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Ali Salih

In the United States, there are 48 individuals named Ali Salih spread across 29 states, with the largest populations residing in New York, California, Texas. These Ali Salih range in age from 22 to 90 years old. Some potential relatives include Radieh Alsafi, Razaq Aldhalimi, Saleh Shuhait. You can reach Ali Salih through various email addresses, including derek.wea***@bellsouth.net, bbluede***@go2netmail.com. The associated phone number is 330-389-1012, along with 6 other potential numbers in the area codes corresponding to 703, 619, 858. For a comprehensive view, you can access contact details, phone numbers, addresses, emails, social media profiles, arrest records, photos, videos, public records, business records, resumes, CVs, work history, and related names to ensure you have all the information you need.

Public information about Ali Salih

Phones & Addresses

Publications

Us Patents

Multi-Channel Esd Device And Method Therefor

US Patent:
7579632, Aug 25, 2009
Filed:
Sep 21, 2007
Appl. No.:
11/859624
Inventors:
Ali Salih - Mesa AZ, US
Mingjiao Liu - Gilbert AZ, US
Sudhama C. Shastri - Phoenix AZ, US
Thomas Keena - Chandler AZ, US
Gordon M. Grivna - Mesa AZ, US
Francine Y. Robb - Fountain Hills AZ, US
Ki Chang - Kansas City MO, US
Assignee:
Semiconductor Components Industries, L.L.C. - Phoenix AZ
International Classification:
H01L 23/62
US Classification:
257173, 257355, 257E29014, 257E29335, 438983
Abstract:
In one embodiment, an ESD device is configured to include a zener diode and a P-N diode.

Two Terminal Low Capacitance Multi-Channel Esd Device

US Patent:
7812367, Oct 12, 2010
Filed:
Oct 15, 2008
Appl. No.:
12/251978
Inventors:
Ali Salih - Mesa AZ, US
Mingjiao Liu - Gilbert AZ, US
Thomas Keena - Chandler AZ, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 29/40
H01L 29/74
H01L 31/111
H01L 29/30
H01L 29/866
H01L 29/88
H01L 29/32
H01L 29/36
H01L 29/72
H01L 29/73
H01L 23/58
US Classification:
257111, 257106, 257107, 257109, 257173, 257174, 257594, 257E21355, 257E21356, 257E2902, 257E29335
Abstract:
In one embodiment, a two terminal multi-channel ESD device is configured to include a zener diode and a plurality of P-N diodes.

Semiconductor Device With An Undulating Base Region And Method Therefor

US Patent:
6344379, Feb 5, 2002
Filed:
Oct 22, 1999
Appl. No.:
09/426108
Inventors:
Prasad Venkatraman - Gilbert AZ
Ali Salih - Tempe AZ
Assignee:
Semiconductor Components Industries LLC - Phoenix AZ
International Classification:
H01L 21337
US Classification:
438192, 438193, 438195, 438197, 438212, 438268, 438270, 438271, 438284, 257263, 257266, 257270, 257339, 257341, 257342
Abstract:
A transistor ( ) uses a single continuous base region ( ) with an undulating structure. The semiconductor device is an insulated gate field effect transistor having a semiconductor substrate with a plurality of doped base branches, which extend into the semiconductor substrate, form into a single base region for the entire transistor. Each of the plurality of base branches ( ) is undulating and of substantially constant width, and each of the base branches undulates in-phase with the immediately adjacent base branches. A continuous gate layer ( ) overlies the semiconductor substrate and is self-aligned to the plurality of base branches. The undulating structure of the base region improves channel density, and thus lowers on-resistance, and the use of a single base region ensures that all portions of the base region throughout the device will be at a substantially constant electric potential.

Low Clamp Voltage Esd Device And Method Therefor

US Patent:
7842969, Nov 30, 2010
Filed:
Jul 10, 2008
Appl. No.:
12/170630
Inventors:
David D. Marreiro - Phoenix AZ, US
Sudhama C. Shastri - Phoenix AZ, US
Ali Salih - Mesa AZ, US
Mingjiao Liu - Gilbert AZ, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 23/60
US Classification:
257173, 257E27018
Abstract:
In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.

Method Of Forming An Integrated Semiconductor Device And Structure Therefor

US Patent:
7955941, Jun 7, 2011
Filed:
Sep 11, 2008
Appl. No.:
12/208537
Inventors:
Steven M. Etter - Phoenix AZ, US
Mingjiao Liu - Gilbert AZ, US
Ali Salih - Mesa AZ, US
David D. Marreiro - Phoenix AZ, US
Sudhama C. Shastri - Phoenix AZ, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 21/8222
H03K 5/00
US Classification:
438380, 257603, 257E21608, 327552
Abstract:
In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance.

