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Pravin Mistry

In the United States, there are 30 individuals named Pravin Mistry spread across 17 states, with the largest populations residing in California, Michigan, Texas. These Pravin Mistry range in age from 51 to 78 years old. Some potential relatives include Pravin Mistry, Stanley Seloske, James Wilson. You can reach Pravin Mistry through various email addresses, including jmis***@comcast.net, tfiorent***@aol.com, mmis***@yahoo.com. The associated phone number is 631-686-6212, along with 6 other potential numbers in the area codes corresponding to 240, 630, 860. For a comprehensive view, you can access contact details, phone numbers, addresses, emails, social media profiles, arrest records, photos, videos, public records, business records, resumes, CVs, work history, and related names to ensure you have all the information you need.
Last updated Jan 15, 2024
Background search with BeenVerified
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Pravin M Mistry , Age 52
Addison, IL
Also known as:
Pravin C Mistry
Pratixa P Mistry
Pravin Misty
Mistry Pravin
Has lived in:
Addison, IL
Chicago, IL
Bensalem, PA
King of Prussia, PA
Related to:
Natvar Patel, 78
Vina Patel, 71
P Mistry, 44
Rajesh Mistry
Phone number:
630-878-****
215-244-****
PhoneAddress
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Pravin K Mistry , Age 60
Reisterstown, MD
Also known as:
Pravinkumar K Mistry
Pravinkvmar K Mistry
Pravin K Mistery
Has lived in:
Reisterstown, MD
Parkville, MD
Baltimore, MD
Catonsville, MD
Related to:
Prakashbhai Mistry, 67
Ramubhai Mistry, 67
Anila Mistry, 61
Bipin Mistry, 62
Phone number:
410-254-****
240-408-****
PhoneAddress
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Pravin P Mistry , Age 70
Roanoke, VA
Also known as:
Pravin B Mistry
Has lived in:
Roanoke, VA
Salem, VA
Related to:
S Mistry
Sanket Mistry, 40
Sharda Mistry, 69
Robert Goodson, 57
Phone number:
540-563-****
PhoneAddress
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Pravin P Mistry , Age 66
Germantown, MD
Also known as:
Peter Mistry
Pravincha Mistry
Mravin P Mistry
Pravinchandra P Mistry
Has lived in:
Germantown, MD
Berlin, MD
Adelphi, MD
Gaithersburg, MD
Related to:
Tanuja Mistry
Darshana Surti, 69
Joseph Chemmanoor, 82
Roxy Chemmanoor, 48
Phone number:
301-540-****
PhoneAddress
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Pravin K Mistry , Age 68
Walnut Creek, CA
Also known as:
Pravin T Mistry
Pravin E Mistry
Pravin G Mistry
Prabin Mistry
Has lived in:
Walnut Creek, CA
Concord, CA
Pleasant Hill, CA
Altamonte Spg, FL
Related to:
Pravin Mistry, 51
Rheanna Mistry, 31
Serena Mistry, 33
Shivana Mistry, 28
Phone number:
925-934-****
PhoneAddress
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Pravin Mistry , Age 51
Winter Garden, FL
Also known as:
Mahit Mistry
Mayank Mistry
Mohit P Mistry
Mohit M Mistry
Has lived in:
Winter Garden, FL
Van Buren Twp, MI
Collegeville, PA
Kissimmee, FL
Related to:
Leslie Mistry, 53
Pravin Mistry, 68
Sumitraben Mistry, 101
Birti Mistry
PhoneAddress
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Pravin P Mistry , Age 78
Canton, MI
Also known as:
Purnima P Mistry
Previn P Mistry
Parvin P Mistry
Has lived in:
Canton, MI
Houston, TX
Fort Wayne, IN
Fremont, CA
Related to:
Eugene Wilson, 75
James Wilson, 66
Linda Wilson, 75
Pravin Mistry, 68
PhoneAddress
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Pravin B Mistry , Age 68
Fremont, CA
Also known as:
Pravin P Mistry
Pravin T Mistry
Pradip Mistry
Pravin M Famil
Has lived in:
Fremont, CA
Southgate, MI
San Jose, CA
Fremont, MI
Related to:
Parimal Mistry, 64
Ruby Mistry, 41
Tasha Mistry, 34
Alysha Mistry, 31
PhoneAddress
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Pravin M Mistry , Age 60
Huntingburg, IN
Also known as:
Pravinbhai M Mistry
Has lived in:
Huntingburg, IN
East Hazel Crest, IL
Spring, TX
Related to:
Shailesh Mistry, 41
PhoneAddress
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Pravinchandra M Mistry  Deceased
Fern Park, FL
Also known as:
Pravin Mistry
Has lived in:
Fern Park, FL
Casselberry, FL
Venice, FL
Related to:
Shilpa Mistry, 55
Suryakant Mistry, 59
Chintan Mistry, 38
Kumud Desai
PhoneAddress
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Public information about Pravin Mistry

