Kevin Fairbairn
In the United States, there are 14 individuals named Kevin Fairbairn spread across 19 states, with the largest populations residing in California, Illinois, New York.
Last updated 2024-01-24
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Kevin T Fairbairn , Age 55
Oklahoma City, OK
- Has lived in:
- Oklahoma City, OK
- Santa Teresa, NM
- El Paso, TX
- Drummond, OK
- Related to:
- Jeffery Fairbairn, 57
- Nathaniel Fairbairn, 29
- Theresa Fairbairn, 63
- Carie Fairbairn
- Phone number:
- 405-623-****
Kevin J Fairbairn , Age 39
Hudson, NY
- Has lived in:
- Hudson, NY
- Claverack, NY
- 29 Palms, CA
- Aptos, CA
- Related to:
- Elizabeth Meaney
- Jason Meaney
- Joseph Meaney
- Lisa Meaney, 63
- Phone number:
- 518-851-****
Kevin C Fairbairn , Age 35
Chicago, IL
- Also known as:
- Kevin Fairbairn
- Kevin J Fairbairn
- Has lived in:
- Chicago, IL
- Lake Zurich, IL
- Related to:
- James Fairbairn
- Janet Fairbairn, 72
- Rhoda Fairbairn, 94
- Craig Fairbairn, 73
Kevin P Fairbairn , Age 70
Los Gatos, CA
- Also known as:
- Fairbairn Fairbairn
- Kevin Sairbairn
- Kevin P Faibairn
- Kevin P Fairbaim
- Has lived in:
- Los Gatos, CA
- Santa Clara, CA
- San Jose, CA
- Cupertino, CA
- Related to:
- Leah Fairbairn, 38
- Matthew Fairbairn
- Patricia Fairbairn, 68
- Rachael Fairbairn, 40
- Phone number:
- 408-930-****
Kevin J Fairbairn , Age 59
Sidney, MT
- Has lived in:
- Sidney, MT
- Houston, TX
- Related to:
- Elsie Ralls, 112
- John Ralls, 83
- Deena Fairbairn, 62
- Phone number:
- 406-433-****
- 406-899-****
Kevin J Fairbairn , Age 57
Menands, NY
- Also known as:
- Kevin Fairbairn
- Kevin L Fairbairn
- K Fairbairn
- Kevin R
- Has lived in:
- Menands, NY
- Schenectady, NY
- Selkirk, NY
- Albany, NY
- Related to:
- I Fairbairn
- Leedward Fairbairn
- Maggie Fairbairn
- Makenzie Fairbairn
- Phone number:
- 518-593-****
Kevin B Fairbairn , Age 36
Newton, MA
- Also known as:
- Kevin Boyce Fairbairn
- Has lived in:
- Newton, MA
- Williamsburg, VA
- Bowling Green, OH
- Related to:
- Jerene Beyer, 67
- Karen Beyer, 50
- Russell Beyer, 69
- Wyatt Beyer, 40
- Phone number:
- 757-220-****
Kevin A Fairbairn , Age 43
Mount Vernon, NY
- Also known as:
- Kevin Fairbarin
- Kevin Fairburn
- Has lived in:
- Mount Vernon, NY
- Bronx, NY
- Related to:
- Jason Benjamin, 47
- Jayda Fairbairn
- Marvin Fairbairn, 44
- Chinel Fairbairn, 40
Kevin E Fairbairn , Age 42
Seattle, WA
- Has lived in:
- Seattle, WA
- Portland, OR
- Santa Cruz, CA
- San Francisco, CA
Minot, ND
- Has lived in:
- Minot, ND
- Baldwin, WI
- Related to:
- Ione Steinauer, 114
- John Steinauer, 68
- William Steinauer, 70
- Barbara Steinauer, 92
Public information about Kevin Fairbairn
Phones & Addresses
Name
Addresses
Phones
Kevin Fairbairn
Kevin Fairbairn
Kevin Fairbairn
Kevin T Fairbairn
Kevin Fairbairn
Publications
Us Patents
Tandem Process Chamber
US Patent:
6635115, Oct 21, 2003
Filed:
May 19, 2000
Appl. No.:
09/575025
Inventors:
Kevin Fairbairn - Saratoga CA
Jessica Barzilai - Mountain View CA
Hari K. Ponnekanti - Santa Clara CA
Jessica Barzilai - Mountain View CA
Hari K. Ponnekanti - Santa Clara CA
Assignee:
Applied Materials Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118719, 118715, 1563451, 15634531, 15634534, 15634551, 15634552, 15634554
Abstract:
The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
Method Of Depositing An Amorphous Carbon Layer
US Patent:
6841341, Jan 11, 2005
Filed:
Dec 17, 2002
Appl. No.:
10/322228
Inventors:
Kevin Fairbairn - Los Gatos CA, US
Michael Rice - Pleasanton CA, US
Timothy Weidman - Sunnyvale CA, US
Christopher S Ngai - Burlingame CA, US
Ian Scot Latchford - Sunnyvale CA, US
Christopher Dennis Bencher - Sunnyvale CA, US
Yuxiang May Wang - San Jose CA, US
Michael Rice - Pleasanton CA, US
Timothy Weidman - Sunnyvale CA, US
Christopher S Ngai - Burlingame CA, US
Ian Scot Latchford - Sunnyvale CA, US
Christopher Dennis Bencher - Sunnyvale CA, US
