Scott Robins

In the United States, there are 222 individuals named Scott Robins spread across 47 states, with the largest populations residing in California, Texas, New York.

Public information about Scott Robins

Resumes

Scott Robins

Location:

United States

Commercial Manager U.s. Operations At Wood Group Pressure Control

Position:

Commercial Manager U.S. Operations at Wood Group Pressure Control

Location:

Houston, Texas Area

Industry:

Oil & Energy

Work:

Wood Group Pressure Control
Commercial Manager U.S. Operations

Business Manager, Problem Solver, Entreprenuer

Position:

Family Counselor/Veterinary Relations at Aarrowood Pet Cemetery, Development Consultant at Pyramid Development Services, Independent Representative at National Agents Alliance

Location:

Greater Chicago Area

Industry:

Veterinary

Work:

Aarrowood Pet Cemetery - Vernon Hills, IL since Feb 2013
Family Counselor/Veterinary Relations Pyramid Development Services - Buffalo Grove, IL since Nov 2011
Development Consultant National Agents Alliance - Illinois and Wisconsin since Nov 2011
Independent Representative Scott Robins Edutainment, Inc. (SRE, Inc.) - Grayslake, IL Feb 2008 - Aug 2011
President BH, Inc. dba Britz & Company - Chicago Aug 2005 - Feb 2008
Midwest Sales Manager Aquatic Interiors, Inc. - Grayslake, IL 2001 - Aug 2005
President DBL7, LLC - Chicago and Denver Jan 2002 - Jun 2002
Vice President of Business Development Suburban Surgical Company, Inc. - Wheeling, IL 1997 - Jan 2002
National Sales and Marketing Manager Rainforest Cafe Corporation - Illinois Aug 1995 - Jan 1997
Curator/ Corp. Marine Biologist PETsMART #420 Broadview, IL - Broadview, IL 1994 - 1995
Specialty Manager/ Acting Asst. Manager

Education:

University of Tampa 1980 - 1984
BS Biology/Marine Biology, Biology/Marine Bio/Chem/ Education Maine North High School 1976 - 1980

Interests:

Parrots, Animal Training, Clicker Training, Conservation Education, Birds of Prey Conservation, photography, playing guitar

Scott Robins

Location:

San Francisco Bay Area

Industry:

Semiconductors

Svp Operations Probuild

Position:

SVP Operations at ProBuild

Location:

Greater Denver Area

Industry:

Building Materials

Work:

ProBuild since 2004
SVP Operations

Education:

Weber State University
Bachelor of Arts (B.A.), Finance, General

Nice Way To Celebrate 2 Years. Ct. Tech Council Names Vps A 2011 Company To Watch

Position:

CEO at Virtual Procurement Services (VPS)

Location:

Greater New York City Area

Industry:

Information Technology and Services

Work:

Virtual Procurement Services (VPS) since Sep 2009
CEO Champion Solutions Group 2004 - 2008
District Manager/Senior Client Exec - New England JMT Consulting Group 2003 - 2004
Regional Sales Manager Denver Solutions Group 2001 - 2003
Account Executive Regional Market Radio (Interep) 1999 - 2001
Senior Account Executive RRB. LLC May 1996 - Jan 1999
Operational Partner

Education:

American University 1991 - 1996
Bachelor Of Arts, English

Skills:

Professional Services, Solution Selling, Sales Management, Entrepreneurship, Start-ups, Sales Operations, Management

Interests:

Spending Time with Family, Coaching Youth Soccer/Sports team/camps, Eastern European Literature, Historical Biographies

Honor & Awards:

Multiple President's Clubs

Scott Robins - Lindenhurst, IL

Work:

