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John Batey

In the United States, there are 155 individuals named John Batey spread across 38 states, with the largest populations residing in Tennessee, Texas, Florida. These John Batey range in age from 40 to 87 years old. Some potential relatives include Danny Whitt, David Tuggle, Darla Whitt. You can reach John Batey through various email addresses, including john.ba***@mail.com, johnb3***@hotmail.com, j.ba***@att.net. The associated phone number is 405-912-2336, along with 6 other potential numbers in the area codes corresponding to 419, 479, 573. For a comprehensive view, you can access contact details, phone numbers, addresses, emails, social media profiles, arrest records, photos, videos, public records, business records, resumes, CVs, work history, and related names to ensure you have all the information you need.

Public information about John Batey

Resumes

Resumes

Warrant Officer

John Batey Photo 1
Location:
Marion, TX
Industry:
Law Enforcement
Work:
Clean Slate Pursuit
Warrant Officer
Skills:
Law Enforcement, Criminal Investigations, Firearms, Public Safety, Emergency Management, Crime Prevention, Microsoft Office, Patrol, Investigation, Evidence, Customer Service, Physical Security, Surveillance

President

John Batey Photo 2
Location:
Easton, CT
Industry:
Information Technology And Services
Work:
Erc
President

Executive Advisor

John Batey Photo 3
Location:
San Francisco, CA
Industry:
Executive Office
Work:
Flextech Alliance 2008 - Mar 2016
Member, Board of Directors Invis Technologies Corporation Dec 2013 - Nov 2015
Co-Founder and Chief Executive Officer Consulting Services Dec 2013 - Nov 2015
Executive Advisor Qualcomm Mems Technologies Oct 2004 - Apr 2011
President Iridigm Display Corporation Feb 2001 - Oct 2004
Chief Operating Officer Dpix Jan 1995 - Feb 2001
Senior Vice President and Corporate Officer Ibm Jun 1989 - Jan 1995
Manager Ibm Oct 1983 - May 1989
Research Staff Member
Education:
Durham University 1980 - 1983
Doctorates, Doctor of Philosophy, Applied Physics Durham University 1977 - 1980
Bachelors, Bachelor of Science, Applied Physics, Electronics
Skills:
Semiconductors, Cross Functional Team Leadership, Management, Start Ups, Product Development, Strategy, Strategic Partnerships, Product Management, Program Management, R&D

Substitute Teacher

John Batey Photo 4
Location:
Bakersfield, CA
Industry:
Education Management
Work:
Kern High School District
Substitute Teacher Mission Bank Corp
Credit Analyst Head To Toes Healthy Habits Summer Camp
Founder, Director Kern High School District
Teacher
Education:
Keck School of Medicine of the University of Southern California 2016 - 2018
Masters, Education, Public Health Uc Santa Barbara 2011 - 2016
Bachelors, Biology Uc Santa Barbara 2011 - 2015
Skills:
Customer Service, Microsoft Office, Microsoft Excel, Microsoft Powerpoint, Microsoft Word, Leadership, Social Media, Time Management, Teamwork

Director Of Maintenance Operations

John Batey Photo 5
Location:
Fayetteville, AR
Industry:
Building Materials
Work:
White River Hardwoods ~Woodworks, Inc
Director of Maintenance Operations Kutting Edge Machine Shop Oct 1998 - Oct 2004
Director of Design and Developement
Education:
California State University, Fresno 1995 - 1998
Bachelors, Mechanical Engineering California Miramar University 1979 - 1984
Bachelor of Science In Mechanical Engineering, Bachelors, Mechanical Engineering California State University, Chico

Engineering Specialist

John Batey Photo 6
Location:
Collegeville, PA
Industry:
Transportation/Trucking/Railroad
Work:
Stv
Engineering Specialist Nj Transit Apr 2011 - Dec 2012
Ptc Project Manager Nj Transit May 2007 - Apr 2011
Equipment Engineering Project Manager Stv Mar 2001 - Apr 2007
Vehicle Specialist
Education:
Drexel University 1998 - 2003
Bachelors, Bachelor of Science, Mechanical Engineering La Salle University
Skills:
Rail, Project Engineering, Project Planning, Railway, Transportation, Commissioning, Rolling Stock, Program Management, Testing, Public Transport, Project Management, Railway Systems, Systems Engineering, Procurement, Contract Negotiation, Signalling, Manufacturing, Light Rail, Integration, Operations Management, Troubleshooting, Ms Project, Logistics, Management, Continuous Improvement, Transportation Engineering, Inspection, System Design, Electrical Engineering, Mechanical Engineering, System Safety, Software Documentation, Feasibility Studies, Primavera P6, Construction Management, Electricians, Process Scheduler, Specifications, Proposal Writing, Autocad, Cad, Microsoft Project, Maintenance Management, Locomotive, Fleet Management, Six Sigma, Root Cause Analysis, Supervisory Skills, Railway Signalling, Maintenance and Repair