Semiconductor Device And Method

US Patent:
6420756, Jul 16, 2002
Filed:
Mar 12, 2001
Appl. No.:
09/802402
Inventors:
Ali Salih - Mesa AZ
Assignee:
Semiconductor Components Industries LLC - Phoenix AZ
International Classification:
H01L 2972
US Classification:
257330, 257332, 257333, 257389, 257401, 257406, 257411, 257412, 438242, 438245, 438388, 438638, 438666
Abstract:
A semiconductor device ( ) has a substrate ( ) with a surface ( ) for defining a trench ( ). A control electrode ( ) is disposed at the surface to activate a conduction path ( ) along a sidewall ( ) of the trench with a control signal (V ). A dielectric layer ( ) is formed between the sidewall and the control electrode to have a first width (W ) adjacent to the surface and a second width (W ) smaller than the first width adjacent to the conduction path.

Method Of Forming A Bi-Directional Diode And Structure Therefor

US Patent:
8003478, Aug 23, 2011
Filed:
Jun 6, 2008
Appl. No.:
12/134401
Inventors:
Mark Duskin - Scottsdale AZ, US
Suem Ping Loo - Tolleson AZ, US
Ali Salih - Mesa AZ, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 21/20
US Classification:
438380, 438 91, 438237, 438328, 438983, 257E21356, 257E29335
Abstract:
In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

Method Of Forming Low Capacitance Esd Device And Structure Therefor

US Patent:
8039359, Oct 18, 2011
Filed:
Feb 27, 2009
Appl. No.:
12/395076
Inventors:
Thomas Keena - Chandler AZ, US
Ki Chang - Kansas City MO, US
Francine Y. Robb - Fountain Hills AZ, US
Mingjiao Liu - Gilbert AZ, US
Ali Salih - Mesa AZ, US
George Chang - Tempe AZ, US
Assignee:
Semiconductor Components Industries, LLC - Phoenix AZ
International Classification:
H01L 21/76
H01L 23/62
US Classification:
438430, 438 22, 438 47, 438296, 438297, 438424, 257 51, 257106, 257199, 257461, 257509, 257603, 257929, 257E21644
Abstract:
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.

FAQ: Learn more about Ali Salih

What is Ali Salih date of birth?

Ali Salih was born on 1986.

What is Ali Salih's email?

Ali Salih has such email addresses: derek.wea***@bellsouth.net, bbluede***@go2netmail.com. Note that the accuracy of these emails may vary and they are subject to privacy laws and restrictions.

What is Ali Salih's telephone number?

Ali Salih's known telephone numbers are: 330-389-1012, 703-502-0771, 619-280-2692, 619-563-5489, 858-565-8416, 480-598-3199. However, these numbers are subject to change and privacy restrictions.

How is Ali Salih also known?

Ali Salih is also known as: Ali S Salih, Ali S Alih, Salih Ali. These names can be aliases, nicknames, or other names they have used.

Who is Ali Salih related to?

Known relatives of Ali Salih are: Fayrouz Shoucair, Ratib Almosawi, Saleh Shuhait, Razaq Aldhalimi, Radieh Alsafi. This information is based on available public records.

What are Ali Salih's alternative names?

Known alternative names for Ali Salih are: Fayrouz Shoucair, Ratib Almosawi, Saleh Shuhait, Razaq Aldhalimi, Radieh Alsafi. These can be aliases, maiden names, or nicknames.

What is Ali Salih's current residential address?

Ali Salih's current known residential address is: 2396 Homestead Ter S, Palm Harbor, FL 34683. Please note this is subject to privacy laws and may not be current.

What are the previous addresses of Ali Salih?

Previous addresses associated with Ali Salih include: 12665 Marcum Ct, Fairfax, VA 22033; 2740 Wilson Ct, Palm Harbor, FL 34684; 4005 E Pocahontas Ave, Tampa, FL 33610; 746 9Th Ave Apt 1Rn, New York, NY 10019; 28539 John Hauk St, Garden City, MI 48135. Remember that this information might not be complete or up-to-date.

Where does Ali Salih live?

Palm Harbor, FL is the place where Ali Salih currently lives.

How old is Ali Salih?

Ali Salih is 37 years old.

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