Aarrowood Pet Cemetery, a division of Stonemor Corp Mar 2013 to 2000
Family Services Counselor/Veterinary Relations Pyramid Development Services Nov 2011 to 2000
Nonprofit Development Consultant IPI Worldwide Photography - Sturtevant, WI Nov 2012 to Dec 2012
Manager for Gurnee Mills Mall Scott Robins Edutainment Inc - Grayslake, IL Feb 2008 to Aug 2011
President BH, Inc - Wheatland, WY Aug 2005 to Feb 2008
DBA Aquatic Interiors, Inc - Grayslake, IL 2001 to 2005
President Aquatic Interiors, Inc - Loveland, CO Jan 2002 to Jun 2002
Vice President of Business Development Suburban Surgical Company Inc 1998 to 1998
National Sales and Marketing Director Rainforest Caf Corporation - Schaumburg, IL Aug 1995 to Jan 1997
Curator/ Corporate Marine Biologist Suburban Surgical Company Inc 1997 to 1997
Distribution Sales Manager Suburban Surgical Company Inc 1997 to 1997
Distributor Account Manager PETsMART Store - Broadview, IL Aug 1994 to Aug 1995
Specialty Manager/ Acting Assistant Manager

Education:

University of Tampa - Tampa, FL
Bachelor of Science in Biology and Marine Biology

Scott Robins - Montgomery Village, MD

Work:

Weststat Oct 2012 to 2000
Data Collector Lash Group Nov 2014 to Jan 2015
Benefit Verification Specialist Capital One Bank - Rockville, MD Oct 2011 to Oct 2013
Relationship Banker M&T Bank - Bethesda, MD Apr 2009 to Oct 2011
Client Services Rep Mercantile Potomac Bank - Bethesda, MD Nov 2003 to Apr 2009
Lead Teller/FSC

Education:

Capital One University - Rockville, MD 2011 to 2013
Sales and Client Services within a diverse and cultural customer base Montgomery College
International Business and Management Retail Banking University
Sales

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Phones & Addresses

Name

Addresses

Phones

Scott A Robins

9058 Parkwood St, Belleville, MI 48111

734-391-7182

Scott A Robins

14805 392Nd St, Sunrise, MN 55056

651-583-2610

Scott E. Robins

Kirkland, WA

425-881-6970

Scott A Robins

14919 392Nd St, Sunrise, MN 55056

651-583-2610

Scott A Robins

108 1/2 Hawthorne Island, Wall Township, NJ 07753

732-776-7174

Scott H. Robins

Stratford, NJ

856-772-0243

Scott A Robins

108 Hawthorne St, Wall Township, NJ 07753

732-776-7174

Scott A Robins

41 Greylock Rdg, Pittsford, NY 14534

585-586-0477

Scott Robins

3945 Foothill Ave, Carlsbad, CA 92010

760-730-1307

Scott Robins

404 Calion St APT B, Jonesboro, AR 72401

Scott Robins

1044 S 950 E APT 39, Provo, UT 84606

Scott Robins

41 Greylock Rdg, Pittsford, NY 14534

585-586-0477

Scott Robins

428 Santa Rosa Rd, Arcadia, CA 91007

Scott Robins

104 Buffalo Dr, Whetstone, AZ 85616

Scott Robins

4 Brady Road Ext, Westboro, MA 01581

Scott Robins

5159 Camden Ave, San Jose, CA 95124

408-221-3190

Business Records

Name / Title

Company / Classification

Phones & Addresses

Scott Robins
President

Scott Robins Construction, Inc.
Child Day Care Services

408 S 152Nd Cir, Omaha, NE 68154

Scott Robins
Executive Officer

Tr Incorporated
Child Day Care Services

Pmb-196 8905 Kingston Pike #12, Knoxville, TN 37918

Scott Robins
COO

Phoenix Manufacturing Co Inc
Coated and Laminated Paper

3655 E Roeser Rd, Phoenix, AZ 85040

Scott Robins
President

Scott Robins Construction, Inc.

408 S 152 Cir, Omaha, NE 68154
402-333-1824, 305-674-0619

Scott A. Robins
President, Owner

SAR DEVELOPMENT, INC
Engineering Services

16 Smith St, Westborough, MA 01581
508-922-9337

Scott Robins
Vice President Technology

T-Ram Semiconductor Incorporated
Semiconductors and Related Devices

620 N Mccarthy Blvd, Milpitas, CA 95035

Scott Robins
Owner

Scott L Robbins Atty
Legal Services Office

607 W Horatio St, Tampa, FL 33606

Scott Robins
President

Midwest Direct Marketing, Inc
Marketing and Advertising · Mailing Lists Management Mailing List Broker Alternative Media & Consulting Services · Mailing Service · Direct Mail Advertising

