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Hongbin Zhu

In the United States, there are 15 individuals named Hongbin Zhu spread across 17 states, with the largest populations residing in California, New York, Missouri. These Hongbin Zhu range in age from 22 to 65 years old. Some potential relatives include Haowei Hu, Cynthia Cheng, Jing Xheng. You can reach Hongbin Zhu through various email addresses, including hongbin***@yahoo.com, hongbin_***@hotmail.com. The associated phone number is 510-651-3298, along with 4 other potential numbers in the area codes corresponding to 520, 408, 208. For a comprehensive view, you can access contact details, phone numbers, addresses, emails, social media profiles, arrest records, photos, videos, public records, business records, resumes, CVs, work history, and related names to ensure you have all the information you need.
Last updated Dec 28, 2023
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Hongbin Zhu , Age 56
Blaine, WA
Also known as:
Hangbin Zhu
Has lived in:
Blaine, WA
Miracle, KY
Chesterfield, MO
Lovettsville, VA
Related to:
Cynthia Cheng, 24
Haowei Hu
Yuanyuan Hu, 54
Wen Xing, 51
PhoneAddress
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Hongbin Zhu , Age 50
Boise, ID
Also known as:
Hong B Zhu
Zhu Hongbin
Has lived in:
Boise, ID
Saint Louis, MO
San Antonio, TX
Rockford, IL
Related to:
Lin Zhu, 49
Phone number:
208-871-****
PhoneAddress
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Hongbin I Zhu , Age 46
Plymouth, MN
Has lived in:
Plymouth, MN
Centereach, NY
Coram, NY
Port Jefferson, NY
Related to:
Zhao Lin, 49
Fu Zhao, 61
Felix Zhu
Hui Zhu, 37
PhoneAddress
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Hongbin Zhu , Age 22
Brooklyn, NY
Has lived in:
Brooklyn, NY
Related to:
Yong Chen, 49
Guang Zhu, 61
Xiuqin Zhu
Yifung Chu
PhoneAddress
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Hongbin Zhu , Age 36
Chino Hills, CA
Has lived in:
Chino Hills, CA
West Covina, CA
Rowland Heights, CA
Diamond Bar, CA
Related to:
Hongbin Zhu
PhoneAddress
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Hongbin Zhu , Age 44
Columbus, OH
Has lived in:
Columbus, OH
PhoneAddress
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Hong B Zhu , Age 65
Brooklyn, NY
Also known as:
Hongbin Zhu
Hong Binzhu
Has lived in:
Brooklyn, NY
Easton, PA
Northampton, PA
Related to:
Ru Zhu, 69
Annie Zhu
Bin Zhu
John Ligreci, 85
PhoneAddress
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Hongbin Zhu 
East Setauket, NY
Also known as:
Hong Zhu
Has lived in:
East Setauket, NY
Setauket, NY
Related to:
Hanlong Lu
Yomg Lu
Lu Yu
Hong Zhu
PhoneAddress
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Hongbin Zhu 
Chino Hills, CA
Has lived in:
Chino Hills, CA
West Covina, CA
Related to:
Hongbin Zhu, 36
PhoneAddress
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Hongbin Zhu 
Elk Grove, CA
Has lived in:
Elk Grove, CA
PhoneAddress
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Public information about Hongbin Zhu