Resumes

Resumes

Quality Engineer

Pravin Mistry Photo 1
Location:
New York, NY
Industry:
Electrical/Electronic Manufacturing
Work:
Motorola
Quality Engineer

Pravin Mistry

Pravin Mistry Photo 2
Location:
Canton, MI
Industry:
Architecture & Planning
Work:
K4 Architecture, Llc. 2004 - 2008
Architectural

Technician Manager At Bank Of America

Pravin Mistry Photo 3
Location:
1640 Van Ness Ave, San Francisco, CA 94109
Industry:
Banking
Work:
Bank of America
Technician Manager at Bank of America
Education:
The University of Manchester 1972 - 1975

Technician Lead

Pravin Mistry Photo 4
Location:
San Francisco, CA
Industry:
Computer Networking
Work:
Cisco
Development Test Engineer Cisco
Technician Lead

Pravin Mistry

Pravin Mistry Photo 5
Location:
South Bend, IN
Industry:
Higher Education
Work:
University of Notre Dame
Production Manager

Quality Manager

Pravin Mistry Photo 6
Location:
Chicago, IL
Industry:
Automotive
Work:
Flexan, Llc
Quality Manager Morse Automotive Corp 1999 - 2008
Qa Manager
Skills:
Continuous Improvement, Supplier Quality, Ppap, Apqp, Six Sigma, Process Improvement, Manufacturing, Ts16949, Kaizen, 5S, Iso/Ts 16949, Lean Manufacturing, Quality System, Root Cause Analysis, Fmea, Product Development

Associate Director

Pravin Mistry Photo 7
Location:
Washington, DC
Industry:
Security And Investigations
Work:
Financial Industry Regulatory Authority (Finra)
Associate Director

Member Of Technician Staff

Pravin Mistry Photo 8
Location:
San Francisco, CA
Industry:
Computer Networking
Work:
Xorp
Member of Technician Staff
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Phones & Addresses

Name
Addresses
Phones
Pravin M Mistry
5149 Warwick Ave, Chicago, IL 60641
773-736-2459
Pravin M Mistry
21931 Michigan Ave, Dearborn, MI 48124
313-551-3947
Pravin C Mistry
306 N Main St, Yreka, CA 96097
Pravin P Mistry
1421 Ranier Blvd, Westland, MI 48187
734-981-0147
Pravin P Mistry
7049 Sadie Ln, Belleville, MI 48111
734-397-6950
Pravin Mistry
12 Hillside Ave, Head Of The Harbor, NY 11780
631-686-6212
Pravin Mistry
3410 Mile Rd, Shelby Township, MI 48316
Pravin P Mistry
1421 Ranier St, Westland, MI 48187
734-981-0147