501 N Webster, Spring Hill, KS 66083
913-686-2220, 913-686-2320

Publications

Us Patents

Thyristor With Lightly-Doped Emitter

US Patent:

6703646, Mar 9, 2004

Filed:

Sep 24, 2002

Appl. No.:

10/253363

Inventors:

Farid Nemati - Menlo Park CA
Scott Robins - San Jose CA
Andrew Horch - Sunnyvale CA

Assignee:

T-Ram, Inc. - Mountain View CA

International Classification:

H01L 2974

US Classification:

257107, 257126, 257132

Abstract:

A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, a base region and an adjacent emitter region of a thyristor are doped such that the emitter region has a lightly-doped portion having a light dopant concentration, relative to the base region. In one embodiment, the thyristor is implemented in a memory circuit, wherein the emitter region is coupled to a reference voltage line and a control port is arranged for capacitively coupling to the thyristor for controlling current flow therein. In another implementation, the thyristor is formed on a buried insulator layer of a silicon-on-insulator (SOI) structure. With these approaches, current flow in the thyristor, e. g. , for data storage therein, can be tightly controlled.

Thyristor-Based Device Including Trench Dielectric Isolation For Thyristor-Body Regions

US Patent:

6727528, Apr 27, 2004

Filed:

Mar 22, 2001

Appl. No.:

09/815213

Inventors:

Scott Robins - San Jose CA
Andrew Horch - Mountain View CA
Farid Nemati - Menlo Park CA
Hyun-Jin Cho - Palo Alto CA

Assignee:

T-RAM, Inc. - San Jose CA

International Classification:

H01L 2974

US Classification:

257133, 257147

Abstract:

A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According to one example embodiment of the present invention, the semiconductor substrate is trenched adjacent a doped or dopable substrate region, which is formed to include at least two vertically-adjacent thyristor regions of different polarity. A capacitively-coupled control port for the thyristor is coupled to at least one of the thyristor regions. The trench also includes a dielectric material for electrically insulating the vertically-adjacent thyristor regions. The thyristor is electrically connected to other circuitry in the device, such as a transistor, and used to form a device, such as a memory cell.

Thyristor-Based Device Having Extended Capacitive Coupling

US Patent:

6583452, Jun 24, 2003

Filed:

Dec 17, 2001

Appl. No.:

10/023060

Inventors:

Hyun-Jin Cho - Palo Alto CA
Andrew Horch - Sunnyvale CA
Scott Robins - San Jose CA
Farid Nemati - Menlo Park CA

Assignee:

T-RAM, Inc. - Mountain View CA

International Classification:

H01L 2974

US Classification:

257107, 257133, 257147

Abstract:

A thyristor-based semiconductor device has a thyristor that exhibits increased capacitive coupling between a conductive structure and a portion of a thyristor. According to an example embodiment of the present invention, the thyristor-based semiconductor device is manufactured having an extended portion that is outside a current path through the thyristor and that capacitively couples a conductive structure to a portion of the thyristor for controlling the current through the path. In one particular implementation, the extended portion extends from a base region of the thyristor and is outside of a current path through the base region and between an adjacent base region and an adjacent emitter region. A gate is formed capacitively coupled to the base region via the extended portion. In this manner, the control of the thyristor with the gate exhibits increased capacitive coupling, as compared to the control without the extended portion.

Carrier Coupler For Thyristor-Based Semiconductor Device

US Patent:

6756612, Jun 29, 2004

Filed:

Oct 28, 2002

Appl. No.:

10/282331

Inventors:

Farid Nemati - Menlo Park CA
Badredin Fatemizadeh - San Jose CA
Andrew Horch - Mountain View CA
Scott Robins - San Jose CA

Assignee:

T-RAM, Inc. - San Jose CA

International Classification:

H01L 2974

US Classification:

257156, 257133, 257155, 257163, 365180

Abstract:

Switching times of a thyristor-based semiconductor device are improved by enhancing carrier drainage from a buried thyristor-emitter region. According to an example embodiment of the present invention, a conductive contact extends to a doped well region buried in a substrate and is adapted to drain carriers therefrom. The device includes a thyristor body having at least one doped emitter region buried in the doped well region. A conductive thyristor control port is adapted to capacitively couple to the thyristor body and to control current flow therein. With this approach, the thyristor can be rapidly switched between resistance states, which has been found to be particularly useful in high-speed data latching implementations including but not limited to memory cell applications.