Yuxiang May Wang - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G03F 700
US Classification:
430323, 430311, 430314, 430315, 430317, 430322, 430324
Abstract:
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
Heated Electrostatic Particle Trap For In-Situ Vacuum Line Cleaning Of A Substrated Processing
US Patent:
6354241, Mar 12, 2002
Filed:
Jul 15, 1999
Appl. No.:
09/354925
Inventors:
Tsutomu Tanaka - Santa Clara CA
Chau Nguyen - San Jose CA
Hari Ponnekanti - Santa Clara CA
Kevin Fairbairn - Saratoga CA
Mark Fodor - Los Gatos CA
Chau Nguyen - San Jose CA
Hari Ponnekanti - Santa Clara CA
Kevin Fairbairn - Saratoga CA
Mark Fodor - Los Gatos CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118723E, 118715
Abstract:
An apparatus and method for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor-processing device. The apparatus includes a vessel chamber having an inlet, an outlet and a fluid conduit between the two that fluidly couples the outlet with the inlet. The fluid conduit includes first and second collection sections. The first collection section includes a first plurality of electrodes aligned parallel to a first plane and the second collection section includes a second plurality of electrodes aligned parallel to a second plane that is substantially perpendicular to the first plane. The electrodes are connected to a voltage differential to form an electrostatic particle collector that traps electrically charged particles and particulate matter flowing through the fluid conduit. Particles are collected on the electrodes within the fluid conduit during substrate processing operations such as CVD deposition steps. Then, during a chamber clean operation, unreacted etchant gases used to clean the substrate processing chamber are exhausted through the foreline and into the apparatus of the present invention where they react with the collected particles and powder to convert the solid material into gaseous matter that can be pumped through the foreline without damaging the vacuum pump or other processing equipment.
Method Of Depositing An Amorphous Carbon Layer
US Patent:
7223526, May 29, 2007
Filed:
Dec 21, 2004
Appl. No.:
11/019860
Inventors:
Kevin Fairbairn - Los Gatos CA, US
Michael Rice - Pleasanton CA, US
Timothy Weidman - Sunnyvale CA, US
Christopher S Ngai - Burlingame CA, US
Ian Scot Latchford - Sunnyvale CA, US
Christopher Dennis Bencher - Sunnyvale CA, US
Yuxiang May Wang - San Jose CA, US
Michael Rice - Pleasanton CA, US
Timothy Weidman - Sunnyvale CA, US
Christopher S Ngai - Burlingame CA, US
Ian Scot Latchford - Sunnyvale CA, US
Christopher Dennis Bencher - Sunnyvale CA, US
Yuxiang May Wang - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G03F 7/00
US Classification:
430322, 430311, 430314, 430315, 430317, 430324
Abstract:
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
Method Of Depositing An Amorphous Carbon Layer
US Patent:
7335462, Feb 26, 2008
Filed:
Feb 9, 2007
Appl. No.:
11/673177
Inventors:
Kevin Fairbairn - Los Gatos CA, US
Michael Rice - Pleasanton CA, US
Timothy Weidman - Sunnyvale CA, US
Christopher S Ngai - Burlingame CA, US
Ian Scot Latchford - Sunnyvale CA, US
Christopher Dennis Bencher - Sunnyvale CA, US
Yuxiang May Wang - San Jose CA, US
Michael Rice - Pleasanton CA, US
Timothy Weidman - Sunnyvale CA, US
Christopher S Ngai - Burlingame CA, US
Ian Scot Latchford - Sunnyvale CA, US
Christopher Dennis Bencher - Sunnyvale CA, US
Yuxiang May Wang - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
G03F 7/00
US Classification:
430311, 430313, 430314, 430323, 430315, 430317, 430322, 430324
Abstract:
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
Mixed Frequency Cvd Process
US Patent:
6358573, Mar 19, 2002
Filed:
Jun 2, 2000
Appl. No.:
09/585258
Inventors:
Mandar Mudholkar - Fremont CA
William N. Taylor - Dublin CA
Mark Fodor - Los Gatos CA
Judy Huang - Los Gatos CA
David Silvetti - Morgan Hill CA
David Cheung - Foster City CA
Kevin Fairbairn - Saratoga CA