Publications

Us Patents

Brazing Paste

US Patent:
5964963, Oct 12, 1999
Filed:
Jun 5, 1995
Appl. No.:
8/465266
Inventors:
Manuel C. Turchan - Northville MI
Pravin Mistry - Shelby Township MI
Shengzhong Liu - Canton MI
International Classification:
B23K 3526
US Classification:
148 22
Abstract:
Thermal stresses normally associated with brazing are alleviated by a low temperature brazing technique of the present invention. A low-temperature brazing paste, preferably suitable to be melted at temperatures of no greater than 200. degree. C. (e. g. , 100-200. degree. C. ), containing nanoscale (. ltoreq. 100 nanometer) size particles of gold, cadmium, copper, zinc, tin, lead, silver, silicon, chromium, cobalt, antimony, bismuth, aluminum, iron, magnesium, nitrogen, carbon, boron, and alloys and composites of these materials, is applied as a bead or as a powder spray at the junction of two components desired to be joined together. Energy from a source such as a laser beam (for example a CO. sub. 2 laser, an Nd-Yag laser or an excimer laser), flame, arc, plasma, or the like, is "walked" along the brazing material. The energy beam is sufficient to cause melting and re-crystallization of the nanoscale-particle-containing brazing paste.

Fabrication Of Diamond And Diamond-Like Carbon Coatings

US Patent:
5731046, Mar 24, 1998
Filed:
May 12, 1994
Appl. No.:
8/241930
Inventors:
Pravin Mistry - Shelby Township MI
Manuel C. Turchan - Northville MI
Assignee:
QQC, Inc. - Dearborn MI
International Classification:
B05D 306
C23C 1626
US Classification:
427553
Abstract:
Energy, such as from three different lasers, is directed at the surface of a substrate to mobilize and vaporize a carbon constituent element (e. g. , carbide) within the substrate (e. g. , steel). The vaporized constituent element is reacted by the energy to alter its physical structure (e. g. , from carbon to diamond) to that of a composite material which is diffused back into the substrate as a composite material. An additional secondary element, which also contains carbon, may optionally be directed (e. g. , sprayed) onto the substrate to augment, enhance and/or modify the formation of the composite material, as well as to supply sufficient or additional material for fabricating a diamond or diamond-like coating on the surface of the substrate. The process can be carried out in an ambient environment (e. g. , without a vacuum), and without pre-heating or post-cooling of the substrate.

Diamond Coatings Deposited On Wc-Co Substrate By Multiple Laser

US Patent:
6370165, Apr 9, 2002
Filed:
Jul 20, 1999
Appl. No.:
09/357623
Inventors:
Andrzej R. Badzian - State College PA
Rustum N. Roy - State College PA
Theresa Badzian - State College PA
William R. Drawl - State College PA
Pravin Mistry - Dearborn MI
Manuel C. Turchan - Northville MI
Assignee:
QQC, Inc. - Dearborn MI
International Classification:
H01S 330
US Classification:
372 7, 372 49, 372 75, 372 69
Abstract:
A diamond coating formed on a WCâCo substrate prepared through a process including employing a plasma and a variety of interactions from a multiple laser system demonstrates exceptional adhesion and indicates a durable cubic diamond structure. The coating on the WCâCo substrate is typically between 25 and 40 m thick and has an average crystal size of between 10 and 20 m. Various methods of confirming the cubic diamond structure of the coatings have been employed. The adhesion of the diamond coating to the substrate is very strong. An electron microprobe analysis shows tungsten and cobalt atoms incorporated into the film and a layer depleted in cobalt exists at the diamond-WCâCo interface. Particulates of WCâCoâC alloy are spread over the top surface, apparently formed by condensation from the vapor phase of metal-containing molecules. Carbon is confirmed as being the main component of the surface layer.