Global Contract Security

John Batey Photo 7
Location:
Washington, DC
Industry:
Security And Investigations
Work:
Internations Fugitive Retreval
Global Contract Security

President

John Batey Photo 8
Location:
46 Hemlock Rd, Bourne, MA 02532
Industry:
Legal Services
Work:
Energy Research Center
President
Skills:
Analysis, Product Development
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Business Records

Name / Title
Company / Classification
Phones & Addresses
John Batey
Principal
Jamison Downs Homeowners Assoc
Civic/Social Association
5104 Baker Rd, Murfreesboro, TN 37129
John Batey
Principal
J M Property Maintenance
Building Maintenance Services
408 E Saint Eunice Rd, Hams Prairie, MO 65251
Mr John Batey
Batey Construction
Home Builders
196 Old Shackle Island Rd, Hendersonville, TN 37075
615-824-8332
John Batey
Mortgage Broker
Batey
196 Old Shackle Is Rd, Hendersonville, TN 37077
615-824-8332
John Batey
Executive Officer
Durham Realty & Auction Co.
404A Northfield Rd, Bedford, OH 44146
615-896-2917
John E. Batey
President
Energy Research Center Inc
Legal Services · Engineering Services
35 Fawn Rd, Easton, CT 06612
John E Batey, Easton, CT 06612
203-459-0353
John Batey
Svp; President, Qualcomm Mems Technologies
Qualcomm Incorporated
Mfg Semiconductors/Related Devices Prepackaged Software Services
9393 Waples St, San Diego, CA 92121
858-587-1121
John Batey
BATEY REALTORS
Real Estate Agents
196 Old Shackle Is Rd, Hendersonville, TN 37075
615-824-0453, 615-824-8332

Publications

Us Patents

Controlling Electromechanical Behavior Of Structures Within A Microelectromechanical Systems Device

US Patent:
8278726, Oct 2, 2012
Filed:
Aug 23, 2010
Appl. No.:
12/861778
Inventors:
Mark W. Miles - Atlanta GA, US
John Batey - San Jose CA, US
Clarence Chui - San Jose CA, US
Manish Kothari - San Jose CA, US
Assignee:
QUALCOMM MEMS Technologies, Inc. - San Diego CA
International Classification:
H01L 29/84
US Classification:
257415, 257414, 257417, 257419, 257E29324, 310324, 310330
Abstract:
In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.

Electromechanical Devices Having Etch Barrier Layers

US Patent:
8368124, Feb 5, 2013
Filed:
Jun 22, 2009
Appl. No.:
12/489250
Inventors:
Mark W. Miles - Atlanta GA, US
John Batey - Cupertino CA, US
Clarence Chui - San Jose CA, US
Manish Kothari - Cupertino CA, US
Assignee:
QUALCOMM MEMS Technologies, Inc. - San Diego CA
International Classification:
H01L 27/20
H01L 29/84
US Classification:
257254, 257E27006
Abstract:
In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the micro electromechanical systems device.

Passivation Of Copper With Ammonia-Free Silicon Nitride And Application To Tft/Lcd

US Patent:
6420282, Jul 16, 2002
Filed:
Sep 8, 2000
Appl. No.:
09/658181
Inventors:
John Batey - Redwood City CA
Peter M. Fryer - Yorktown Heights NY
Jun Hyung Souk - Seoul, KE
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2126
US Classification:
438792, 438664, 438680, 438682
Abstract:
A method for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display and a method of constructing the same, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper,aluminum, or other refractory metal gate and the gate insulator. Further,. the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The layer is made in a plasma-enhanced chemical vapor deposition process wherein the gas mixture comprises one part silane to 135 parts nitrogen to 100 parts helium and 100 parts hydrogen. A structure, and a process for forming the structure, for providing stable and low-resistance electrical contact between copper,aluminum, or another refractory metal gate lines and a metallization layer of aluminum and/or molybdenum, includes using a conductive material, such as an indium tin oxide bridge.

Unpinned Oxide-Compound Semiconductor Structures And Method Of Forming Same

US Patent:
5086321, Feb 4, 1992
Filed:
Oct 4, 1990
Appl. No.:
7/592611
Inventors:
John Batey - Danbury CT
Sandip Tiwari - Ossining NY
Steven L. Wright - Peekskill NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2920
H01L 29161
H01L 2934
US Classification:
357 232
Abstract:
Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO. sub. 2. A metal gate is deposited on the SiO. sub. 2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap.

Passivation Of Copper With Ammonia-Free Silicon Nitride And Application To Tft/Lcd

US Patent:
5831283, Nov 3, 1998
Filed:
Apr 22, 1996
Appl. No.:
8/636106
Inventors:
John Batey - Redwood City CA
Peter M. Fryer - Yorktown Heights NY
Jun Hyung Souk - Seoul, KR
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2904
H01L 31036
US Classification:
257 66
Abstract:
A layer for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper, aluminum, or other refractory metal gate and the gate insulator. Further, the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The structure provides stable and low-resistance electrical contact between copper, aluminum, or another refractory metal gate lines and a metallization layer of aluminum and/or molybdenum, includes using a conductive material, such as an indium tin oxide bridge. A metallization layer of the device is connected to the conductive material through a via hole extending to that portion of the conductive material which is not covered by the copper, aluminum, or another refractory metal.