Resumes

Resumes

Hongbin Zhu

Hongbin Zhu Photo 1

Hongbin Zhu

Hongbin Zhu Photo 2

Staff Fellow

Hongbin Zhu Photo 3
Location:
Denver, CO
Industry:
Government Administration
Work:
Thermo Fisher Scientific Sep 2017 - Jan 2019
R and D Scientist Iii Fda Sep 2017 - Jan 2019
Staff Fellow Fda Feb 2015 - Aug 2017
Orise Fellow Kk Wonmen’s & Children’s Hospital Nanyang Technological University Dec 2013 - Jan 2015
Research Associate
Education:
University of Chinese Academy of Sciences 2010 - 2013
Doctorates, Doctor of Philosophy, Philosophy, Chemistry Hunan University 2007 - 2010
Masters, Chemistry
Skills:
Mass Spectrometry, Pharmaceutical Research, Hplc Ms, Proteomics, Hplc, Research, Data Analysis, Analytical Chemistry, Western Blotting, Lc Ms, Protein Chemistry, Biochemistry, Lc Ms/Ms, Glycosylation, Orbitrap Fusion Ms, Q Exactive Ms, Protein Therapeutics, Pharmaceutical Analysis, Characterization, Chemistry, Spectroscopy, Molecular Biology, Science, Pharmaceutical Industry, High Performance Liquid Chromatography, Glycoproteomics, Q Tof Ms, Quality Control, Protein Assays, Strategic Planning, Ftir, Liquid Chromatography Mass Spectrometry, Maldi Tof Ms, Ft Icr Ms, Enzyme Linked Immunosorbent Assay, Government, Program Management, Principal Component Analysis, Hierarchical Cluster Analysis, Ft Ir
Languages:
English

Hongbin Zhu - Plymouth, MI

Hongbin Zhu Photo 4
Work:
Intrinsic Medical Imaging Sep 2011 to 2000
Computer Imaging Scientist Dept. of Radiology, State University of New York at Stony Brook - Stony Brook, NY Jul 2007 to Sep 2011
Postdoctoral Research Assistant Professor
Education:
Institute of Software, Chinese Academy of Sciences 2003 to 2007
PhD in Computer Science Huazhong University of Science and Technology - Wuhan, China Jan 2000 to Jan 2003
MS in Materials Science and Engineering Huazhong University of Science and Technology - Wuhan, China Jan 1996 to Jan 2000
BS in Materials Science and Engineering
Skills:
Image segmentation/registration/clas... Computer Graphics. Computational Geometry. Computational Fluid Dynamics. Software engineering. C/C++/STL/OpenGL/Boost/ITK/Ope... Visual C++/Intel Compiler/CMake.

Hongbin Zhu - Diamond Bar, CA

Hongbin Zhu Photo 5
Work:
Topper Trading Company - Cincinnati, OH Jan 2012 to Aug 2012
Self-employed, Manager University of Cincinnati MBA Association - Cincinnati, OH Oct 2010 to Dec 2011
Vice President of Finance Ball State University Foundation Fund - Muncie, IN Jan 2010 to May 2010
Equity Research Analyst Industrial and Commercial Bank of China, China Jun 2009 to Aug 2009
Credit Analyst Intern
Education:
University of Cincinnati - Cincinnati, OH Sep 2010 to Dec 2011
Master of Business Administration in Finance Ball State University - Muncie, IN Sep 2007 to May 2010
Bachelor of Science in Finance Wuhan University of Technology Sep 2005 to Jun 2009
Bachelor of Science in International Business and Trade
Skills:
Financial Modeling, Portfolio Management, Financial analysis, Valuation, Equity Research, Excel, Mandrian, English

Principle Process Integration Engineer

Hongbin Zhu Photo 6
Location:
Boise, ID
Industry:
Semiconductors
Work:
Micron Technology since 2006
Senior process integration engineer Micron Technology 2006 - 2011
Process Engr
Education:
University of Arizona 1999 - 2005
ph D, Chemical Engineer Qingdao University of Science and Technology 1990 - 1994
BS, Chemical Engineer
Skills:
Jmp, Process Integration, Ic, Yield, Silicon, Semiconductors, Design of Experiments, Cvd, Thin Films, Dram, Characterization, Pvd, Spc, Cmos, Photolithography, Atomic Layer Deposition, Etching, Device Characterization, Pecvd, Flash Memory, Semiconductor Industry, Failure Analysis, Metrology