Application Of Electron Field Emission From Diamond Grown By A Multiple Pulsed Laser Process

US Patent:
6200183, Mar 13, 2001
Filed:
Jul 20, 1999
Appl. No.:
9/357622
Inventors:
Andrzej R. Badzian - State College PA
Rustum N. Roy - State College PA
Theresa Badzian - State College PA
William R. Drawl - State College PA
Pravin Mistry - Dearborn MI
Manuel C. Turchan - Northville MI
Assignee:
QQC, Inc. - Dearborn MI
International Classification:
H01J 902
US Classification:
445 24
Abstract:
The preparation and use of diamond as an electron emission material is disclosed. Satisfactory measurements were conducted on diamond coatings deposited on WC-Co alloy by a multiple pulsed laser process. The electron emission was measured in a diode configuration with a diamond surface-anode spacing of 20 and 50. mu. m in vacuum at P=10. sup. -7 Torr. Current densities of 6 mA/cm were calculated at an applied of voltage of 3000 V (for 20. mu. m). Analysis proved that electron field emission provided by a diamond grown by a multiple pulsed laser process proved to satisfactorily meet the specified demands.

Method Of Forming A Diamond Coating On A Polymeric Substrate

US Patent:
5643641, Jul 1, 1997
Filed:
Jun 5, 1995
Appl. No.:
8/465583
Inventors:
Manuel C. Turchan - Northville MI
Pravin Mistry - Shelby Township MI
Assignee:
QQC, Inc. - Dearborn MI
International Classification:
C23C 1428
C23C 1648
US Classification:
427595
Abstract:
Energy, such as from one or more lasers, is directed at the surface of a substrate to mobilize and vaporize a constituent element (e. g. , carbide) within the substrate (e. g. , steel). The vaporized constituent element is reacted by the energy to alter its physical structure (e. g. , from carbon to diamond) to that of a composite material which is diffused back into the substrate as a composite material. The method of the present invention includes the additional steps of using the energy to move a carbon constituent element in a sub-surface zone of the substrate towards the surface of the substrate, vaporizing selected amounts of the carbon constituent element to produce a vaporized carbon constituent element, reacting the vaporized carbon constituent element to modify its physical structure and properties, reacting the vaporized carbon constituent element to modify its physical structure and properties, and fabricating the diamond coating from the reacted vaporized carbon constituent element.

Method Of Applying, Sculpting, And Texturing A Coating On A Substrate And For Forming A Heteroepitaxial Coating On A Surface Of A Substrate

US Patent:
5648127, Jul 15, 1997
Filed:
Jun 5, 1995
Appl. No.:
8/465589
Inventors:
Manuel C. Turchan - Northville MI
Pravin Mistry - Shelby Township MI
Assignee:
QQC, Inc. - Dearborn MI
International Classification:
C23C 1644
C08J 718
US Classification:
427596
Abstract:
Energy, such as from one or more lasers, is directed at the surface of a substrate to mobilize and vaporize a constituent element (e. g. , carbide) within the substrate (e. g. , steel). The vaporized constituent element is reacted by the energy to alter its physical structure (e. g. , from carbon to diamond) to that of a composite material which is diffused back into the substrate as a composite material. An additional secondary element, which can be the same as or different from the constituent element, may optionally be directed (e. g. , sprayed) onto the substrate to augment, enhance and/or modify the formation of the composite material, as well as to supply sufficient or additional material for fabricating one or more coatings on the surface of the substrate. The process can be carried out in an ambient environment (e. g. , without a vacuum), and without pre-heating or post-cooling of the substrate.

Formation Of Diamond Materials By Rapid-Heating And Rapid-Quenching Of Carbon-Containing Materials

US Patent:
5516500, May 14, 1996
Filed:
Aug 9, 1994
Appl. No.:
8/287726
Inventors:
Shengzhong Liu - Dearborn Heights MI
Pravin Mistry - Shelby Township MI
Assignee:
QQC, Inc. - Dearborn MI
International Classification:
C30B 2904
US Classification:
423446
Abstract:
Diamond materials are formed by sandwiching a carbon-containing material in a gap between two electrodes. A high-amperage electric current is applied between the two electrode plates so as cause rapid-heating of the carbon-containing material. The current is sufficient to cause heating of the carbon-containing material at a rate of at least approximately 5,000. degree. C. /sec, and need only be applied for a fraction of a second to elevate the temperature of the carbon-containing material at least approximately 1000. degree. C. Upon terminating the current, the carbon-containing material is subjected to rapid-quenching (cooling). This may take the form of placing one or more of the electrodes in contact with a heat sink, such as a large steel table. The carbon-containing material may be rapidly-heated and rapidly-quenched (RHRQ) repeatedly (e. g. , in cycles), until a diamond material is fabricated from the carbon-containing material.

