easton, MD
- Also known as:
- Merchant Steven
- Merchant D Laurie
- Has lived in:
- Easton, MD
- Mardela Springs, MD
- Salisbury, MD
- Mardela Spgs, MD
- Related to:
- Robert Simmons, 43
- Hazel Glover
- Sherita Glover, 45
- Norman Gibson, 73
- Phone number:
- 410-334-****
- 410-421-****
- 410-544-****
Steven S Merchant , ~61
Idleyld Park, OR
- Also known as:
- Vern Merchant
- Steve S Merchant
- Has lived in:
- Idleyld Park, OR
- Pflugerville, TX
- Austin, TX
- Eugene, OR
- Related to:
- Jeremy Juarez, 30
- Daniel Merchant, 31
- Shaun Merchant, 58
- Jessie James, 41
- Phone number:
- 541-607-****
Steven R Merchant , ~37
Williamsburg, MI
- Has lived in:
- Williamsburg, MI
- Yorktown, VA
- Kewadin, MI
- Norfolk, VA
- Related to:
- Peggy Snyder
- Ronald Snyder, 60
- Jenna Hubbell, 32
- Paul Hubbell, 61
Steven A Merchant , ~41
Anderson, SC
- Has lived in:
- Anderson, SC
- Greenwood, SC
- Saluda, SC
- Simpsonville, SC
- Related to:
- Steven Merchant
- Robert Manning, 56
- Patrick Williams, 56
- Kelly Moore, 30
Steven A Merchant , ~31
Huntington Beach, CA
- Has lived in:
- Huntington Beach, CA
- Huntingtn Bch, CA
- Leonardtown, MD
- Related to:
- Denise Merchant, 73
- Glen Merchant, 59
- Glenn Merchant, 73
- Eric Davis, 42
Steven L Merchant Deceased
Kalamazoo, MI
- Has lived in:
- Kalamazoo, MI
- Portage, MI
- Miami, FL
- Related to:
- Sherri Merchant, 55
- Amber Merchant, 29
- Deborah Theriot, 80
- Stephanie Theriot
Public information about Steven Merchant
Phones & Addresses
Name
Addresses
Phones
Steven C Merchant
Steven C Merchant
Steven C Merchant
Steven C Merchant
509-466-5351, 509-892-7799, 509-892-9244, 509-982-9244
Steven Merchant
Steven Merchant
Business Records
Name / Title
Company / Classification
Phones & Addresses
Secretary
RAY'S AUTO BODY, INC
Auto Body Repair
Auto Body Repair
137 Terryville Rd, Bristol, CT 06010
Saw Ml Rd, Plymouth, CT 06782
860-583-9273
Saw Ml Rd, Plymouth, CT 06782
860-583-9273
Insurance Seller
Otero County Title, Inc
Insurance Agent/Broker · Title Companies
Insurance Agent/Broker · Title Companies
115 W 3 St, Bents Old Fort, CO 81050
PO Box 880, Bents Old Fort, CO 81050
719-286-3004, 719-384-4485
PO Box 880, Bents Old Fort, CO 81050
719-286-3004, 719-384-4485
Doctor Of Dental Surgery
Merchant, Steven J Dds
Offices and Clinics of Dentists
Offices and Clinics of Dentists
3144 El Camino Real Ste 205, Carlsbad, CA 92008
Vice Presi
BOB TROUTT ENTERPRISES, INC
11419 Mathis Ave STE 208 %LEE JENKINS, Dallas, TX 75234
400 Oak Trl, Lewisville, TX 75067
400 Oak Trl, Lewisville, TX 75067
Chairman
Florida Real Estate Foundation, Inc
Membership-Basis Lodging
Membership-Basis Lodging
PO Box 609400, Orlando, FL 32860
1330 Lee Rd, Orlando, FL 32810
407-513-7276
1330 Lee Rd, Orlando, FL 32810
407-513-7276
Insurance Seller
Otero County Title, Inc
Insurance Agents, Brokers, And Service
Insurance Agents, Brokers, And Service
7540 Graber Rd, Bents Old Fort, CO 81432
Doctor Of Dental Surgery
Merchant Steven MD
Offices and Clinics of Dentists
Offices and Clinics of Dentists
3144 El Camino Real, Carlsbad, CA 92008
760-434-5066
760-434-5066
Director, President, Secretary, Treasurer
Merchant Management
2360 Corporate Cir, Henderson, NV 89074
1494 Anchor Pl, San Marcos, CA 92078
1494 Anchor Pl, San Marcos, CA 92078
Publications
Us Patents
Distributed High Voltage Jfet
US Patent:
7605412, Oct 20, 2009
Filed:
Sep 22, 2006
Appl. No.:
11/534395
Inventors:
Philip L. Hower - Concord MA, US
David A. Walch - Bedford NH, US
John Lin - Chelmsford MA, US
Steven L. Merchant - Bedford NH, US
David A. Walch - Bedford NH, US
John Lin - Chelmsford MA, US
Steven L. Merchant - Bedford NH, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 31/112
US Classification:
257270, 257285, 257E2163, 438186
Abstract:
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
High Voltage Depletion Fet Employing A Channel Stopping Implant
US Patent:
7736961, Jun 15, 2010
Filed:
Jun 28, 2005
Appl. No.:
11/168047
Inventors:
Steven L. Merchant - Bedford NH, US
Philip L. Hower - Concord MA, US
Scott Paiva - Nashua NH, US
Philip L. Hower - Concord MA, US
Scott Paiva - Nashua NH, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/337
US Classification:
438186, 257E27148, 257E29265, 257E21403, 257E21421
Abstract:
A high voltage field effect transistor device is fabricated. A substrate is provided. Isolation structures and well regions are formed therein. Drain well regions are formed within the well regions. An n-type channel stop resist mask is formed. N-type channel stop regions and n-type surface channel regions are formed. A p-type channel stop resist mask is formed. P-type channel stop regions and p-type surface channel regions are then formed. A dielectric layer is formed over the surface channel regions. Source regions are formed within the well regions. Drain regions are formed within the drain well regions. Back gate regions are formed within the well regions. Top gates are formed on the dielectric layer overlying the surface channel regions.
Field Effect Transistor And Method Of Making
US Patent:
6423991, Jul 23, 2002
Filed:
May 1, 2000
Appl. No.:
09/562604
Inventors:
Phillipe Dupuy - Toulouse, FR
Steven L. Merchant - Phoenix AZ
Robert W. Baird - Mesa AZ
Steven L. Merchant - Phoenix AZ
Robert W. Baird - Mesa AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2710
US Classification:
257207, 257202, 257208
Abstract:
A field effect transistor ( ) has an array of transistors ( ) made up of bonding pads ( ) and sub-arrays of transistors ( ). The bonding pads ( ) are distributed between the sub-arrays of transistors ( ) to reduce the maximum temperature that any portion of the FET ( ) is exposed to while the FET ( ) is in a conducting state. A similar effect can be appreciated by adjusting the threshold voltage or pinch-off resistance of the transistors in a portion ( ) of an array of transistors ( ).
Isolation Trench With Rounded Corners For Bicmos Process
US Patent:
7846789, Dec 7, 2010
Filed:
Oct 16, 2007
Appl. No.:
11/873205
Inventors:
Sameer P. Pendharkar - Allen TX, US
John Lin - Chelmsford MA, US
Philip L. Hower - Concord MA, US
Steven L. Merchant - Amherst NH, US
John Lin - Chelmsford MA, US
Philip L. Hower - Concord MA, US
Steven L. Merchant - Amherst NH, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/8238
US Classification:
438202, 438234, 438294, 438296, 438700, 257E2154, 257E21642, 257E21696
Abstract:
A semiconductor device comprising a first transistor device on or in a semiconductor substrate and a second transistor device on or in the substrate. The device further comprises an insulating trench located between the first transistor device and the second transistor device. At least one upper corner of the insulating trench is a rounded corner in a lateral plane of the substrate.