Corporate Accounting Supervisor

Hongbin Zhu Photo 7
Location:
Los Angeles, CA
Industry:
Warehousing
Work:
Topper Trading Company since Sep 2011
Self Employed MBA Association, University of Cincinnati Oct 2010 - Dec 2011
Vice President of Finance University of Cincinnati Sep 2010 - Dec 2011
Student cardinal communication, Ball State University Jan 2010 - May 2010
Financial Advisor Ball State University Jan 2010 - May 2010
Equity Investment Analyst (Academic Project) Industrial and Commercial Bank of China Jun 2009 - Aug 2009
Credit Analyst
Education:
University of Cincinnati 2010 - 2011
Master of Business Administration, Finance Ball State University 2007 - 2010
Bachelor of Science, Finance Wuhan University of Technology 2005 - 2009
Bachelor of Science, International Business; Trade
Skills:
Financial Analysis, Financial Modeling, Investments, Analysis, Statistics, Portfolio Management, Valuation, Excel, Mandarin, Equities, Equity Research, Financial Accounting, Financial Management, Business Valuation, Credit, Credit Risk, Data Analysis, Sql, Mas500, Crystal Reports, Budgeting, Financial Variance Analysis, Microsoft Word, Microsoft Powerpoint, Microsoft Office, Teamwork, Leadership, Management, Customer Service, Financial Reporting, Business Analysis, Forecasting, Finance, Big Data, Account Reconciliation, Sales Tax, Problem Solving, Depreciation, Account Receivable, Accounts Payable and Receivable, Budget Monitoring, Cost Allocation, Variance Analysis, Expense Analysis, Bookkeeping, Macro
Languages:
Mandarin
English
Certifications:
Cfa Level 2 Candidate
Sql Tips, Tricks, & Techniques
Cfa Institute

Senior Software Engineer

Hongbin Zhu Photo 8
Location:
Hopkins, MN
Industry:
Medical Devices
Work:
IMRIS - Minnetonka, MN since Jul 2013
Senior Software Engineer Intrinsic Medical Imaging - Bloomfield Hills, MI Sep 2011 - Jul 2013
Computer Imaging Scientist SUNY@Stony Brook - Stony Brook, NY Jul 2007 - Sep 2011
Research Assistant Professor Chinese Academy of Sciences - Beijing City, China Sep 2003 - Jul 2007
PhD. Computer Graphics. Allfast Tech. Inc. - Wuhan, Hubei, China. 2000 - 2001
Software Engineer Intern
Education:
Institute of Software, Chinese Academy of Sciences 2003 - 2007
PhD, Computer Graphics Huazhong University of Science and Technology 2000 - 2003
M.Sc, Materials Science and Engineering, Huazhong University of Science and Technology 1996 - 2000
B.Sc, Materials Science and Engineering,
Skills:
Image Processing, C++, Pattern Recognition, Medical Imaging, Image Segmentation, Programming, Image Registration, Algorithms, Testing, Object Detection, Image Analysis, C, Machine Learning, Software Engineering, Signal Processing, Matlab, High Performance Computing, C#, Computer Graphics, Gpu
Interests:
Image Segmentation
Registration
Image Analysis/Processing
Computer Graphics
Machine Learning
Et Al
Classification
Triangle Mesh Processing/Rendering
Feature Extraction/Detection
Languages:
English
Awards:
President Outstanding Award
Chinese Academy of Sciences
Background search with BeenVerified
Data provided by Veripages

Phones & Addresses

Name
Addresses
Phones
Hongbin Zhu
3660 3Rd St, Tucson, AZ 85716
520-325-8938
Hongbin Zhu
726 9Th St, Tucson, AZ 85719
Hongbin Zhu
433 Buena Vista Ave, Alameda, CA 94501
Hongbin Zhu
5511 Curtis St, Fremont, CA 94538
510-651-3298
Hongbin Zhu
760 7Th St, San Jose, CA 95112

Publications

Us Patents

Methods Of Forming A Photoresist-Comprising Pattern On A Substrate

US Patent:
8409457, Apr 2, 2013
Filed:
Aug 29, 2008
Appl. No.:
12/201744
Inventors:
Zishu Zhang - Boise ID, US
Hongbin Zhu - Boise ID, US
Anton deVilliers - Boise ID, US
Alex Schrinsky - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
C03C 15/00
US Classification:
216 41, 216 37, 430315, 430322, 430324, 438725, 438736, 438737
Abstract:
A method of forming a photoresist-comprising pattern on a substrate includes forming a patterned first photoresist having spaced first masking shields in at least one cross section over a substrate. The first masking shields are exposed to a fluorine-containing plasma effective to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the first masking shields. A second photoresist is deposited over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating. The second photoresist which is in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating is exposed to a pattern of actinic energy and thereafter spaced second masking shields are formed in the one cross section which comprise the second photoresist and correspond to the actinic energy pattern. The first and second masking shields together form at least a part of a photoresist-comprising pattern on the substrate. Other embodiments are disclosed.