Method Of Forming Self-Aligned Thin Capacitively-Coupled Thyristor Structure

US Patent:

6767770, Jul 27, 2004

Filed:

Oct 1, 2002

Appl. No.:

10/262770

Inventors:

Andrew Horch - Sunnyvale CA
Scott Robins - San Jose CA
Farid Nemati - Menlo Park CA

Assignee:

T-Ram, Inc. - San Jose CA

International Classification:

H01L 21332

US Classification:

438133, 438135

Abstract:

A semiconductor memory device having a thyristor is manufactured in a manner that makes possible self-alignment of one or more portions of the thyristor. According to an example embodiment of the present invention, a gate is formed over a first portion of doped substrate. The gate is used to mask a portion of the doped substrate and a second portion of the substrate is doped before or after a spacer is formed. After the second portion of the substrate is doped, the spacer is then formed adjacent to the gate and used to mask the second portion of the substrate while a third portion of the substrate is doped. The gate and spacer are thus used to form self-aligned doped portions of the substrate, wherein the first and second portions form base regions and the third portion form an emitter region of a thyristor. In another implementation, the spacer is also adapted to prevent formation of salicide on the portion of the thyristor beneath the spacer, self-aligning the salicide to the junction between the second and third portions. In addition, dimensions such as width and other characteristics of the doped portions that are used to form a thyristor can be controlled without necessarily using a separate mask.

Thyristor-Based Device Over Substrate Surface

US Patent:

6653174, Nov 25, 2003

Filed:

Dec 17, 2001

Appl. No.:

10/023052

Inventors:

Hyun-Jin Cho - Palo Alto CA
Andrew Horch - Mountain View CA
Scott Robins - San Jose CA
Farid Nemati - Menlo Park CA

Assignee:

T-RAM, Inc. - San Jose CA

International Classification:

H01L 21332

US Classification:

438133, 438135, 257133

Abstract:

A semiconductor device having a thyristor is manufactured in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices. According to an example embodiment of the present invention, a thyristor is formed having some or all of the body of the thyristor extending above a substrate surface of a semiconductor device. The semiconductor device includes at least one transistor having source/drain regions formed in the substrate prior to the formation of the thyristor. One or more layers of material are deposited on the substrate surface and used to form a portion of a body of the thyristor that includes anode and cathode end portions. Each end portion is formed having a base region and an emitter region, and at least one of the end portions includes a portion that is in the substrate and electrically coupled to the transistor. A control port is formed capacitively coupled to at least one of the base regions.

Thyristor-Based Device Including Trench Isolation

US Patent:

6777271, Aug 17, 2004

Filed:

Jul 23, 2002

Appl. No.:

10/201654

Inventors:

Scott Robins - San Jose CA
Andrew Horch - Mountain View CA
Farid Nemati - Menlo Park CA
Hyun-Jin Cho - Palo Alto CA

Assignee:

T-Ram, Inc. - San Jose CA

International Classification:

H01L 21332

US Classification:

438138, 438589, 257E21388, 257E21392

Abstract:

A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According to one example embodiment of the present invention, the semiconductor substrate is trenched adjacent a doped or dopable substrate region, which is formed to included at least two vertically-adjacent thyristor regions of different polarity. A capacitively-coupled control port for the thyristor is coupled to at least one of the thyristor regions. The trench also includes a dielectric material for electrically insulating the vertically-adjacent thyristor regions. The thyristor is electrically connected to other circuitry in the device, such as a transistor, and used to form a device, such as a memory cell.