Distributed High Voltage Jfet
US Patent:
7910417, Mar 22, 2011
Filed:
Jul 21, 2008
Appl. No.:
12/176488
Inventors:
Philip L. Hower - Concord MA, US
David A. Walch - Bedford NH, US
John Lin - Chelmsford MA, US
Steven L. Merchant - Bedford NH, US
David A. Walch - Bedford NH, US
John Lin - Chelmsford MA, US
Steven L. Merchant - Bedford NH, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/337
US Classification:
438186, 438188, 257E21043
Abstract:
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
Field Effect Transistor Having Differing Power Dissipation Across An Array Of Transistors
US Patent:
6603157, Aug 5, 2003
Filed:
Nov 2, 2001
Appl. No.:
10/004517
Inventors:
Phillipe Dupuy - Toulouse, FR
Steven L. Merchant - Phoenix AZ
Robert W. Baird - Mesa AZ
Steven L. Merchant - Phoenix AZ
Robert W. Baird - Mesa AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2710
US Classification:
257202, 257207, 257208
Abstract:
A field effect transistor ( ) has an array of transistors ( ) made up of bonding pads ( ) and sub-arrays of transistors ( ). The bonding pads ( ) are distributed between the sub-arrays of transistors ( ) to reduce the maximum temperature that any portion of the FET ( ) is exposed to while the FET ( ) is in a conducting state. A similar effect can be appreciated by adjusting the threshold voltage or pinch-off resistance of the transistors in a portion ( ) of an array of transistors ( ).
Isolation Trench With Rounded Corners For Bicmos Process
US Patent:
8274131, Sep 25, 2012
Filed:
Dec 7, 2010
Appl. No.:
12/962159
Inventors:
Sameer P. Pendharkar - Allen TX, US
John Lin - Chelmsford MA, US
Philip L. Hower - Concord MA, US
Steven L. Merchant - Amherst NH, US
John Lin - Chelmsford MA, US
Philip L. Hower - Concord MA, US
Steven L. Merchant - Amherst NH, US
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 21/70
US Classification:
257501, 257378, 257E21696
Abstract:
A semiconductor device comprising a first transistor device () on or in a semiconductor substrate () and a second transistor device () on or in the substrate. The device further comprises an insulating trench () located between the first transistor device and the second transistor device. At least one upper corner () of the insulating trench is a rounded corner in a lateral plane () of the substrate.
Semiconductor Device And Method Of Making
US Patent:
6150200, Nov 21, 2000
Filed:
Apr 3, 1998
Appl. No.:
9/055119
Inventors:
Steven L. Merchant - Phoenix AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 21332
H01L 218222
H01L 218222
US Classification:
438133
Abstract:
A semiconductor device (10) is formed in a semiconductor substrate (11) and an epitaxial layer (14). The semiconductor device includes a p-type body region (16), a source region (17), a channel region (19), and a drain region (34) formed in the epitaxial layer (14). A doped region (13) is formed in the semiconductor substrate (11) to reduce the drift resistance of the semiconductor device (10). The drain region (34) is formed from a plurality of doped regions (30-33) that can be formed with high energy implants.
FAQ: Learn more about Steven Merchant
Where does Steven Merchant live?
Leesburg, FL is the place where Steven Merchant currently lives.
How old is Steven Merchant?
Steven Merchant is 32 years old.
What is Steven Merchant date of birth?
Steven Merchant was born on 1992.
What is Steven Merchant's email?
Steven Merchant has such email addresses: me***@peoplepc.com, stevenmerch***@hotmail.com, sentu***@aol.com, steven.merch***@comcast.net. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.
What is Steven Merchant's telephone number?
Steven Merchant's known telephone numbers are: 716-438-9076, 701-838-5099, 860-376-3901, 269-383-4710, 352-638-9215, 410-334-3941. However, these numbers are subject to change and privacy restrictions.
How is Steven Merchant also known?
Steven Merchant is also known as: Stephen M Merchant. This name can be alias, nickname, or other name they have used.
Who is Steven Merchant related to?
Known relatives of Steven Merchant are: Michael Merchant, Steven Merchant, Brandy Merchant, Christine Merchant, Don Slover, Ricky Slover, Vickie Slover. This information is based on available public records.
What are Steven Merchant's alternative names?
Known alternative names for Steven Merchant are: Michael Merchant, Steven Merchant, Brandy Merchant, Christine Merchant, Don Slover, Ricky Slover, Vickie Slover. These can be aliases, maiden names, or nicknames.
What is Steven Merchant's current residential address?
Steven Merchant's current known residential address is: 2936 Tangerine Ct, Leesburg, FL 34748. Please note this is subject to privacy laws and may not be current.
What are the previous addresses of Steven Merchant?
Previous addresses associated with Steven Merchant include: 1761 W Regents Park Rd, Crofton, MD 21114; 5386 Upper Mountain Rd, Lockport, NY 14094; 2606 Vistaview Dr, Lake Dallas, TX 75065; 400 Oak St, Roanoke, TX 76262; 400 Oak Trail Dr, Lewisville, TX 75077. Remember that this information might not be complete or up-to-date.