Method For Selectively Modifying Spacing Between Pitch Multiplied Structures

US Patent:
8507384, Aug 13, 2013
Filed:
Sep 21, 2011
Appl. No.:
13/238192
Inventors:
Hongbin Zhu - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/311
US Classification:
438696, 438694, 438700
Abstract:
Methods for circuit material processing are provided. In at least one such method, a substrate is provided with a plurality of overlying spacers. The spacers have substantially straight inner sidewalls and curved outer sidewalls. An augmentation material is formed on the plurality of spacers such that the inner or the outer sidewalls of the spacers are selectively expanded. The augmentation material can bridge the upper portions of pairs of neighboring inner sidewalls to limit deposition between the inner sidewalls. The augmentation material is selectively etched to form a pattern of augmented spacers having a desired augmentation of the inner or outer sidewalls. The pattern of augmented spacers can then be transferred to the substrate through a series of selective etches such that features formed in the substrate achieve a desired pitch.

Methods Of Forming Nand Cell Units With String Gates Of Various Widths

US Patent:
7476588, Jan 13, 2009
Filed:
Jan 12, 2007
Appl. No.:
11/652903
Inventors:
David J. Keller - Boise ID, US
Hongbin Zhu - Boise ID, US
Alex J. Schrinsky - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/336
H01L 21/311
H01L 21/302
US Classification:
438258, 438264, 438266, 438700, 438739, 257E293
Abstract:
Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and Oto extend a pattern through a carbon-containing layer. The patterned carbon-containing layer may be used to pattern NAND cell unit gates. Some embodiments include structures having a patterned carbon-containing layer defining a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate.

Method Of Synthesizing Cubic Boron Nitride Films

US Patent:
6153061, Nov 28, 2000
Filed:
Feb 25, 1999
Appl. No.:
9/257572
Inventors:
Yonhua Tzeng - Auburn AL
Hongbin Zhu - Fremont CA
Assignee:
Auburn University - Auburn AL
International Classification:
C23C 1434
US Classification:
20419216
Abstract:
A method of forming cubic phase boron nitride films in which a hexagonal boron nitride film target is positioned in front of an RF magnetron sputtering gun and is impacted with ions to cause atoms of boron and nitrogen to be sputtered away from the target and toward a substrate. At the same time, electrons are emitted into the system by an electron emitter, which electrons are attracted to the substrate as the boron and nitrogen atoms are being deposited on the substrate. The electrons cause the boron and nitrogen atoms to be reformed on the substrate as cubic phase boron nitride while suppressing the formation of other, less desirable forms of boron nitride films.

Three Dimensional Memory

US Patent:
2014016, Jun 19, 2014
Filed:
Dec 17, 2012
Appl. No.:
13/716287
Inventors:
Zhenyu Lu - Boise ID, US
Hongbin Zhu - Boise ID, US
Gordon A. Haller - Boise ID, US
Roger W. Lindsay - Boise ID, US
Andrew Bicksler - Boise ID, US
Brian J. Cleereman - Boise ID, US
Minsoo Lee - Boise ID, US
International Classification:
H01L 29/788
H01L 29/792
H01L 29/66
US Classification:
257316, 438257, 257324, 438287
Abstract:
A method to fabricate a three dimensional memory structure may include creating a stack of layers including a conductive source layer, a first insulating layer, a select gate source layer, and a second insulating layer, and an array stack. A hole through the stack of layers may then be created using the conductive source layer as a stop-etch layer. The source material may have an etch rate no faster than 33% as fast as an etch rate of the insulating material for the etch process used to create the hole. A pillar of semiconductor material may then fill the hole, so that the pillar of semiconductor material is in electrical contact with the conductive source layer.