Methods Of Joining Metal Components And Resulting Articles Particularly Automotive Torque Converter Assemblies

US Patent:
5902498, May 11, 1999
Filed:
Mar 24, 1997
Appl. No.:
8/822829
Inventors:
Pravin Mistry - Shelby Township MI
Shengzhong Liu - Canton MI
Manuel C. Turchan - Northville MI
Assignee:
QQC, Inc. - Dearborn MI
International Classification:
B23K26/10;23/00
US Classification:
21912164
Abstract:
Thermal stresses normally associated with joining are alleviated by a low temperature joining technique of the present invention. A low-temperature joining material is applied (as a paste, or as a powder spray, or as a tape, or as a paint, or as a putty) at the junction of two components desired to be joined together. Energy from a source such as a laser beam (for example an Nd:YAG or a CO. sub. 2 laser) or by a flame, arc, plasma, or the like, is either "walked" along the joining material to react the entire amount of joining material, or the joining material is self-sustaining and simply requires igniting a selected portion of the joining material by the energy source. In an exemplary application of the process, vanes are brazed to the bowl and/or to the shroud of an automatic transmission bowl (impeller or turbine) assembly, preferably using the low-temperature joining material. Systems for delivering the joining material and the energy are described. The fabrication of hollow vanes is described.

FAQ: Learn more about Pravin Mistry

Who is Pravin Mistry related to?

Known relatives of Pravin Mistry are: Manisha Patel, Natvar Patel, Vina Patel, P Mistry, Rajesh Mistry, Ramiben Mistry. This information is based on available public records.

What are Pravin Mistry's alternative names?

Known alternative names for Pravin Mistry are: Manisha Patel, Natvar Patel, Vina Patel, P Mistry, Rajesh Mistry, Ramiben Mistry. These can be aliases, maiden names, or nicknames.

What is Pravin Mistry's current residential address?

Pravin Mistry's current known residential address is: 530 N 6Th Ave, Addison, IL 60101. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Pravin Mistry?

Previous addresses associated with Pravin Mistry include: 12 Hillside Ave, Saint James, NY 11780; 303 Nicodemus Rd, Reisterstown, MD 21136; 530 N 6Th Ave, Addison, IL 60101; 15 Tom Ave, Groton, CT 06340; 876 Timberland Trl, Altamonte Springs, FL 32714. Remember that this information might not be complete or up-to-date.

Where does Pravin Mistry live?

Addison, IL is the place where Pravin Mistry currently lives.

How old is Pravin Mistry?

Pravin Mistry is 52 years old.

What is Pravin Mistry date of birth?

Pravin Mistry was born on 1972.

What is Pravin Mistry's email?

Pravin Mistry has such email addresses: jmis***@comcast.net, tfiorent***@aol.com, mmis***@yahoo.com, mohitm***@aol.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is Pravin Mistry's telephone number?

Pravin Mistry's known telephone numbers are: 631-686-6212, 240-408-1526, 630-878-9360, 860-405-1740, 574-243-8666, 215-244-1735. However, these numbers are subject to change and privacy restrictions.

How is Pravin Mistry also known?

Pravin Mistry is also known as: Pravin C Mistry, Pratixa P Mistry, Pravin Misty, Mistry Pravin, Mistry Bravin, Y Pravin, Cmtry N Pravin. These names can be aliases, nicknames, or other names they have used.

Possible Relatives

A Mistry Cyrus Mistry D Mistry Daxaben Mistry Deepak Mistry Darsha Mistry Darshan Mistry Pravin Kumar Pravin Modi Pravin Nair Pravin Pate Pravin Singh Pravin Patel Pravin Prasad

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