Varied Trench Depth For Thyristor Isolation

US Patent:

6815734, Nov 9, 2004

Filed:

Oct 1, 2002

Appl. No.:

10/262758

Inventors:

Andrew Horch - Sunnyvale CA
Scott Robins - San Jose CA

Assignee:

T-Ram, Inc. - San Jose CA

International Classification:

H01L 2974

US Classification:

257133, 257124

Abstract:

A semiconductor device is formed having a thyristor and trench arranged to electrically insulate an emitter region of the thyristor from another circuit structure. In one example embodiment of the present invention, a trench having a bottom portion with two different trench depths is etched in the substrate. A thyristor is formed having a control port in a trench and having an emitter region adjacent to the trench and below an upper surface of the substrate. A deeper portion of the trench electrically insulates the emitter region from the other circuit structure. The control port is capacitively coupled to the thyristor and to the other circuit structure (e. g. in response to at least one edge of a voltage pulse applied thereto). In one implementation, the trench further includes an emitter-access connector extending from the emitter region to an upper surface of the substrate. These approaches are also useful in high-density circuit applications, such as memory applications, where the semiconductor device is formed in close proximity with other circuitry, such as with other thyristors.

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FAQ: Learn more about Scott Robins

Where does Scott Robins live?

Rockville, MD is the place where Scott Robins currently lives.

How old is Scott Robins?

Scott Robins is 71 years old.

What is Scott Robins date of birth?

Scott Robins was born on 1953.

What is Scott Robins's email?

Scott Robins has such email addresses: scott***@address.com, sctr***@msn.com, scott.rob***@aol.com, srob***@primenet.com, scottlrob***@aol.com, scottrob***@yahoo.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is Scott Robins's telephone number?

Scott Robins's known telephone numbers are: 425-881-6970, 856-772-0243, 301-770-7517, 305-673-8566, 305-674-1634, 408-268-5462. However, these numbers are subject to change and privacy restrictions.

How is Scott Robins also known?

Scott Robins is also known as: Scott Robies, Scott T. These names can be aliases, nicknames, or other names they have used.

Who is Scott Robins related to?

Known relatives of Scott Robins are: Jared Robins, Jessica Robins, Kenneth Robins, Lucille Robins, Nancy Robins, Samuel Robins, Deborah Mcdevitt. This information is based on available public records.

What are Scott Robins's alternative names?

Known alternative names for Scott Robins are: Jared Robins, Jessica Robins, Kenneth Robins, Lucille Robins, Nancy Robins, Samuel Robins, Deborah Mcdevitt. These can be aliases, maiden names, or nicknames.

What is Scott Robins's current residential address?

Scott Robins's current known residential address is: 404 Nina Pl, Rockville, MD 20852. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Scott Robins?

Previous addresses associated with Scott Robins include: 11 Priscilla, Brighton, MA 02135; 16 Smith, Northborough, MA 01532; 16 Smith St, Westborough, MA 01581; 4 Brady Road, Westborough, MA 01581; 6 Prospect, Westborough, MA 01581. Remember that this information might not be complete or up-to-date.

Name Variants	Scotty Robins
Ages	41 to 72
Phones	425-881-6970	856-772-0243	301-770-7517
Addresses	10571 Colorado, Denver, CO 80233	11 Priscilla, Brighton, MA 02135	16 Smith, Northborough, MA 01532
Business records	CEO / Virtual Procurement Services (VPS)	Family Counselor/Veterinary Relations / Aarrowood Pet Cemetery	VP, Associate General Counsel and Corporate Secret... / Sodexo

Scott Robins

What do we know about Scott Robins

Public information about Scott Robins

Resumes

Resumes

Scott Robins

Commercial Manager U.s. Operations At Wood Group Pressure Control

Business Manager, Problem Solver, Entreprenuer

Scott Robins

Svp Operations Probuild

Nice Way To Celebrate 2 Years. Ct. Tech Council Names Vps A 2011 Company To Watch

Scott Robins - Lindenhurst, IL

Scott Robins - Montgomery Village, MD

Phones & Addresses

Business Records

Publications

Us Patents

Thyristor With Lightly-Doped Emitter

Thyristor-Based Device Including Trench Dielectric Isolation For Thyristor-Body Regions

Thyristor-Based Device Having Extended Capacitive Coupling

Carrier Coupler For Thyristor-Based Semiconductor Device

Method Of Forming Self-Aligned Thin Capacitively-Coupled Thyristor Structure

Thyristor-Based Device Over Substrate Surface

Thyristor-Based Device Including Trench Isolation

Varied Trench Depth For Thyristor Isolation

FAQ: Learn more about Scott Robins

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