Semiconductor Constructions Having Multiple Patterned Masking Layers Over Nand Gate Stacks

US Patent:
7898019, Mar 1, 2011
Filed:
Dec 9, 2008
Appl. No.:
12/331059
Inventors:
David J. Keller - Boise ID, US
Hongbin Zhu - Boise ID, US
Alex J. Schrinsky - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 29/788
US Classification:
257321, 257E21409
Abstract:
Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate. Some embodiments include utilization of an etch comprising HBr and Oto extend a pattern through a carbon-containing layer. The patterned carbon-containing layer may be used to pattern NAND cell unit gates. Some embodiments include structures having a patterned carbon-containing layer defining a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select gate.

Methods And Apparatuses Having Memory Cells Including A Monolithic Semiconductor Channel

US Patent:
2015012, May 7, 2015
Filed:
Nov 1, 2013
Appl. No.:
14/069574
Inventors:
- Boise ID, US
Zhenyu Lu - Boise ID, US
Roger W. Lindsay - Boise ID, US
Brian Cleereman - Boise ID, US
John Hopkins - Boise ID, US
Hongbin Zhu - Boise ID, US
Fatma Arzum Simsek-Ege - Boise ID, US
Prasanna Srinivasan - Boise ID, US
Purnima Narayanan - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 27/115
US Classification:
257321, 438258
Abstract:
Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.

Memory Arrays

US Patent:
2015033, Nov 19, 2015
Filed:
May 19, 2014
Appl. No.:
14/281569
Inventors:
- Boise ID, US
Yushi Hu - Boise ID, US
Rita J. Klein - Boise ID, US
John D. Hopkins - Boise ID, US
Hongbin Zhu - Boise ID, US
Gordon A. Haller - Boise ID, US
Luan C. Tran - Meridian ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 29/49
H01L 21/28
H01L 27/115
Abstract:
Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.

FAQ: Learn more about Hongbin Zhu

How old is Hongbin Zhu?

Hongbin Zhu is 56 years old.

What is Hongbin Zhu date of birth?

Hongbin Zhu was born on 1967.

What is Hongbin Zhu's email?

Hongbin Zhu has such email addresses: hongbin***@yahoo.com, hongbin_***@hotmail.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is Hongbin Zhu's telephone number?

Hongbin Zhu's known telephone numbers are: 510-651-3298, 520-325-8938, 408-564-0197, 208-871-8599. However, these numbers are subject to change and privacy restrictions.

How is Hongbin Zhu also known?

Hongbin Zhu is also known as: Hangbin Zhu. This name can be alias, nickname, or other name they have used.

Who is Hongbin Zhu related to?

Known relatives of Hongbin Zhu are: Wanshan Zhu, Xiaolin Zhu, Cynthia Cheng, Haowei Hu, Yuanyuan Hu, Wen Xing, Jing Xheng. This information is based on available public records.

What are Hongbin Zhu's alternative names?

Known alternative names for Hongbin Zhu are: Wanshan Zhu, Xiaolin Zhu, Cynthia Cheng, Haowei Hu, Yuanyuan Hu, Wen Xing, Jing Xheng. These can be aliases, maiden names, or nicknames.

What is Hongbin Zhu's current residential address?

Hongbin Zhu's current known residential address is: 1200 Matterhorn Dr, San Jose, CA 95132. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Hongbin Zhu?

Previous addresses associated with Hongbin Zhu include: 5778 E Millet Dr, Boise, ID 83716; 16430 42Nd Ave N, Minneapolis, MN 55446; 433 Buena Vista Ave, Alameda, CA 94501; 5511 Curtis, Fremont, CA 94538; 760 7Th St, San Jose, CA 95112. Remember that this information might not be complete or up-to-date.

Where does Hongbin Zhu live?

Blaine, WA is the place where Hongbin Zhu currently lives.

Possible Relatives

Cynthia Zhu David Zhu Dawei Zhu De Zhu Dai Zhu Daming Zhu Dan Zhu Hongbin Li Hongbin Liu Hongbin Wang

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