William N. Taylor - Dublin CA
Mark Fodor - Los Gatos CA
Judy Huang - Los Gatos CA
David Silvetti - Morgan Hill CA
David Cheung - Foster City CA
Kevin Fairbairn - Saratoga CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 124
US Classification:
427578, 42725528, 427294, 427595
Abstract:
A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
Tandem Process Chamber
US Patent:
7655092, Feb 2, 2010
Filed:
Oct 6, 2003
Appl. No.:
10/680656
Inventors:
Kevin Fairbairn - Saratoga CA, US
Jessica Barzilai - Mountain View CA, US
Hari K. Ponnekanti - Santa Clara CA, US
Jessica Barzilai - Mountain View CA, US
Hari K. Ponnekanti - Santa Clara CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
H01L 21/00
H01L 21/00
US Classification:
118719, 15634522
Abstract:
The present invention provides an apparatus for vacuum processing generally comprising an enclosure having a plurality of isolated chambers formed therein, a gas distribution assembly disposed in each processing chamber, a gas source connected to the plurality of isolated chambers, and a power supply connected to each gas distribution assembly.
Evaporative System For Solar Cell Fabrication
US Patent:
8087380, Jan 3, 2012
Filed:
Oct 30, 2009
Appl. No.:
12/610187
Inventors:
Terry Bluck - Santa Clara CA, US
Michael S. Barnes - San Ramon CA, US
Kevin P. Fairbairn - Los Gatos CA, US
Michael S. Barnes - San Ramon CA, US
Kevin P. Fairbairn - Los Gatos CA, US
Assignee:
Intevac, Inc. - Santa Clara CA
International Classification:
C23C 14/34
US Classification:
118723VE, 438679, 438908
Abstract:
A plurality of chamber are arranged about a transport chamber. The linear transport chamber may include a linear track supporting robot arms. The robot arms transport substrates to and from the chambers. Each chamber includes a plurality of evaporators, each controlled independently. Each substrate positioned in the chamber is coated from a plurality of the evaporators, such that by controlling the operation of each evaporator independently the formation of the layers and the concentration gradient of each layer can be precisely controlled.
FAQ: Learn more about Kevin Fairbairn
Who is Kevin Fairbairn related to?
Known relatives of Kevin Fairbairn are: Randy Davis, Faith Fairbairn, Jeffery Fairbairn, Nathaniel Fairbairn, Theresa Fairbairn, Carie Fairbairn, Fairbairn Frede. This information is based on available public records.
What is Kevin Fairbairn's current residential address?
Kevin Fairbairn's current known residential address is: 6600 Saddleback Dr, Oklahoma City, OK 73150. Please note this is subject to privacy laws and may not be current.
What are the previous addresses of Kevin Fairbairn?
Previous addresses associated with Kevin Fairbairn include: 133 Jordans Journey, Williamsburg, VA 23185; 141 Miller St Ne Apt 6, Sidney, MT 59270; 26 Snowden Ave, Schenectady, NY 12304; 6600 Saddleback Dr, Oklahoma City, OK 73150; 2660 Ashland, Chicago, IL 60614. Remember that this information might not be complete or up-to-date.
Where does Kevin Fairbairn live?
Oklahoma City, OK is the place where Kevin Fairbairn currently lives.
How old is Kevin Fairbairn?
Kevin Fairbairn is 55 years old.
What is Kevin Fairbairn date of birth?
Kevin Fairbairn was born on 1969.
What is Kevin Fairbairn's email?
Kevin Fairbairn has email address: kevin.fairba***@gmail.com. Note that the accuracy of this email may vary and this is subject to privacy laws and restrictions.
What is Kevin Fairbairn's telephone number?
Kevin Fairbairn's known telephone numbers are: 406-433-2563, 757-220-2848, 406-899-6734, 518-593-4937, 405-623-6218, 518-767-9837. However, these numbers are subject to change and privacy restrictions.
Who is Kevin Fairbairn related to?
Known relatives of Kevin Fairbairn are: Randy Davis, Faith Fairbairn, Jeffery Fairbairn, Nathaniel Fairbairn, Theresa Fairbairn, Carie Fairbairn, Fairbairn Frede. This information is based on available public records.