Transistor Having Ammonia Free Nitride Between Its Gate Electrode And Gate Insulation Layers

US Patent:
6545295, Apr 8, 2003
Filed:
May 2, 2002
Appl. No.:
10/137923
Inventors:
John Batey - Redwood City CA
Peter M. Fryer - Yorktown Heights NY
Jun Hyung Souk - Seoul, KR
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2900
US Classification:
257 72, 257 59, 257347, 257762, 257649, 257350
Abstract:
A thin film transistor and a liquid crystal display panel are provided. These devices include a layer of ammonia-free silicon nitride formed between the gate and the gate insulator of the device.

Boiler Optimization For Multiple Boiler Heating Plants

US Patent:
4864972, Sep 12, 1989
Filed:
Jun 8, 1987
Appl. No.:
7/059542
Inventors:
John E. Batey - New Canaan CT
Edward H. Brzezowski - Succasunna NJ
International Classification:
F22B 3742
US Classification:
122448B
Abstract:
A method and apparatus is provided for operation and optimization of boilers in a multiboiler heating plant. The apparatus includes a boiler selection means which is typically a computer which includes a fuel consumption profile for the boilers in the plant. A boiler controller is connected to the boiler selection means. An outdoor air temperature sensor is provided. In operation the fuel consumption profile of the various boilders at the current outdoor air temperature are compared and the boiler which will consume the least amount of fuel per degree day or other time unit is selected for operation.

Pulsed Gas Plasma-Enhanced Chemical Vapor Deposition Of Silicon

US Patent:
5242530, Sep 7, 1993
Filed:
Aug 5, 1991
Appl. No.:
7/740759
Inventors:
John Batey - Danbury CT
John J. Boland - Stormville NY
Gregory N. Parsons - Tarrytown NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C30B 2506
US Classification:
156613
Abstract:
A substrate having silicon receptive surface areas is maintained in a plasma enhanced chemical vapor deposition (PECVD) chamber at a temperature, and under sufficient gas flow, pressure and applied energy conditions to form a gas plasma. The gas plasma is typically made up of hydrogen, but may be made up of mixtures of hydrogen with other gasses. A discontinuous flow of silane gas of predetermined duration and predetermined time spacing is introduced to produce at least one timed pulse of silane gas containing plasma, whereby a thin layer of silicon is deposited on the receptive areas of the substrate. The thin layer of silicon is exposed to the hydrogen gas plasma between the brief deposition time cycles and may result in the modification of the silicon layer by the hydrogen plasma. The surface modification may include at least one of etching, surface hydrogenation, surface bond reconstruction, bond strain relaxation, and crystallization, and serves the purpose of improving the silicon film for use in, for example, electronic devices. Repeated time pulses of silane gas and subsequent hydrogen plasma exposure cycles can result in selective deposition of silicon on predetermined receptive areas of a patterned substrate.

FAQ: Learn more about John Batey

Who is John Batey related to?

Known relatives of John Batey are: James Wright, Ann Byrd, C Jepsen, John Batey, Charles Batey, Erin Cotham, Dennis Hovind. This information is based on available public records.

What are John Batey's alternative names?

Known alternative names for John Batey are: James Wright, Ann Byrd, C Jepsen, John Batey, Charles Batey, Erin Cotham, Dennis Hovind. These can be aliases, maiden names, or nicknames.

What is John Batey's current residential address?

John Batey's current known residential address is: 654 Cumberland Hills Dr, Hendersonvlle, TN 37075. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of John Batey?

Previous addresses associated with John Batey include: 2455 Sunnydale, Temperance, MI 48182; 1086 Susie Sandhill Rd, Elizabethtown, NC 28337; 842 Mambrino Rd, Oregon, OH 43616; 1316 Farrell Ter, Farrell, PA 16121; 7113 26Th, Kenosha, WI 53143. Remember that this information might not be complete or up-to-date.

Where does John Batey live?

Hendersonville, TN is the place where John Batey currently lives.

How old is John Batey?

John Batey is 63 years old.

What is John Batey date of birth?

John Batey was born on 1960.

What is John Batey's email?

John Batey has such email addresses: john.ba***@mail.com, johnb3***@hotmail.com, j.ba***@att.net, jeba***@att.net, john.ba***@hotmail.com, jmba***@bellsouth.net. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is John Batey's telephone number?

John Batey's known telephone numbers are: 405-912-2336, 419-697-8188, 479-445-6575, 573-642-8066, 573-642-9759, 615-730-7377. However, these numbers are subject to change and privacy restrictions.

How is John Batey also known?

John Batey is also known as: John Baley, John M Bat, John M Mcginness, John M Beatty, John M Ba, Nm B Joh. These names can be aliases, nicknames, or other names they have used.

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